DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf

上传人:wealthynice100 文档编号:699067 上传时间:2019-01-01 格式:PDF 页数:12 大小:418.10KB
下载 相关 举报
DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf_第1页
第1页 / 共12页
DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf_第2页
第2页 / 共12页
DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf_第3页
第3页 / 共12页
DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf_第4页
第4页 / 共12页
DLA SMD-5962-87653 REV A-1991 MICROCIRCUIT MICROPROCESSOR COMPATIBLE REAL-TIME CLOCK CMOS MONOLITHIC SILICON《硅单块 互补金属氧化物半导体 可兼容时间钟 微处理器微型电路》.pdf_第5页
第5页 / 共12页
点击查看更多>>
资源描述

1、- j SND-59b-A7b53 REV A 59 999999b 0006283 T i I L Public reporting burden for this collection is estimated to average 1 hour per rssponse, including the tim for reviewing instructions, searching existing data sources, gathering and maintaintng thr data nordad, and cmpleting and rrvirwing thr collec

2、tion of information. Send cmnts regarding this burden estimate or any othrr asprot of this collrction of information, including suggestions far reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 12P4, Arl

3、ington, VA 22202-4302, and to the Office of Information and Reaul atorv Affair s, Office of Manaamnt and Budaet, Washinaton. DC 2 0503. 1, ORIGINATOR NAME AND ADDRESS 2. CAGE CODE 3. NOR NO, Defense Electronics Supply Center Dayton, Ohio 45444-5277 6, TITLE OF DOCUMENT REVISION LETTER MICROCIRCUIT,

4、MICROPROCESSOR, COMPATIBLE REAL-TIME CLOCK, CMOS MNOLITHiC SIL ICON 8. ECP NO. 9, CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES 10. DESCRIPTION OF REVISION Sheet 1: Revisions ltr column; add “A“ Revisions desorltion column; add “Changes in accordance with NOR 5962-R007-92 . Revisions date colt

5、nnn; add “91-10-21“. Change Output High Voltage (V,) from: I, = 400 KA Change Standby Current from : Vbackup Vcc-0.3V to : Vbackup = Vc,-3,0V Add the following test to Table I: Sheet 4: Table I to: IaH 0 -400 CrA Test SMol Condi ti ons Group A Device Limits uni t -55OC 5 T, 5 +125C subgroups type 4.

6、5 v 5 v, 5 5.5 v unless otherwise spscfied Min Max Alarm Interrupt fa:orc 0 IMHZ 1, 2, 3 Test Jf v, 0 ov i/ Ths alarm interrupt kt shallverify that while the davice is Set-up in the alarm inkrrupt distribution is unllmted. DESC FORM 193 MAY 86 1. . 1. Provided by IHSNot for ResaleNo reproduction or

7、networking permitted without license from IHS-,-,-SMD-5962-87653 REV A 59 9999996 0006285 3 m SIZ COBE IDENT. NO. A 67268 . MILITARY DRAWING . - 1, SCOPE This drawing describes device re UirMentS for class B microcipcuic in accordance with ,k! o%:ST-883, “Provicons for the use 6 9 MIL-STD-883 in c6n

8、juncGion with compl ant non-JAN evices“ . 1.2 Part numbex, The complete part number shall be as shown in he fdTowing example: DWG NO. 5962-87653 _. X 7- I I I iid finish pet 5962-87653 I I I I I I . I ,_ - I- -_._ Drad ng number Device t pe Case outline l (1.2.11 (1.2.2) MIL-Ma38510 1.2.1 Device typ

9、e*. The device type shall identify the circuit function as follows: Device: typ Generic number f.wui-t f,unction o1 ICI47170 Microprocessor compatible real-time clock 1.2.2 Case outline. The case outlitre shall be as designated in appendix C of MIL-M-38510, and as to11 ows : out1 !ne 1 etter J Cace.

10、 out1 i ne D-3 (24-lead, 1/2“ x 1-1/4“), dual-in-line package 1.3 Absolute maximum ratings. supply voltage (VC ) - - - L - - - z - - c - - = - i Power dissipation b) - - - - = - - = - - - - - - - - - - - Input voltage (any terminal) - - - - - - - - - - - - - - - Storage temperature range CTs) - - -

11、- = = - - - - - - - - - Thermal reci stance, junction-tn4ase (BJc): Lead temperature (caldering, IO secoridsl - - - - = i - - CasS-oirp-rsr-= 1 4 Recomnended operating condi ti ons. Case operating gemperatwe range (TC) - - - - - - - - - a - supply voltage (VCc) - - - - - - . - - * 4 - - - - t8.0 V d

12、c 500 mnw i/ V +Oe3 Y de to VSS -0.3 V dc #ide %a +15oc See MIL-FI-38510, appendix C +300 G . . %. -. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-87653 REV A 59 E 9999976 0006286 5 E B I i -B 2. APPLICABLE DOCUMENTS 2.1 Government specif

13、ication and standard. Unless otherwise specified, the following specification ind standard, of the issue listed in that issue of the Department of Defense Index of Specifications ind Standards specified in the solicitation, form a part of this drawing to the extent Specified herein. SPECIFICATION MI

14、LITARY MIL-M-38510 - Microcircuits, General Spec STANDARD MILITARY fication for. MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with spec icquisition functions should be obtained from the contracting a

