1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHET REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THI
2、S DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, LINE DRIVER, QUAD AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 05-12-08 DIFFERENTIAL, BUS LVDS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-06201 SHEET 1 O
3、F 12 DSCC FORM 2233 APR 97 5962-E120-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1
4、 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a cho
5、ice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 06201 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.
6、2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked
7、 with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 UT54LVDM031LV Quad differential line driver, LVDS 1.2.3 Device class designator. The device class
8、 designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certifi
9、cation and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q
10、and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR
11、97 1.3 Absolute maximum ratings. 1/ Supply voltage (VDD) . -0.3 V dc to 4.0 V dc Voltage on any pin during operation -0.3 V dc to (VDD+ 0.3 V) Voltage on any pin during cold spare -0.3 V dc to 4.0 V dc Storage temperature . -65C to +150C Power dissipation (PD) 1.25 W Junction temperature (TJ) 2/ +15
12、0C Thermal resistance, junction-to-case (JC) 10C/W Input current (II). 10 mA 1.4 Recommended operating conditions. Supply voltage (VDD) . 3.0 V dc to 3.6 V dc Input voltage (VIN) . 0 V dc to VDDOperating case temperature range (TC) -55C to +125C 1.5 Radiation features. Maximum total dose available (
13、dose rate = 50 300 rads(Si)/s) 300 Krad(Si) Single event latchup 100 Mev-cm2/mg 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified
14、, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interfa
15、ce Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil
16、 or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document,
17、however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum junction te
18、mperature may be increased to +175C during burn-in and life test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FOR
19、M 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect
20、 the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physi
21、cal dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spec
22、ified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirrad
23、iation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements s
24、hall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not f
25、easible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be i
26、n accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of
27、 compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be
28、listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-3
29、8535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of
30、microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for d
31、evice class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for
32、device class M. Device class M devices covered by this drawing shall be in microcircuit group number 77 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CE
33、NTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/, 2/ -55C TC +125C VDD= 3.3 V 0.3 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max High-level input voltage VIH
34、1, 2, 3 01 2.0 VDDV Low-level input voltage VIL1, 2, 3 01 VSS0.8 V Low-level output voltage VOLRL= 35 1, 2, 3 01 0.855 V High-level output voltage VOHRL= 35 1, 2, 3 01 1.750 V Input leakage current IINVIN= VDDor GND, VDD= 3.6V 1, 2, 3 01 -10 +10 A Cold spare leakage current ICSVIN= 3.6 V, VDD= VSS1,
35、 2, 3 01 -20 +20 A Differential output voltage VODRL= 35 2/ 1, 2, 3 01 250 400 mV Change in magnitude of VODfor complementary output states VODRL= 35 2/ 1, 2, 3 01 35 mV Offset voltage VOSRL= 35, (VOS= VOH+ VOL) 2 1, 2, 3 01 1.055 1.550 V Change in magnitude of VOSfor complementary output states VOS
36、RL= 35 1, 2, 3 01 35 mV Input clamp voltage 3/ VCLICL= +18 mA 1, 2, 3 01 -1.5 V Output short circuit current 3/, 4/ IOSVIN= VDD, VOUT+ = 0 V or VIN= GND, VOUT- = 0 V 1, 2, 3 01 4.5 mA Output three-state current 3/ IOZEN = 0.8 V, EN = 2.0 V, VOUT= 0 V or VDD, VDD= 3.6 V 1, 2, 3 01 -10 +10 A Loaded su
37、pply current, drivers enabled 3/ ICCLRL= 35 all channels, VIN= VDDor VSS(all inputs) 1, 2, 3 01 60.0 mA Loaded supply current, drivers disabled 3/ ICCZDIN= VDDor VSS, EN = VSS, EN = VDD1, 2, 3 01 6.0 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitt
38、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TC +125C VDD= 3.3 V 0.3 V
39、Group A subgroups Device type Limits Unit unless otherwise specified Min Max Differential propagation delay, high to low tPHLD5/, 6/, 7/, See figure 2 9, 10, 11 01 0.5 1.8 ns Differential propagation delay, low to high tPLHD5/, 6/, 7/, See figure 2 9, 10, 11 01 0.5 1.8 ns Differential skew (tPHLD -
40、tPLHD) tSKD5/, 6/, See figure 2 9, 10, 11 01 0 0.4 ns Channel-to-channel skew tSK15/, 6/, 8/, See figure 2 9, 10, 11 01 0 0.5 ns Chip-to-chip skew tSK2 5/, 6/, 9/, See figure 2 9, 10, 11 01 1.3 ns Rise time tTLH3/, 5/, 6/, See figure 2 9, 10, 11 01 1.5 ns Fall time tTHL3/, 5/, 6/, See figure 2 9, 10
41、, 11 01 1.5 ns Disable time high to Z tPHZ5/, 6/, See figure 3 9, 10, 11 01 5.0 ns Disable time low to Z tPLZ5/, 6/, See figure 3 9, 10, 11 01 5.0 ns Enable time Z to high tPZH5/, 6/, See figure 3 9, 10, 11 01 7.0 ns Enable time Z to low tPZL5/, 6/, See figure 3 9, 10, 11 01 7.0 ns 1/ Device type 01
42、 supplied to this drawing will meet all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the F level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25
43、C. 2/ Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except differential voltages. 3/ Guaranteed by characterization. 4/ Output short circuit current (IOS) is specified as magnitude only, minus sign indicates
44、direction only. Only one output at a time for 1 second. 5/ Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO= 50, tr 1 ns, and tf 1 ns. 6/ CLincludes probe and jig capacitance. 7/ May be tested at higher load capacitance and the limit interpolated from characterization data
45、to guarantee this parameter. 8/ Channel-to-channel skew is defined as the difference between propagation delay of the channel and the other channels in the same chip with an event on the inputs. 9/ Chip-to-chip skew is defined as the difference between the minimum and maximum specified differential
46、propagation delays. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline X Te
47、rminal number Terminal symbol 1 DIN12 DOUT1+3 DOUT1-4 ENABLE 5 DOUT2-6 DOUT2+7 DIN28 VSS9 DIN310 DOUT3+11 DOUT3-12 ENABLE 13 DOUT4-14 DOUT4+15 DIN416 VDDFIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR
48、CUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Driver propagation delay and transition time test circuit and waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06201 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 9 DSCC FORM 2234 APR 97 FIGURE 3. D
