1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add electrostatic discharge human body model limit under paragraph 1.3. - ro 10-02-12 C. SAFFLE B Make changes to footnote 6/ under paragraph 1.5 and footnote 3/ under Table IA. Add a paragraph under paragraph 1.5. - ro 10-09-21 C. SAFFLE C Add d
2、evice type 02. Make changes to 1.2.2, 1.5, Table IA, Table IB, figure 2, and 4.4.4.1. -rrp 11-08-15 C. SAFFLE D Under paragraph 1.3, footnote 2/, delete absolute maximum rating 6 V and replace with 6.5 V. Under paragraph 1.3, footnote 3/ add the last sentence. Delete the radiation exposure circuit.
3、- ro 12-07-03 C. SAFFLE E Add device type 03 and case outline Y. Make changes to case outline X dimensions A, D, D1, E, E1, and L as specified under figure 1. Add heatsink and package lid descriptions to figure 2. Delete device class M references. - ro 13-06-12 C. SAFFLE REV SHEET REV E E E E E E E
4、E E E E E E SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS
5、DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, RADIATION HARDENED, LINEAR, SYNCHRONOUS BUCK REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 10-01-20 AMSC N/A REVISION LEVEL E SIZE A
6、CAGE CODE 67268 5962-09225 SHEET 1 OF 27 DSCC FORM 2233 APR 97 5962-E361-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC
7、FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).
8、When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 09225 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.
9、4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) id
10、entify the circuit function as follows: Device type Generic number Circuit function 01 ISL70001SRH Radiation hardened, synchronous buck regulator 02 ISL70001SEH Radiation hardened, synchronous buck regulator 03 ISL70001ASEH Radiation hardened, synchronous buck regulator 1.2.3 Device class designator
11、. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Out
12、line letter Descriptive designator Terminals Package style X See figure 1 48 Quad flat pack Y See figure 1 48 Quad flat pack with heat sink 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permi
13、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ AVDD pins AGND 0.3 V to AGND + 5.7 V DVDD pins DGND 0.3 V to DGND + 5.7 V LXx, PVINx
14、 pins . PGNDx 0.3 V to PGNDx + 5.7 V AVDD AGND, DVDD DGND . PVINx PGNDx 0.3 V EN, FB, PORSEL, REF pins AGND 0.3 V to AVDD + 0.3 V M/S, SYNC, TDI, TDO, ZAP pins DGND 0.3 V to DVDD + 0.3 V PGOOD pin . DGND 0.3 V to DGND + 5.7 V SS pin . DGND 0.3 V to DGND + 2.5 V Power dissipation (PD) : Case outline
15、X: TA= +25C 3.28 W TA= +125C 0.54 W TC= +25C 40.00 W TC= +125C 6.66 W Case outline Y: TA= +25C 6.31 W TA= +125C 1.05 W TC= +25C 92.30 W TC= +125C 15.38 W Junction temperature (TJ) . +145C Maximum lead temperature (soldering, 10 seconds) +260C Storage temperature range . -65C to +150C Electrostatic d
16、ischarge (ESD) classification: Human body model (HBM) 2000 V Thermal resistance, junction-to-case (JC) Case outline X 3.0C/W 4/ Case outline Y 1.3C/W 4/ Thermal resistance, junction-to-ambient (JA) Case outline X 36.5C/W 5/ Case outline Y 19C/W 5/ 1.4 Recommended operating conditions. AVDD AGND + 3
17、V to 5.5 V DVDD DGND + 3 V to 5.5 V PVINx PGNDx + 3 V to 5.5 V AVDD AGND, DVDD DGND . PVINx PGNDx 0.1 V EN, FB, PORSEL AGND to AVDD M/S, PGOOD, SYNC DGND to DVDD REF, SS Internally set TDI, TDO, ZAP DGND ILXx(TJ +145C) 0 A to 1.0 A Ambient operating temperature range (TA) . -55C to +125C _ 1/ Stress
18、es above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Absolute maximum ratings apply to operation in a heavy ion environment as per Table IB. For applications that operate outside a h
19、eavy ion environment, the 5.7 V absolute maximum rating increases to 6.5 V. 3/ The 5.7 V absolute maximum rating must be met for a 20 MHz bandwidth limited observation at the device pins. In addition, for a 600 MHz bandwidth limited observation, the peak transient voltage on PVINx (measured to PGNDx
20、) must be less than 7.1 V with a duration above 5.7 V of less than 10 ns, and the peak transient voltage on LXx (measured to PGNDx) must be less than 7.9 V with a duration above 5.7 V of less than 10 ns. VIN= AVDD = DVDD = PVINx = EN = M/S = 3 V or 5.5 V and GND = AGND = DGND = PGNDx = TDI = TDO = Z
21、AP = 0 V. 4/ For JC, the case temperature location is the center of the package underside. 5/ JAis measured in free air with the component mounted on a high effective thermal conductivity test board. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST
