1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHEET 15 16 17 18 19 20 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING
2、IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, SINGLE, HIGH SPEED CURRENT FEEDBACK OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-01-11 AMSC N/A REVISION LEVEL SIZE A
3、 CAGE CODE 67268 5962-07231 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E436-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC F
4、ORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number
5、(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 07231 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see
6、 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified
7、 RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 RHF330 Radiation hardened, single high speed current feedback opera
8、tional amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcirc
9、uits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Flat pack 1/ 1.2.5 Lea
10、d finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Al2O3ceramic header with metalized bottom side and pullback of 0.01 inch x 0.02 inch. Provided by IHSNot for ResaleNo reproduction or networking permitted witho
11、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage (VCC) : Single supply mode . VCCwith respect to GND = 6 V Dual supply mode +VCC= +3 V I
12、nput voltage range (VIN) 2.5 V Differential input voltage (VID) . 0.5 V 3/ Power dissipation (PD) at TA= +25C for TJ= 150C 830 mW 4/ Maximum junction temperature (TJ) +150C Lead temperature (soldering, 10 seconds) +260C 5/ Storage temperature range . -65C to +150C Thermal resistance, junction-to-cas
13、e (JC) . 22C/W Thermal resistance, junction-to-ambient (JA) 150C/W 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V to 5.5 V Common mode input voltage range (VICM) -VCC+1.5 V to +VCC- 1.5 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total
14、 dose available (dose rate = 50 300 rads(Si)/s) 300 krads(Si) 6/ Single event phenomenon (SEP) : Single event latch up (SEL) at effective LET . 110 MeV/(mg/cm2) Single event transient (SET) (sat= 6 x 10-4cm2/device) at effective LET . 110 MeV/(mg/cm2) _ 2/ Stresses above the absolute maximum rating
15、may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 4/ Short circuits can cause excessive heating. Destructive di
16、ssipation can result from short circuit amplifiers. 5/ Distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until three minutes have elapsed. 6/ This part has been tested and does not demonstrate low dose rate sensitivity at 300 krads(Si). For low dose rate
17、, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. For high dose rate, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, conditi
18、on A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, s
19、tandards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - In
20、tegrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings.
21、MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following doc
22、ument(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena
23、 (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between th
24、e text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for
25、device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for devi
26、ce class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction,
27、and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connec
28、tions shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prepari
29、ng and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical perfor
30、mance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requireme
31、nts. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where mark
32、ing of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Mar
33、king for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-385
34、35, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required f
35、rom a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for de
36、vice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38
37、535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for an
38、y change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation
39、 shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking p
40、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Li
41、mits Unit +VCC= 2.5 V, -VCC= -2.5 V unless otherwise specified Min Max Input offset voltage VIO1,2,3 01 -3.1 3.1 mV Input bias current +IIB1,2,3 01 55 A Input bias current -IIB1 01 22 A 2,3 34 Common mode rejection ratio CMRR VIC= 1 V 1,2,3 01 48 dB Supply voltage rejection ratio SVR VCC= 3.5 V to 5
42、 V 1 01 60 dB 2,3 45Supply current ICCNo load 1,2,3 01 20.2 mA Transimpedance ROLVOUT= 1 V, RL= 100 1 01 104 k 2,3 85Output sink current ISINKOutput to GND 1,2,3 01 360 mA Output source current ISOURCEOutput to GND 1,2,3 01 -320 mA Low level output voltage VOLRL= 100 1 01 -1.5 V 2,3 -1.35 High level
43、 output voltage VOHRL= 100 1 01 1.5 V 2,3 1.35-3 dB bandwidth BW RL= 100 , AV= -4 4,5,6 01 400 MHz Slew rate 2/ +SR VOUT= 2 VPP, AV= +2, 4,5,6 01 1400 V/s -SR RL= 100 1400 1/ RHA devices supplied to this drawing have been characterized through all levels M, D, P, L, R, and F of irradiation. However,
44、 this device is tested only at the “F” level for high and low dose rates. Pre and Post irradiation values are identical unless otherwise specified in Table IA. When performing post irradiation electrical measurements for any RHA level, TA= +25C. The radiation end points limits for the noted paramete
45、rs are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D for low dose rate and condition A for high dose rate. 2/ Controlled via design or process and is not directly tested. Characterized on initial design release and upon design or process changes which affect this p
46、arameter. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07231 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IB. SEP test limits. 1/ 2/ 3/ Device type VCC
47、= 2.2 V Bias for latch-up test, VCC= 2.8 V, no latch up LET = 4/ Effective LET no transient MeV/(mg/cm2) Maximum device cross section 01 LET = 110 6 x 10-4cm2/device LET = 110 1/ For SEP test conditions, see 4.4.4.4 herein. 2/ Technology characterization and model verification supplemental by in lin
48、e data may be used in lieu of end of line testing. Test plan must be approved by technical review board (TRB) and qualifying activity. 3/ Worst case temperature is TA= +125C 10C for SEL test and TA= +25C 10C for SET test. 4/ Tested to a LET of =110 MeV/(mg/cm2) for device type 01 with no latch up (SEL). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifica
