1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Table IA: For Vout Step Line Transient, remove “4/”. Figure 2 terminal connections: Correct terminal 2 from “No connection” to “Positive Output”. Correct terminal 4 from “Output” to “Negative Output”. gc 11-12-14 Charles F. Saffle B Paragraph 1.3
2、: Remove “Power dissipation” and “Output power”. Table IA: “Start Up Delay” test, remove footnote “11/” reference. Figure I case outline “X” and “Y”, add seal ring “b2” to figure and dimensioning table. Remove “Figure 3 Radiation exposure circuits”. -gc 13-12-03 Charles F. Saffle REV SHEET REV B B B
3、 B SHEET 15 16 17 18 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ THIS DRAWING IS AVAI
4、LABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR, DUAL CHANNEL, DC-DC CONVERTER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 11-10-25 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-11215 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E07
5、3-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five produc
6、t assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN s
7、hall be as shown in the following example: 5962 P 11215 01 K X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designat
8、or. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 S
9、VHF2805D DC-DC Converter, 15 W, 5 V Outputs 02 SVHF2812D DC-DC Converter, 20 W, 12 V Outputs 03 SVHF2815D DC-DC Converter, 20 W, 15 V Outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the re
10、quirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in s
11、pace applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a
12、possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the req
13、uirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined
14、 by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV
15、ISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Dual-in-line Y See figure 1 8 Dual-in-line, flange mount 1.2.5 Lead finish. The lead
16、 finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input Voltage (Continuous) +50 V dc Input Voltage (Transient, 1 second) . +80 V dc Junction Temperature Rise to Case +12 C Storage Temperature . -65 C to +150 C Lead Solder Temperature (10 seconds) +270 C 1.4 Recommende
17、d operating conditions. Input Voltage Range . +15 V dc to +50 V dc Case Operating Temperature Range (TC) -55 C to +125 C 1.5 Radiation features. Maximum total dose available (dose rate = 30 - 300 rad(Si)/s) 30 krad (Si) 3/ Maximum total dose available (dose rate 10 mrad(Si)/s) LDR: Components: . 30
18、krad (Si) 3/ 4/ Hybrid: . 5/ Single event phenomenon (SEP) effective linear energy threshold (LET): SEL, SEB, SEGR, SEFI 44 MeV-cm2/mg 2/ 6/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawi
19、ng to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method
20、 Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Single event perform
21、ance is tested with minor transients only; no dropouts, shutdowns, latch up or burn out. 3/ Bipolar device types may degrade from displacement damage from radiation which could affect RHA levels. These device types have not been characterized for displacement damage. 4/ Components: The bipolar, BiCM
22、OS linear and mixed signal semiconductor components have been tested to High Dose Rate (HDR) Condition C (30-300 rad(Si)/s) and Low Dose Rate (LDR) per condition D of MIL-STD-883, method 1019. The difference between HDR and LDR test results has been compared to determine if the semiconductors exhibi
23、t ELDRS effect. Low dose rate sensitivity was not demonstrated. 5/ Hybrid: Hybrid devices have been tested at HDR. LDR testing on the device has not been completed. 6/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI
24、T DRAWING SIZE A 5962-11215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available on
25、line at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MAT
26、ERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing take
27、s precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-3853
28、4. Compliance with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however th
29、e performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design,
30、construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure
31、circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical perfor
32、mance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 M
33、arking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the
34、 manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those whi
35、ch, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacture
36、r in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as requir
37、ed in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION L
38、EVEL B SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or f
39、unction as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revis
40、ion level control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2)
41、TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. c. PIND testing, method 20
42、20, condition A, of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11215 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical perfo
43、rmance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output Voltage +VOUT+IOUT, -IOUT= 1.5 A 1 01 4.95 5.05 V dc 2,3 4.925 5.075 1,2,3 7/ 4.89 5.10 +IOUT, -IOUT= 0.83 A 1
44、02 11.88 12.12 2,3 11.82 12.18 1,2,3 7/ 11.66 12.3 +IOUT, -IOUT= 0.67 A 1 03 14.85 15.15 2,3 14.775 15.225 1,2,3 7/ 14.565 15.4 -VOUT+IOUT, -IOUT= 1.5 A 1 01 -4.8 -5.2 2,3 -4.75 -5.25 1,2,3 7/ -4.715 -5.275 +IOUT, -IOUT= 0.83 A 1 02 -11.8 -12.2 2,3 -11.52 -12.48 1,2,3 7/ -11.36 -12.6 +IOUT, -IOUT= 0
45、.67 A 1 03 -14.8 -15.2 2,3 -14.4 -15.6 1,2,3 7/ -14.19 -15.775 Output Current 8/ 9/ IOUTVOUTVIN= 15 V dc to 50 V dc 1,2,3 01 2.1 A 02 1.17 03 .93 VOUTRipple Voltage VRIP VOUTBW = 20 Hz to 10 MHz 1,2,3 All 60 mVp-p VOUTLine Regulation VRLINE+VOUTVIN= 16 V dc to 40 V dc 1,2,3 All 20 mV -VOUTVIN= 16 V
46、dc to 40 V dc 200 VOUTLoad Regulation VRLOAD+VOUTNo Load to Full Load 1,2,3 All 50 mV -VOUTNo Load to Full Load 200 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11215 DLA LAN
47、D AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/ -55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit
48、Min Max -VOUTCross Regulation -VRCRS+Load 70%, -Load 30% +Load 30%, -Load 70% 1,2,3 All 500 mV Input Current IINIOUT= 0, Inhibit (pin 1) = 0 1,2,3 All 6 mA IOUT= 0, Inhibit (pin 1) = open 65 IINRipple Current IRIPBW = 20 Hz to 10 MHz 1,2,3 01 60 mAp-p 02,03 90 1 7/ 01 60 2,3 7/ 90 1 7/ 02,03 90 2,3 7/ 110 Efficiency Eff +IOUT, -IOUT= 1.5 A 1,2,3 01 73 % +IOUT, -IOUT= 0.83 A 02 78 +IOUT, -IOUT= 0.67 A 03 79 Isolation ISO 500 V dc, TC= +25C 1 All 100 M Capacitive Load 10/ CL
