1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A To update Skew between outputs (tSKEW) and differential skew between outputs (t OST) and footnotes 15 and 16 to table IA. Update radiation features in section 1.5 and table IB. Add equivalent test circuit and footnote 3 in figure 6. Delete class
2、M requirements. - MAA 12-10-23 Thomas Hess REV SHEET REV A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 REV STATUS OF SHEETS REV A A A A A A A A A A A A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 4
3、3218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Charles F. Saffle APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SCHMITT
4、16-BIT BIDIRECTIONAL MULTI-PURPOSE REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 07-03-23 REVISION LEVEL A SIZE A CAGE CODE 67268 5962-06234 SHEET 1 OF 28 DSCC FORM 2233 APR 97 5962-E016-13 Provided by IHSNot for ResaleNo reproduction or networking permitt
5、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q)
6、 and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following e
7、xample: 5962 R 06234 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-385
8、35 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) id
9、entify the circuit function as follows: Device type Generic number Circuit function 01 54ACS164646S Radiation hardened, Schmitt 16-bit bidirectional multi-purpose registered transceiver with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying
10、 the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X
11、 See figure 1 56 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 S
12、IZE A 5962-06234 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDDA) -0.3 V dc to +6.0 V dc Supply voltage range (VDDB) -0.3 V dc to +6.0 V dc DC input/output voltage range, port A (VI/OA) . -0.3 V dc to VDDA + 0.3 V dc 4/ DC input/output
13、 voltage range, port B (VI/OB) . -0.3 V dc to VDDB + 0.3 V dc 4/ DC input current, any one input (IIN). 10 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . 20C/W Junction temperature (TJ) +175C Maximum powe
14、r dissipation (PD) . 250 mW 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDDA) +3.0 V dc to +3.6 V dc or +4.5 V dc to +5.5 V dc 5/ Supply voltage range (VDDB) +3.0 V dc to +3.6 V dc or +4.5 V dc to +5.5 V dc 5/ Input voltage range, port A (VINA) . 0.0 V dc to VDDAInput voltage r
15、ange, port B (VINB) . 0.0 V dc to VDDBCase operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Maximum total dose available (Dose rate = 50 - 300 rads (Si)/s) 100 Krad(Si) Single event phenomenon (SEP): No SEL occurs at effective LET (see 4.4.4.3) 110 MeV/(mg/cm2) 6/ No SEU occu
16、rs at effective LET (see 4.4.4.3) . 75 MeV/(mg/cm2) 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3
17、/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ For cold spare mode (VDDx= VSS0.3 V), VI/Oxmay be -0.3 V to the maximum recommended operating VDDx+ 0.3 V. 5/ During normal operati
18、on, VDDB VDDA. 6/ Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND
19、 MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unles
20、s otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. M
21、IL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the
22、 Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the d
23、ocuments cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications are available onl
24、ine at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, west Conshohocken, PA 19428-2959) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS devices. JESD78 IC Latch-Up Test. (C
25、opies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201-2107.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,
26、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA
27、LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the devi
