1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline Y. Delete device class M references. Delete footnote 6/ and add two footnotes under paragraph 1.3. Make corrections to dimensions A, D, E, e, and L to case X as specified under figure 1. - ro 13-06-13 C. SAFFLE REV SHEET REV A A
2、A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritim
3、e.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, SYNCHRONOUS BUCK REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 12-05-23 AMSC N/A
4、 REVISION LEVEL A SIZE A CAGE CODE 67268 5962-12202 SHEET 1 OF 34 DSCC FORM 2233 APR 97 5962-E366-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVIS
5、ION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I
6、dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 12202 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designat
7、or Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(
8、s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 ISL70002SEH Synchronous buck regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device
9、 requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 64 Quad flat pack Y See figure 1 64 Quad flat
10、pack with heat sink 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME COLUMBUS, OHIO 4
11、3218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ AVDD AGND 0.3 V to AGND + 6.2 V DVDD DGND 0.3 V to DGND + 6.2 V LXx, PVINx PGNDx 0.3 V to PGNDx + 6.2 V 3/ AVDD AGND, DVDD DGND PVINx PGNDx 0.3 V Signal pins AGND 0.3 V to AVDD + 0.3 V 4/ Digital control pin
12、s . DGND 0. 3 V to DVDD + 0.3 V 5/ PGOOD . DGND 0.3 V to DGND + 6.2 V Soft start (SS) DGND 0.3 V to DGND + 2.5 V Power dissipation (PD) : Case outline X: TA = +25C 3.67 W TA = +125C . 0.73 W TC = +25C 83.3 W TC = +125C 16.6 W Case outline Y: TA = +25C 7.34 W TA = +125C . 1.46 W TC = +25C 178.5 W TC
13、= +125C 35.6 W Operating junction temperature range (TJ) -55C to +150C Lead temperature (soldering, 10 seconds) +260C Storage temperature range -65C to +150C Thermal resistance, junction-to-case (JC) : Case outline X . 1.5C/W 6/ Case outline Y . 0.7C/W 7/ Thermal resistance, junction-to-ambient (JA)
14、 : Case outline X . 34C/W 8/ Case outline Y . 17C/W 9/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Absolute maximum ratings assume operation in a heavy ion environme
15、nt. 2/ Unless otherwise specified, VIN= AVDD = DVDD = PVINx = EN = FSEL = M/S = SCO = SC1 = 3 V to 5.5 V and GND = AGND = DGND = PGNDx = ISHx = ISHCOM = ISHEN = ISHREFx = ISHSL = TDI = TD0 = TPGM = 0 V. 3/ The 6.2 V absolute maximum rating must be met for a 20 MHz bandwidth limited observation at th
16、e device pins. In addition, for a 600 MHz bandwidth limited observation, the peak transient voltage on PVINx (measured to PGNDx) must be less than 7.1 V with a duration above 6.2 V of less than 10 ns, and the peak transient voltage on LXx (measured to PGNDx) must be less than 7.9 V with a duration a
17、bove 6.2 V of less than 10 ns. 4/ EN, FB, ISHx, ISHREFx, OCx, OCSSx, PORSEL, and REF pins. 5/ FSEL, GND, ISHCOM, ISEN, ISHEN, ISHRSL, M/S, SYNC, SC0, SC1, TDI, TDO, and TPGM pins. 6/ For JC, the case temperature location is the center of the package underside. 7/ For JC, the case temperature locatio
18、n is the center of the exposed metal heatsink on the package underside. 8/ JAis measured in free air with the component mounted on a high effective thermal conductivity test board. 9/ JAis measured in free air with the component mounted on a high effective thermal conductivity test board with direct
19、 attach features. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. 2/
20、AVDD AGND + 3 V to 5.5 V DVDD DGND + 3 V to 5.5 V PVINx PGNDx + 3 V to 5.5 V AVDD AGND, DVDD DGND PVINx PGNDx 0.1 V Signal pins . AGND to AVDD 4/ Digital control pins . DGND to DVDD 5/ REF, SS Internally set GND, TDI, TDO, TPGM . DGND ILXx ( TJ +150C ) 0 A to 1.2 A Ambient operating temperature rang