22、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-09225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100 krads(Si) 6/ Maximum total dose available (dose rate 10 mrads(Si)/s):
23、Device type 01 . Not production tested 7/ Device types 02 and 03 . 50 krads(Si) 7/ 8/ Single event phenomenon (SEP) (see 4.4.4.2) : No SEL occurs at effective LET (VIN= 5.7 V, TC= +125C) . 86.4 MeV/mg/cm29/ No SEB occurs at effective LET (VIN= 5.7 V, TC= +125C) 86.4 MeV/mg/cm29/ No SET occurs at eff
24、ective LET ( 1 LXx pulse perturbation) (TC= +25C) 86.4 MeV/mg/cm29/ Single event phenomenon (SEP) cross sections: Single event functional interrupt (SEFI) (VIN= 5 V, TC= +25C, LET = 86.4 MeV/mg/cm2) . = 6.5 x 10-8cm29/ 10/ Single event functional interrupt (SEFI) (VIN= 3 V, TC= +25C, LET = 86.4 MeV/
25、mg/cm2) . = 1.4 x 10-6cm29/ 10/ Single event functional interrupt (SEFI) (VIN= 3 V, TC= +25C, LET = 61 MeV/mg/cm2) = 1.1 x 10-7cm29/ 10/ The manufacturer supplying RHA parts on this drawing has performed characterization testing that demonstrates the parts do not exhibit enhanced low dose rate sensi
26、tivity (ELDRS) according to MIL-STD-883 Method 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent sp
27、ecified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Stan
28、dard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil
29、 or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 6/ This part has been tested and does not exhibit enhanced low dose rate sensitivity (ELDRS). Radiation end point limits for the noted parameters are guaranteed only for the conditions
30、specified in MIL-STD-883, method 1019, condition A. 7/ For device types 01, 02 and 03, the manufacturer supplying RHA parts on this drawing has performed characterization testing to a level of 150 krads(Si) at low and high dose rate in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1. Ther
31、efore, this part may be considered ELDRS free. Testing beyond 150 krads(Si) was not performed. 8/ Device types 02 and 03 are production lot acceptance tested in accordance with MIL-PRF-38535, Appendix B, technology conformance inspection (TCI) group E, subgroup 2 to 50 krads(Si) at low dose rate ( 1
32、0 mrads(Si)/s). 9/ Limits are characterized at initial qualification and after any design or process changes which may affect the SEP characteristics, but devices are not production tested unless specified by the customer through the purchase order or contract. 10/ SEFI behavior is similar to an ove
33、rcurrent protection (OCP) fault with soft start and automatic recovery. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM
34、 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 Sta
35、ndard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P.O. Box C700, 100 Bar Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order
36、 of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Ite
37、m requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as descri
38、bed herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case
39、 outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure
40、 circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical
41、performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for
42、each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of
43、not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or
44、 “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA L
45、and and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device class
46、es Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-09225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 RE
47、VISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Power supply section Operating supply current IOPVIN= 5.5 V 1,2,3 01, 02, 65 mA VIN=
48、3.6 V 1,2,3 03 45 Shutdown supply current ISDVIN= 5.5 V, EN = GND 1,2,3 01, 02 12 mA 03 6 VIN= 3.6 V, EN = GND 1,2,3 01, 02 6 03 4.5 Output voltage section Reference voltage tolerance VREF1,2,3 01, 02, 03 0.594 0.606 V Output voltage tolerance VOUTVOUT= 0.8 V to 2.5 V, VIN= 4.5 V to 5.5 V, 3/ 4/ IOUT= 0 A to 6 A 4,5,6 01, 02, 03 -2 2 % VOUT= 0.8 V to 2.5 V, VIN= 3 V to 3.6 V, 3/ 4/ IOUT= 0 A to 6 A 4,5,6 -2 2 Feedback (FB) input leakage current IFBVIN= 5.5 V, VFB= 0.6 V 1,2,3 01, 02, 03 -1 1 A PWM control logic section Oscillator