28、ce manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for d
29、evice classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Power table. The powe
30、r table shall be as specified on figure 4. 3.2.5 Logic diagram. The logic diagram shall be as specified on figure 5. 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 6. 3.2.7 Radiation exposure circuit. The radiation exposure circui
31、t shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical perform
32、ance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subg
33、roup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marki
34、ng the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance ma
35、rk. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this dra
36、wing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate
37、of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA
38、WING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C for device 01 +3.0 V VDDx +3.6 V or +4.5 V VDDx +5.5 V unless otherwise specified De
39、vice type Group A subgroups Limits 3/ Unit Min Max Schmitt trigger, positive going threshold VT+VDDx= 3.0 V and 5.5 V All 1, 2, 3 0.7VDDxV M, D, P, L, R 4/ 1 0.7VDDxSchmitt trigger, negative going threshold VT-VDDx= 3.0 V and 5.5 V All 1, 2, 3 0.3VDDxV M, D, P, L, R 4/ 1 0.3VDDxSchmitt trigger, rang
40、e of hysteresis VH1VDDx= 4.5 V and 5.5 V All 1, 2, 3 0.7 V M, D, P, L, R 4/ 1 0.7 VH2VDDx= 3.0 V and 3.6 V 1, 2, 3 0.5 M, D, P, L, R 4/ 1 0.5 Low level output voltage VOL1VDDx= 4.5 V, IOL= 8 mA All 1, 2, 3 0.4 V M, D, P, L, R 4/ 1 0.4 VDDx= 4.5 V, IOL= 100 A 1, 2, 3 0.2 M, D, P, L, R 4/ 1 0.2 VOL2VD
41、Dx= 4.5 V, IOL= 12 mA 1, 3 0.4 2 0.55 M, D, P, L, R 4/ 1 0.4 VOL3VDDx= 3.0 V, IOL= 8 mA 1, 2, 3 0.5 M, D, P, L, R 4/ 1 0.5 VDDx= 3.0 V, IOL= 100 A 1, 2, 3 0.2 M, D, P, L, R 4/ 1 0.2 VOL4VDDx= 3.0 V, IOL= 12 mA 1, 3 0.5 2 0.6 M, D, P, L, R 4/ 1 0.5 See footnotes at end of table. Provided by IHSNot fo
42、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test c
43、onditions 1/ 2/ -55C TC +125C for device 01 +3.0 V VDDx +3.6 V or +4.5 V VDDx +5.5 V unless otherwise specified Device type Group A subgroups Limits 3/ Unit Min Max High level output voltage VOH1VDDx= 4.5 V, IOH= -8 mA All 1, 2, 3 VDDx- 0.5 V M, D, P, L, R 4/ 1 VDDx- 0.5 VDDx= 4.5 V, IOH= -100 A 1,
44、2, 3 VDDx - 0.2 M, D, P, L, R 4/ 1 VDDx- 0.2 VOH2VDDx= 4.5 V, IOH= -12 mA 1, 3 VDDx- 0.6 2 VDDx- 0.7 M, D, P, L, R 4/ 1 VDDx- 0.6 VOH3VDDx= 3.0 V, IOH= -8 mA 1, 2, 3 VDDx- 0.6 M, D, P, L, R 4/ 1 VDDx- 0.6 VDDx= 3.0 V, IOH= -100 A 1, 2, 3 VDDx - 0.2 M, D, P, L, R 4/ 1 VDDx- 0.2 VOH4VDDx= 3.0 V, IOH=
45、-12 mA 1, 3 VDDx- 0.8 2 VDDx- 0.95 M, D, P, L, R 4/ 1 VDDx- 0.8 Input leakage current IINVDDx= 3.6 V and 5.5 V VIN= VDDxor VSS All 1, 2, 3 -1.0 1.0 A M, D, P, L, R 4/ 1 -1.0 1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
46、HS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-06234 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ 2/ -55C TC +125C for device 01 +3.0 V VDDx +3.6 V or +4.5
47、 V VDDx +5.5 V unless otherwise specified Device type Group A subgroups Limits 3/ Unit Min Max Three-state output leakage current IOZVDDx= 3.6 V and 5.5 V VIN= VDDxor VSS All 1, 2, 3 -1.0 1.0 A M, D, P, L, R 4/ 1 -1.0 1.0 Cold sparing input leakage current (any pin) 5/ ICSVDDA= VDDB= VSSVIN= 5.5 V A
48、ll 1, 2, 3 -5.0 7.0 A M, D, P, L, R 4/ 1 -5.0 7.0 Warm sparing input leakage current (any pin) 5/ IWSAVDDB= 3.0 V and 5.5 V VDDA= VSSVIN= 5.5 VAll 1, 2, 3 -3.0 3.0 A M, D, P, L, R 4/ 1 -3.0 3.0 IWSBVDDA= 3.0 V and 5.5 V VDDB= VSSVIN= 5.5 VAll 1, 2, 3 -3.0 3.0 A M, D, P, L, R 4/ 1 -3.0 3.0 Short-circuit output current 6/ 7/ IOS1VDDx= 4.5 V and 5.5 V VO= VDDxor VSS All 1, 2, 3 -200 200 mA M, D, P, L, R 4/ 1 -200 200 IOS2VDDx= 3.0 V and 3.6 V VO= VDDxor VSS1, 2, 3 -100
