1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update the boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 10-03-25 Thomas M. Hess REV SHET REV A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8
2、9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Th
3、omas M. Hess MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SCHMITT 16-BIT BIDIRECTIONAL MULTI-PURPOSE LOW VOLTAGE TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 03-03-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-02543 SHEET 1 OF 23 DSCC FORM 22
4、33 APR 97 5962-E184-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr
5、awing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiatio
6、n Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 02543 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3
7、) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropr
8、iate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS162245S Radiation hardened, Schmitt 16-bit bidirectional multi-purpose low voltage transceiver with three
9、-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircui
10、ts in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 48 Flat pack 1.2.5 Lead fi
11、nish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER C
12、OLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage ranges (VDD1) . -0.3 V dc to +4.0 V dc Supply voltage ranges (VDD2) . -0.3 V dc to +4.0 V dc DC voltage range, any pin (VI/O) -0.3 V dc to VDD1+ 0.3 V dc 4/ DC input
13、 current, any one input (IIN). 10 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . 20C/W Junction temperature (TJ) +150C 5/ Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/
14、 Supply voltage range (VDD1) . +2.3 V dc to +3.6 V dc Supply voltage range (VDD2) . +2.3 V dc to +3.6 V dc Input voltage range (VIN) 0.0 V dc to VDD1Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 6/ Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) . 1 x
15、106Rads (Si) Single event phenomenon (SEP) effective: No upsets at linear energy threshold (LET): (see 4.4.4.2) 123 MeV/(mg/cm2) No latch-up occur at LET: (see 4.4.4.2) 113 MeV/(mg/cm2) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, stand
16、ards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for
17、. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of t
18、hese documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at
19、 the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C. 4/ For cold spare mode (VDD1=
20、 VSS, VDD2= VSS), VI/Omay be -0.3 V to the maximum recommended operating VDD1+ 0.3 V. 5/ Maximum junction temperature may be increased to +175C during burn-in and life test. 6/ Radiation testing is performed on the standard evaluation circuit. Provided by IHSNot for ResaleNo reproduction or networki
21、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references ci
22、ted herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordanc
23、e with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-P
24、RF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein fo
25、r device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The l
26、ogic diagram shall be as specified on figure 4. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 5. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision l
27、evel control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as sp
28、ecified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked
29、with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the
30、 RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QM
