1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness assurance requirements. - ro 13-11-15 C. SAFFLE REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43
2、218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, SYNCHRONOUS STEP DOWN CONVERTER, MONOLITHIC SILICON D
3、RAWING APPROVAL DATE 13-06-14 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-10221 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E567-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MA
4、RITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are availa
5、ble and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 10221 01 V S C Federal stock class designator RHA designator (see 1.2.1) Device
6、type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicate
7、s a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 TPS50601-SP 6.3 V, 6 A synchronous step down converter 1.2.3 Device class designator. The device class designator is a single letter identifying the p
8、roduct assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style S CDFP3
9、-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO 432
10、18-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage (VIN) : Input voltage (VIN) . -0.3 V to 7 V Power input voltage (PVIN) -0.3 V to 7 V Enable (EN) . -0.3 V to 5.5 V Bootstrap cap (BOOT) . -0.3 V to 14 V Sense voltage (VSENSE) . -0.3 V to 3.3 V Comp
11、ensation (COMP) . -0.3 V to 3.3 V Power good fault (PWRGD) . -0.3 V to 5.5 V Slow start and tracking (SS/TR) -0.3 V to 5.5 V Synchronization (SYNC) -0.3 V to 7 V Output voltage (VOUT) : BOOT-PH 0 V to 7 V Switch node (PH) . -1 V to 7 VPH 10 ns transient . -3 V to 7 V Output current . 6 A Differentia
12、l voltage (Vdiff), GND to exposed thermal pad -0.2 V to 0.2 V Source current: High side switch current limit (between VINand PH) . 7.8 A Low side switch current limit (between GND and PH) . 6 A Sink current: COMP 200 A PWRGD . -0.1 mA to 5 mA Electrostatic discharge (ESD): Human body model (HBM) 1 k
13、V Charged device model (CDM) . 1 kV Operating junction temperature (TJ) -55C to +150C Storage temperature . -65C to +150C Thermal resistance, junction to case (JC) with thermal pad 0.52C/W 2/ 3/ 4/ Thermal resistance, junction to board (JB) 43.1C/W 2/ 3/ 4/ Thermal impedance, junction to ambient (JA
14、) . 39.9C/W 2/ 3/ 4/ 1.4 Recommended operating conditions. Input voltage (VIN) . 3 V to 6.3 V Power input voltage (PVIN) 1.6 V to 6.3 V Operating ambient temperature (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at t
15、he maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation may be limited by overcurrent protection. 3/ Power rating at a specific ambient temperature (TA) should be determined with a junction temperature (TJ) of 150C. This is the point where distortion starts to
16、substantially increases. Thermal management of the printed circuit board (PCB) should strive to keep the junction temperature at or below 150C for best performance and long term reliability. 4/ Test board conditions: a. 2.5 inches x 2.5 inches, four layers, thickness: 0.062 inch. b. Two ounces coppe
17、r traces located on the top of the PCB. c. Two ounces copper ground planes on the two internal layers and bottom layer. d. Four 0.010 inch thermal vias located under the device package. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCI
18、RCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (effective dose rate = 0.1 rad(Si)/s) . 100 krads(Si) 5/ 6/ The manufacturer supplying RHA device on this drawing has pe
19、rformed characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a dose level of 100 krads (Si). 2. APPLICABLE DOCUMENTS 2.1 Gov
20、ernment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFIC
21、ATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard
22、 Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of
23、 a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 5/ The manufacturer supplying device type 01 has per
24、formed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as spec
25、ified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100 krads(Si). 6/ Device type 01 is irradiated at dose rate = 50 - 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dos
26、e rate after extended room temperature anneal = 0.1 rad(Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower environment. Provided by IHSNot for ResaleNo reproduction or networking
27、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accorda
28、nce with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physi
29、cal dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The ra
30、diation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein,
31、 the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electr
32、ical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has
33、the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall
34、 be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance subm
35、itted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required fo
36、r device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO
37、 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply voltage (VINand PVINpins). PVINoperating input voltage 1,2,
38、3 01 1.6 6.3 V VINoperating input voltage 1,2,3 01 3 6.3 V VINinternal under voltage lockout (UVLO) threshold VINrising 1,2,3 01 3 V VINshutdown supply current EN = 0 V 1,2,3 01 5.9 mA VINoperating non switching supply current VSENSE= voltage bandgap (VBG) = 0.795 V 1,2,3 01 10 mA Enable and UVLO (E
39、N pin). Enable threshold voltage Rising 1,2,3 01 1.18 V Enable threshold voltage Falling 1,2,3 01 1.05 V Voltage reference. Voltage reference 0 A IOUT 6 A 1 01 0.785 0.804 V 2 0.785 0.815 3 0.767 0.804 Current limit. High side switch current limit threshold VIN= 6.3 V 1,2,3 01 8 A Low side switch so
40、urcing current limit VIN= 6.3 V 1,2,3 01 7 A Internal switching frequency. Internal set frequency RT = open 4,5,6 01 395 585 kHz See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-
41、10221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max External synch
42、ronization. SYNC out low-to-high rise time (10%/90%) CL= 25 pF 9,10,11 01 111 ns SYNC out high-to-low fall time (90%/10%) CL= 25 pF 9,10,11 01 15 ns SYNC out high level threshold IOH= 50 A 1,2,3 01 2 V SYNC out low level threshold IOL= 50 A 1,2,3 01 600 mV SYNC in low level threshold 1,2,3 01 800 mV
43、 SYNC in high level threshold 1,2,3 01 1.85 V SYNC in frequency range % of program frequency 4,5,6 01 -5 5 % 100 1000 kHz PH (PH pin). Minimum on time Measured at 90% to 90% of VIN, IPH= 2 A 9 01 175 ns BOOT (BOOT pin). BOOT and PH pins UVLO 1,2,3 01 3 V Slow start and tracking (SS/TR pin). SS/TR to
44、 VSENSEmatching V(SS/TR)= 0.4 V 1,2,3 01 90 mV Power good (PWRGD pin). Output high leakage VSENSE= Vref, V(PWRGD)= 5 V 1,2,3 01 181 nA Output low voltage I(PWRGD)= 2 mA 1,2,3 01 0.3 V Minimum VINfor valid output V(PWRGD) 0.5 V at 100 A 1,2,3 01 1 V Minimum SS/TR voltage for PWRGD 1,2,3 01 1.4 V 1/ U
45、nless otherwise specified, VIN= 3 V to 6.3 V and PVIN= 1.6 V to 6.3 V. 2/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise
46、 specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C (see 1.5 herein). 3/ The manufacturer supplying device type 01 has performed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no e
47、nhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A and condition D to a maximum total dose of 100 kads(Si). 4/ Device type 01
48、is irradiated at dose rate = 50 - 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 0.1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower environment. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,