21、e (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100 krads(Si) 10/ Maximum total dose available (dose rate 0.01 rads(Si)/s) . 50 krads(Si) 10/ Single event phenomenon (SEP): Destructive single event effects (SEE): No SEL occurs at effective
22、linear energy transfer (LET) (see 4.4.4.4) 86 MeV/(mg/cm2) 11/ No SEB observed at effective linear energy transfer (LET) (fluence = 2.4 x 107ions/cm2) 86 MeV/(mg/cm2) 11/ Nondestructive single event effects (SEE): No SET observed at effective LET (LX pulse perturbation 1, at output current 14 A at 1
23、.0 V) 86 MeV/(mg/cm2) 11/ Single event functional interrupt (SEFI) configured as current share master and slave mode. No SEFI observed at surface LET (VIN= 5.5 V, cross-section = 3.03 x 10-8 cm2) 43 MeV/(mg/cm2)11/ No SEFI observed at surface LET (VIN= 3.0 V, cross-section = 2.26 x 10-8 cm2) . 43 Me
24、V/(mg/cm2)11/ _ 10/ The device type 01 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 11/ Limits are ch
25、aracterized at initial qualification and after any design or process changes which may affect the SEP/SEE characteristics but, are not production tested unless specified by the customer through the purchase order or contract. For more information on destructive SEE (SEB/SEGR) test results, customers
26、 are requested to contact manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUM
27、ENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFE
28、NSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List
29、 of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) JEDEC Solid State Technology
30、 Association EIA/JEDEC 51-5 Extension of Thermal Conductivity Test Board Standards for Packages with Direct Thermal Attachment Mechanisms EIA/JEDEC 51-7 High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages (Applications for copies should be addressed to the JEDEC Office,
31、3103 North 10th Street, Suite 240-S, Arlington, VA 22201-2107 or online at http:/www.jedec.org) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the docume
32、nts cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM Internati
33、onal, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable la
34、ws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234
35、APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form,
36、 fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device
37、classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circ
38、uit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specif
39、ied herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA
40、. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manu
41、facturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes
42、Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of co
43、mpliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance a
44、s required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12202 DLA LAND AND MARITIME C
45、OLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Power supply section. Operating supply current IOP1 VIN= 5
46、.5 V 1,2,3 01 105 mA (current share disabled) VIN= 3.6 V 65 Standby supply current (current share disabled) ISBY1 VIN= 5.5 V, EN = GND, ISHEN = GND 1,2,3 01 6 mA VIN= 3.6 V, EN = GND, ISHEN = GND 4 Operating supply current (current share enabled, current share master) IOP2 VIN= ISHEN = 5.5 V, ISHCOM
47、 = open circuit 1,2,3 01 120 mA Operating supply current (current share enabled, current share slave) IOP3 VIN= ISHEN = ISHSL = 5.5 V, ISHCOM pulled to VINwith 1 k, M/S = GND, ISHx = ISHREFx = -100 A, SYNC = external 1 MHz clock 1,2,3 01 120 mA Standby supply current (current share enabled, current
48、share slave ISBY2 VIN= ISHEN = ISHSL = 5.5 V, EN = M/S = GND, SYNC = external 1 MHz clock 1,2,3 01 7 mA VIN= ISHEN = ISHSL = 5.5 V, M/S = GND, SYNC external 1 MHz clock, ISHCOM = GND 11 Output voltage and current section Reference voltage VREF1,2,3 01 0.594 0.606 V M,D,P,L,R 1 0.594 0.604 Output voltage tolerance 3/ 4/ VOUTVOUT= 0.8 V to 2.5 V for VIN= 4.5 V to 5.5 V, 1,2,3 01 -2 2 % VOUT= 0.8 V to 2.5 V for VIN= 3 V to 3.6 V, IOUT= 0 A to 12 A -2 2 Error amp input offset voltage VOSVIN= 5.5 V, VREF= 600 mV,