31、L“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to
32、the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as
33、an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of
34、conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of p
35、roduct (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applic
36、able required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided
37、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symb
38、ol Test conditions 1/ 2/ -55C TC +125C +2.3 V VDD1, VDD2 +3.6 V unless otherwise specified Devicetype Group A subgroups Limits 3/ Unit Min Max Schmitt trigger, positive going threshold VT+VDD= 2.3 V and 3.6 V 01 1, 2, 3 0.7VDDV M, D, P, L, R, F, G, H 4/ 1 0.7VDDSchmitt trigger, negative going thresh
39、old VT-VDD= 2.3 V and 3.6 V 01 1, 2, 3 0.3VDDV M, D, P, L, R, F, G, H 4/ 1 0.3VDDSchmitt trigger, range of hysteresis 5/ VH1VDD= 3.0 V and 3.6 V 01 1, 2, 3 0.5 V M, D, P, L, R, F, G, H 4/ 1 0.5VH2VDD= 2.3 V and 2.7 V 1, 2, 3 0.4 M, D, P, L, R, F, G, H 4/ 1 0.4Low level output voltage 5/ VOL1VDD= 3.0
40、 V, IOL= +8 mA 01 1, 2, 3 0.4 V M, D, P, L, R, F, G, H 4/ 1 0.4VDD= 3.0 V, IOL= +100 A 1, 2, 3 0.2 M, D, P, L, R, F, G, H 4/ 1 0.2VOL2VDD= 2.3 V, IOL= +8 mA 1, 2, 3 0.4 M, D, P, L, R, F, G, H 4/ 1 0.4VDD= 2.3 V, IOL= +100 A 1, 2, 3 0.2 M, D, P, L, R, F, G, H 4/ 1 0.2High level output voltage 5/ VOH1
41、VDD= 3.0 V, IOH= -8 mA 01 1, 2, 3 VDD- 0.7 V M, D, P, L, R, F, G, H 4/ 1 VDD- 0.7 VDD= 3.0 V, IOH= -100 A 1, 2, 3 VDD - 0.2 M, D, P, L, R, F, G, H 4/ 1 VDD- 0.2 VOH2VDD= 2.3 V, IOH= -8 mA 1, 2, 3 VDD- 0.7 M, D, P, L, R, F, G, H 4/ 1 VDD- 0.7 VDD= 2.3 V, IOH= -100 A 1, 2, 3 VDD - 0.2 M, D, P, L, R, F
42、, G, H 4/ 1 VDD- 0.2 Input leakage current 5/ IINVDD= 2.7 V and 3.6 V VIN= VDDor VSS01 1, 2, 3 -1.0 3.0 A M, D, P, L, R, F, G, H 4/ 1 -1.0 3.0 Three-state output leakage current 5/ IOZVDD= 2.7 V and 3.6 V VIN= VDDor VSS01 1, 2, 3 -1.0 3.0 A M, D, P, L, R, F, G, H 4/ 1 -1.0 3.0 See footnotes at end o
43、f table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characte
44、ristics - Continued. Test Symbol Test conditions 1/ 2/ -55C TC +125C +2.3 V VDD1, VDD2 +3.6 V unless otherwise specified Devicetype Group A subgroups Limits 3/ Unit Min Max Cold sparing input leakage current 6/ 7/ ICSVDD= VSSVIN= 3.6 V 01 1, 2, 3 -5.0 5.0 A M, D, P, L, R, F, G, H 4/ 1 -5.0 5.0 Warm
45、sparing input leakage current 7/ IWSVDD1= 0.0 V, VDD2= VDDor VDD1= VDD, VDD2= 0.0 V VIN= VSSor VDD01 1, 2, 3 -5.0 5.0 A M, D, P, L, R, F, G, H 4/ 1 -5.0 5.0 Short-circuit output current 8/ 9/ IOS1VDD= 3.0 V and 3.6 V VO= VDDor VSS01 1, 2, 3 -200 200 mA M, D, P, L, R, F, G, H 4/ 1 -200 200 IOS2VDD= 2
46、.3 V and 2.7 V VO= VDDor VSS1, 2, 3 -100 100 M, D, P, L, R, F, G, H 4/ 1 -100 100 Standby supply current, VDD1or VDD2 IDDVDD= 3.6 V VIN= VDDor VSSOE = VDD 01 1, 2, 3 475 A M, D, P, L, R, F, G, H 4/ 1 15 mA Power dissipation 10/ 11/ 12/ Ptotal1VDD= 3.0 V and 3.6 V CL= 40 pF01 1, 2, 3 6.2 mW/MHz M, D,
47、 P, L, R, F, G, H 4/ 1 6.2 Ptotal2VDD= 2.3 V and 2.7 V CL= 40 pF1, 2, 3 3.0 M, D, P, L, R, F, G, H 4/ 1 3.0 Power-on reset offset voltage 10/ POROFF VIN= VDDor VSS01 1, 2, 3 250 mV M, D, P, L, R, F, G, H 4/ 1 250VDD1and VDD2rise time 10/ 13/ 14/ PORRISE VDDfrom 0.0 V to 2.3 V 01 1, 2, 3 500 mS M, D,
48、 P, L, R, F, G, H 4/ 1 500Input capacitance CINVDD= 2.3 V and 3.6 V f = 1 MHz See 4.4.1c01 4 15 pF Output capacitance COUTVDD= 2.3 V and 3.6 V f = 1 MHz See 4.4.1c01 4 15 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02543 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ 2/ -
