1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 16 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg Cecil DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Greg Cecil COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.
2、dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Charles F. Saffle MICROCIRCUIT, HYBRID, LINEAR, SINGLE CHANNEL, DC-DC CONVERTER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 11-10-25 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-11217 SHEET 1 OF 16 D
3、SCC FORM 2233 APR 97 5962-E499-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11217 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dr
4、awing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in
5、the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 P 11217 01 K X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardne
6、ss assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic n
7、umber Circuit function 01 SVFL283R3S DC-DC Converter, 66 W, +3.3 V Output 02 SVFL2805S DC-DC Converter, 100 W, +5 V Output 03 SVFL2812S DC-DC Converter, 110 W, +12 V Output 04 SVFL2815S DC-DC Converter, 120 W, +15 V Output 1.2.3 Device class designator. This device class designator shall be a single
8、 letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documen
9、tation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military qualit
10、y class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are ba
11、sed upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect sys
12、tem performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC
13、UIT DRAWING SIZE A 5962-11217 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 12 Side
14、 Lead, Flange Mount 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input Voltage (Continuous) . +40 V dc Input Voltage (Transient, 1 second) +50 V dc Power Dissipation (PD, Full Load, TCASE= +125C) . 41 W Output Power (Dependant on Output
15、Voltage) . 120 W Junction Temperature Rise to Case . +15 C Storage Temperature -65 C to +150 C Lead Solder Temperature (10 seconds) . +270 C 1.4 Recommended operating conditions. Input Voltage Range +16 V dc to +40 V dc Case Operating Temperature Range (TC) . -55 C to +125 C 1.5 Radiation features.
16、Maximum total dose available (dose rate = 30 - 300 rad(Si)/s) . 30 krad (Si) 3/ Maximum total dose available (dose rate 10 mrad(Si)/s) LDR: Components: 30 krad (Si) 3/ 4/ Hybrid: 5/ Single event phenomenon (SEP) effective linear energy threshold (LET): SEL, SEB, SEGR, SEFI . 44 MeV-cm2/mg 2/ 6/ 2. A
17、PPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEP
18、ARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. 1/ Stresses above the absolute maximum ratings
19、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Single event performance is tested with minor transients only; no dropouts, shutdowns, latch up or burn out. 3/ Bipolar device types may degrade from displacement da
20、mage from radiation which could affect RHA levels. These device types have not been characterized for displacement damage. 4/ Components: The bipolar, BiCMOS linear and mixed signal semiconductor components have been tested to High Dose Rate (HDR) Condition C (30-300 rad(Si)/s) and Low Dose Rate (LD
21、R) per condition D of MIL-STD-883, method 1019. The difference between HDR and LDR test results has been compared to determine if the semiconductors exhibit ELDRS effect. Low dose rate sensitivity was not demonstrated. 5/ Hybrid: Hybrid devices have been tested at HDR. LDR testing on the device has
22、not been completed. 6/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11217 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HA
23、NDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
24、19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F 1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Se
25、miconductor Devices. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obt
26、ained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Qualit
27、y Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification i
28、n the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s)
29、shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuits. The radiation exposure circuits shall be as specified on figure 3. 3.3 Electrical performance characteristics. Unless othe
30、rwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests fo
31、r each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general p
32、erformance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all
33、parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DLA Land and Maritime-VA) upon request. 3.7 Certificate of compliance. A certificate of co
34、mpliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of confor
35、mance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11217 DLA LAND AND
36、MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the Q
37、M plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintain
38、ed by the manufacturer under document revision level control and shall be made available to either DLA Land and Maritime-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent sp
39、ecified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of t
40、he manufacturer. c. PIND testing, method 2020, condition A, of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11217 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 6 DSCC FO
41、RM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/-55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output Voltage VOUTIOUT= 20 A 1 01 3.267 3.333 V dc 2,3 3.25 3.351,2,3 7/ 3.24
42、 3.35 IOUT= 20 A 1 02 4.95 5.05 2,3 4.925 5.0751,2,3 7/ 4.89 5.10 IOUT= 9.17 A 1 03 11.88 12.12 2,3 11.82 12.181,2,3 7/ 11.66 12.28 IOUT = 8 A 1 04 14.85 15.15 2,3 14.775 15.2251,2,3 7/ 14.565 15.355 Output Current 8/ 9/ IOUTVIN= 16 V dc to 40 V dc 1,2,3 01,02 20 A 03 9.2 04 8 VOUTRipple Voltage VRI
43、P BW = 20 Hz to 10 MHz 1,2,3 All 80 mVp-p VOUTLine Regulation VRLINEVIN= 16 V dc to 40 V dc 1,2,3 All 20 mV VOUTLoad Regulation VRLOADNo Load to Full Load 1,2,3 01 80 mV 02 100 03,04 120 Input Current IINIOUT= 0, Inhibit 1 (see figure 2) = 0 1,2,3 All 6 mA IOUT= 0, Inhibit 2 (see figure 2) = 0 70 IO
44、UT= 0, Inhibit 1 and 2 (see figure 2) = Open 120 IINRipple Current IRIPBW = 20 Hz to 10 MHz 1,2,3 All 80 mAp-p 1 7/ 80 2,3 7/ 140 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
45、-11217 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ 4/ 5/ 6/-55C TC+125C VIN= +28 V dc 5% Full Load unless otherwise specified Group A subgroups Device type L
46、imits Unit Min Max Efficiency Eff IOUT= 20 A 1,2,3 01 67 % IOUT= 20 A 02 72 IOUT= 9.17 A 03 79 IOUT= 8 A 04 80 Isolation ISO Input to output or any pin to case at 500 V dc, TC= +25C 1 All 100 M Capacitive Load 10/ CLNo effect on DC performance, TC= +25C 1 01,02 1000 F 03,04 500 Short Circuit Power D
47、issipation PDShort Circuit 1,2,3 All 50 W Switching Frequency FS1,2,3 All 425 600 kHz Synchronization Frequency FSYNCVH VL= 5 V Duty Cycle = 20% - 80% 1,2,3 All 500 600 kHz VOUTStep Load Transient VTLOAD50% Load to 100% Load 4,5,6 01,02 400 mV pk 03,04 1000 VOUTStep Load Transient Recovery 11/ TTLOA
48、D50% Load to 100% Load 4,5,6 All 500 s VOUTStep Line Transient 4/ 10/ VTLINEVIN= 16 V dc to 40 V dc 4,5,6 01,02 600 mV pk 03,04 1200 VOUTStep Line Transient Recovery 10/ 11/ TTLINEVIN= 16 V dc to 40 V dc 4,5,6 All 500 s Start Up Overshoot VtonOSVIN= 0 V dc to 28 V dc 4,5,6 01 15 mV pk 02 25 03,04 50 Start Up Delay 11/ TonDVIN= 0 V dc to 28 V dc 4,5,6 All 20 ms See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permi
