DLA SMD-5962-86805 REV F-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 64K X 16 UV EPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体64X 16比特紫外线扩展可编程序只读存储器 数字主体存储器微型电路》.pdf

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1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added four device types and updated format. Added two vendors CAGE 1FN41 and 34649. 91-03-27 M. A. Frye B Changes in accordance with NOR 5962-R212-92. 92-05-15 M. A. Frye C Changes in accordance with NOR 5962-R301-92. 92-09-05 M. A. Frye D Changes

2、 in accordance with NOR 5962-R227-94. 94-07-05 M. A. Frye E Updated format to include QML vendor paragraphs. ksr 00-07-24 Raymond Monnin F Boilerplate update, part of 5 year review. ksr 06-05-31 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN CHANGED REV SHET REV SHET REV STATUS REV

3、F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

4、APPROVED BY Michael A Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 26 MAY89 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-86805 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E451-06 Provided by IHSNo

5、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for

6、MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-86805 01 Q A Drawing number Device type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2

7、.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 64K x 16-bit UVEPROM 300 ns 02 64K x 16-bit UVEPROM 250 ns 03 64K x 16-bit UVEPROM 200 ns 04 64K x 16-bit UVEPROM 170 ns 05 64K x 16-bit UVEPROM 150 ns

8、 06 64K x 16-bit UVEPROM 120 ns 07 64K x 16-bit UVEPROM 90 ns 08 64K x 16-bit UVEPROM 70 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 dual-in-line package 2/ X

9、 CQCC1-N44 44 square chip carrier package 2/ 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Storage temperature range - -65C to +150C All input or output voltage with respect to ground - -0.6 V dc to VCC+0.5 V dc Voltage on pin A9with r

10、espect to ground - -0.6 V dc to +13.5 V dc Power dissipation (PD) 3/ - 330 mW Lead temperature (soldering, 10 seconds)- +300C Thermal resistance, junction-to-case (JC) - See MIL-STD-1835 Junction temperature (TJ) 4/ - +150C Data retention- 10 years, minimum Endurance- 50 cycles byte, minimum 1.4 Rec

11、ommended operating conditions. Case operating temperature range (TC) - -55C to +125C Supply voltage range (VCC) - +4.5 V dc to +5.5 V dc 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MI

12、L-HDBK-103. 2/ Lid shall be transparent to permit ultraviolet light erasure. 3/ Must withstand the added PDdue to short-circuit test; e.g., IOS. 4/ Maximum junction temperature may be increased to +175C during burn-in and steady-state life. Provided by IHSNot for ResaleNo reproduction or networking

13、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification,

14、standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specificatio

15、n for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies

16、 of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this

17、 drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accord

18、ance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38

19、535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications sha

20、ll not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The de

21、sign, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s)

22、. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2. When required in groups A, B, or C inspection (see 4.3), the devices shall be programmed by the manufacturer prior to test in a checkerboard or

23、similar pattern (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of bits programmed. 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not part of this drawin

24、g. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the sub

25、groups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 RE

26、VISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not f

27、easible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be r

28、eplaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.

29、6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as

30、required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquirin

31、g activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Processing EPROMs. All testing requirements and quality assurance provisions herein shall be satisfied b

32、y the manufacturer prior to delivery. 3.10.1 Erasure of EPROMs. When specified, devices shall be erased in accordance with the procedure and characteristics specified in 4.4 herein. 3.10.2 Programmability of EPROMs. When specified, devices shall be programmed to the specified pattern using the proce

33、dures and characteristics specified in 4.5 herein. 3.10.3 Verification of erasure and/or programmability of EPROMs. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7)

34、 to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, ap

35、pendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test (method 1015 of MIL-STD-883). (1) Test condition D or E. The test c

36、ircuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specif

37、ied in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduc

38、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +12

39、5C VSS= 0 V; 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Min Max Unit Input leakage current ILIVIN= 0 V to 5.5 V 1, 2, 3 All -5 +5 A Output leakage current ILO1/ VOUT= 0 V to 5.5 V 1, 2, 3 All -10 +10 A 01-06, 07 60 Operating current ICC1VCC= VPP= 5.5 V CE = OE = VIL00-

40、15= 0 mA f = 1/tAVQV(maximum) 1, 2, 3 08 90 mA 01-06 1 Standby current (TTL inputs) ICC2VCC= 5.5 V CE = VIH1, 2, 3 07-08 20 mA 01-06 120 A Standby current (CMOS inputs) ICC3VCC= 5.5 V CE = VCC0.3 V 1, 2, 3 07-08 10 mA VPPsupply current (read) IPPVPP= 5.5 V 1, 2, 3 All 100 A Input low voltage (TTL) V

41、IL2/ 1, 2, 3 All -0.1 3/ 0.8 V Input high voltage (TTL) VIH2/ 1, 2, 3 All 2.0 VCC+0.5 3/ V Output low voltage VOLIOL= 2.1 mA VIL= 0.8 V, VIH= 2.0 V 1, 2, 3 All 0.45 V Output high voltage VOHIOH= -400 A VIH= 2.0 V, VIL= 0.8 V 1, 2, 3 All 2.4 V Output short-circuit IOS3/ VO= 0 V 1, 2, 3 All -200 +200

42、mA Input capacitance CIN4/ 5/ VIN= 0 V, TC= +25C f = 1 MHz See 4.3.1c 4 All 25 pF Output capacitance COUT4/ 5/ VOUT= 0 V, TC= +25C f = 1 MHz See 4.3.1c 4 All 25 pF Functional tests See 4.3.1e 7, 8 All See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted

43、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C VSS= 0 V; 4.5 V VCC 5.5 V

44、 unless otherwise specified Group A subgroups Device types Min Max Unit 01 300 02 250 03 200 04 170 05 150 06 120 07 90 Address to output delay tAVQVCE = OE = VIL6/ See figures 3 and 4 as applicable 9, 10, 11 08 70 ns 01 300 02 250 03 200 04 170 05 150 06 120 07 90 CE to output delay tELQVOE = VIL6/

45、 See figures 3 and 4 as applicable 9, 10, 11 08 70 ns 01 120 02 100 03 75 04,05 65 06 50 OE to output delay tOLQVCE = VIL6/ See figures 3 and 4 as applicable 9, 10, 11 07, 08 30 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

46、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86805 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C VSS= 0 V; 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device types Min Max Unit 01 02 60 03 04,05, 06 50 07 20 CE and OE high to output float

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