1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add descriptive designator CDIP2-T8 for case outline letter “P”. Under paragraph 1.3, footnote 3/, delete JAand substitute JC. - ro 10-04-20 C. SAFFLE B Under paragraph 1.3; make change to the ESD HBM limit from 250 V to 2,000 V and add new footn
2、ote; delete entirely “RTCT pin” and “Other pins” limits. - ro 11-03-01 C. SAFFLE C Add device types 05, 06, 07, and 08. Add paragraph 6.7. - ro 12-09-20 C. SAFFLE D Add device class T to device type 04. - ro 13-08-13 C. SAFFLE REV SHEET REV D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 REV STAT
3、US REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF T
4、HE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, PULSE WIDTH MODULATOR CONTROLLER, MONOLITHIC SILICON DRAWING APPROVAL DATE 10-01-28 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-07249 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E515-13 Pro
5、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07249 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assur
6、ance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When ava
7、ilable, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN
8、is as shown in the following example: 5962 R 07249 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA ma
9、rked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Rising under Maximum Device type Generic voltage lockout duty cycle C
10、ircuit function 01 ISL78840ASRH 7.0 V 100 % Pulse width modulator controller 02 ISL78841ASRH 7.0 V 50 % Pulse width modulator controller 03 ISL78843ASRH 8.4 V 100 % Pulse width modulator controller 04 ISL78845ASRH 8.4 V 50 % Pulse width modulator controller 05 ISL78840ASEH 7.0 V 100 % Pulse width mo
11、dulator controller 06 ISL78841ASEH 7.0 V 50 % Pulse width modulator controller 07 ISL78843ASEH 8.4 V 100 % Pulse width modulator controller 08 ISL78845ASEH 8.4 V 50 % Pulse width modulator controller 1.2.3 Device class designator. The device class designator is a single letter identifying the produc
12、t assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. Provided by IHSNot for Res
13、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07249 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as f
14、ollows: Outline letter Descriptive designator Terminals Package style P CDIP2-T8 8 Dual in line X See figure 1 8 Dual flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VDD) GND - 0.3
15、V to +14.7 V Output voltage . GND - 0.3 V to VDD+ 0.3 V Signal pins . GND - 0.3 V to 6.0 V Electrostatic discharge (ESD) classification: Human body model (HBM) 2,000 V 3/ Maximum junction temperature (TJ) +150C Maximum storage temperature range (TSTG) . -65C to +150C Maximum lead temperature (solder
16、ing, 10 seconds) (lead tips only) . +300C Thermal resistance, junction to case (JC): 4/ Case P . 20C/W Case X . 15C/W 1.4 Recommended operating conditions. Supply voltage range (VDD) 9 V to 13.2 V 5/ Operating free-air temperature range (TA) -55C to +125C 1.4.1 Operational performance characteristic
17、s. 6/ Under voltage lockout (UVLO) section, hysteresis voltage : Device types 01 02, 05, and 06 0.4 V Device types 03, 04, 07, and 08 . 0.8 V Voltage reference (VREF) section, long term stability (TA= 125C at 1,000 hours) 5 mV Error amplifier (EA) section, open loop voltage gain 90 dB EA section, un
18、ity gain bandwidth . 1.5 MHz EA section, power supply rejection ratio (f = 120 Hz, VDD= 9 V to 13.2 V) 80 dB Oscillator (OSC) section, temperature stability 5 % OSC section, amplitude, peak to peak 1.75 V OSC section, resistance timing / capacitance timing (RTCT) discharge voltage . 1 V OUTPUT secti
19、on, peak output current (COUT= 1 nF) . 1 A _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Absolute maximum ratings apply to operation in a heavy ion environment as p
20、er Table IB. For applications that operate outside a heavy ion environment, the 14.7 V absolute maximum rating increases to 16.5 V. 3/ The HBM rating is 250 V for product having a date code of 1036 or earlier. The HBM rating is 2,000 V for product beginning with date code 1037. 4/ JCis measured with
21、 the component mounted on a high effective thermal conductivity test board in free air. 5/ All voltages are with respect to GND. 6/ The values shown reflect TA= +25C operation and are not guaranteed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST
22、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-07249 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device types 01, 02, 03, 04 100 krads(Si) 7/ Device types 05, 06, 07, 08
23、100 krads(Si) 8/ Maximum total dose available (dose rate 0.01 rads(Si)/s): Device type 05, 06, 07, 08 50 krads(Si) 8/ Single event phenomenon (SEP): No Single event latchup (SEL) occurs at effective LET (see 4.4.4.2) 80 MeV/mg/cm29/ 10/ No Single event burnout (SEB) occurs at effective LET (see 4.4.
24、4.2) . 80 MeV/mg/cm29/ 10/ NO Single event transient (SET) (VOUTwithin 3%) at LET (see 4.4.4.2) . 40 MeV/mg/cm29/ 10/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specif
25、ied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard
26、 Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or
27、from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 7/ Device types 01, 02, 03, and 04 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted paramet
28、ers are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si) . 8/ Device types 05, 06, 07, and 08 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, metho
29、d 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 9/ SEP tests performed with VREFbypass capacitor of 0.22 F and FSW = 200 kHz. SEB and SEL tests done on a stand alone open loop configuration. For SEL, no latch up requiring manual
30、intervention were observed. SET tests done in a closed loop configuration. The (VOUT) was measured across bulk capacitor of the application. 10/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics but are not production t
31、ested unless specified by the customer through the purchase order or contract. See manufacturers SEE test report for more information. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07249 DLA LAND AND MARITI
32、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contrac
33、t. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) from Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, We
34、st Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption
35、 has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not
36、affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and he
37、rein for device classes Q, T and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.4 Radi
38、ation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unle
39、ss otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups spec
40、ified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space lim
41、itations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mar
42、k for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 her
43、ein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance.
44、A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5
45、962-07249 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Undervoltage lockout sect
46、ion START threshold voltage 1,2,3 01,02,05,06 6.5 7.5 V 03,04,07,08 8.0 9.0 STOP threshold voltage 1,2,3 01,02,05,06 6.1 6.9 V 03,04,07,08 7.3 8.0 Startup current IDDVDD START threshold 1,2,3 All 125 A M,D,P,L,R 1 500 Operating current IDD3/ 1,2,3 All 4.0 mA Operating supply current IDIncludes 1 nF
47、GATE loading 1,2,3 All 5.5 mA Reference voltage section Overall accuracy VREFOver line (VDD= 9 V to 13.2 V), load of 1 mA and 10 mA, temperature 1,2,3 All 4.925 5.050 V Current limit, sourcing 1,2,3 All -20 mA Current limit, sinking 1,2,3 All 5 mA Current sense section Input bias current IIBVCS= 1 V
48、 1,2,3 All -1.0 1.0 A Input signal, maximum 1,2,3 All 0.97 1.03 V Gain, ACS= VCOMP/ VCS 0 VCS 910 mV, VFB= 0 V 1,2,3 All 2.5 3.5 V/V CS to OUT delay 9,10,11 All 55 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-07249 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125