15、ctivity or as directed by the ;ontracting activity. 1 fic 2.2 Order of recedence. 3. REQUIREMENTS 3.1 Item requirements. The individual itemrequirements shall be in accordance with 1.2.1 of IIL-STD- IS specif% hSreii. In the event of a conflict between the text of this drawing and the references cit

16、edherein, the text of this drawing chal 1 take precedence. “ rov sions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and 3.2 Design, construction, and physical dimensions. The design, construction, and physical limensions shall be as Specified in MIL- and herein. 3.2.1 Te

17、rminal connections. The terminal connections shall be as specified on figure 1. 3.2.2 Functional diagram. lhe functional diagram shall be as specified on figure 2, 3.2.3 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherw

18、ise specified, the electrical perfomance :haracteristics are as specified in table I and apply over the full reconmended case operating iemperature range. 3.4 Markin . Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be larked de part number listed in 1.2 herein. In a

19、ddition, the manufacturers part number may also ,e marked as listed in 6.4 herein. 3.5 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in wder to be listed as an approved source of supply in 6.4. The certificate of compliance submitted to )ESC-ECS prior t

20、o listing as an approved source of su ply shall state that the manufacturers product ieets the requirements of MIL-STD-883 (see 3.1 herein! and the requirements herein. ierein) shall be provided with each lot of microcircuits delivered to this drawing. 3.6 Certificate of conformance. A certificate o

21、f conformance as required in MIL-STD-883 (see 3.1 3.7 Notification of change. Notification of change to DESC-ECS shall be required in accordance with IIL-STD-83 ( see 3.1 herei n) . SIZE CODLIRENT NO. DWGNO. MILITARY DRAWING A 67268 5962-87653 DEFENSE ELECTRONICS SUPPLY CENTER PAGE 3 DAYTON, OHIO RE

22、V DESC FORM l93A FEB 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-87b53 REV A 59 9999996 O006287 7 SIZE MILITARY DRAWING A TABLE I. 1 ectrical performance characteristics. -55C TC 5 9125OC I I Cond tions i Group A I I I I I VBACKUP = C

23、c I I (unless otherwise specified) I Limits I Unit I I I 4.5 V dc-5 VCC 5.5 V dc Isubgroupsl-I I Min I Max I III I I I I 1 III IiI Test I Symbol I 1,2,3 I 1.9 1 5.5 I V CODE IDENT. NO. DWG NO. 67268 5962-87653 I FOSC = 32 kH I I I I I Vcc Supply range DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO F

24、osc = 1.2 MHz i i REV PAGE 4 I 1 1 I 1 I I IFosc = 32 kHz I I I I Aff chip U0 to IFosc = 1.2 MHzI I I I I I I I 1 Operating supply current I ICc1 I FOSC = 32 kHz IRead/write at I 1 100 Hz 1 I I IRead/wri te at I I I I 1 MHr I I I I Standby current 1 ISTBY1 I VCC = VSS, I I IV VBACFP;, I I 1 i vcc Ic

25、c2 i I ISTBY2 I I I VCC = 5.0 V I I Input 1 ow vol tage (except oscillator input) I 1 VIL I I I I Input high voltage 1 VIH (except oscillator input) I I I I IOL = 1.6 id I I I Output 1 ow vol tage I VOL (except oscillator output) I 1 I I Output high voltage I vOH (except INTERRUPT and I osci1 lator

26、output) I I I YIN = VCC Or VSS I IoH = 400 pA Input leakage current I IIL I I 3-State 1 eakage current I IOL i (outputs Do through D7) I I I I I Backup battery voltage 1 VBACKUP FOSC = 32 kHz I I I I I I INTERRUPT leakage current i IOLINT I Vg = Vcc or Vss i I I i 2.6 i 5.5 i III 1- I 140 I pA III I

27、11 I I 200 I III III 1- I I 1.2 I mA III 1-1 I I 2.0 I III 1- IiI I 2.8 I 1 III 1-1 IiI V t t o*8 I I I I I 2.5 I I III 1-10 It10 I UA III 1-1 f+ 1-10 1+10 I III III 1- i 1.9 iv c i v I I-i.5 I 1- I I 10 I NA III I I 10 I pF I I 10 I pF III I I I See 4.3.1 I I See 4.3.1 I I4 I I I. Input capacitance

28、 Output capacitance j Co i e- l, Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SID-5762-87653 REV A 59 9999996 0006288 9 1 TABLE 1. Electrical performance characteristics. I I I I on t ons I I I I 4.5 V dc- 6, 5.5 V dc Isubgroupsl-I I I I I Min I M

29、ax I III “BAC UP = %c I I (unless otkerwise specified) I I I I I I I m I I 350 I I -55CC Ti +125C I Group A I Limits I Unit Test I/O capacitance I CI/O I See 4.3.1 READ to Data valid I 9,10,11 I I I I 25D I “B I cL i5o pF, VIL = 0.4 v, I VIH = 3.20 V, see figure 3 III ADDRESS valid to DATA valid tAC

30、C i I I DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO I I REV PAGE 5 I ADDRESS HOLD time after I tAR 1 READ I 1 READ high time i tRH i I I I ADDRESS valid to WRITE i tAD i strobe I I ADDRESS hold time Por tWA i WRITE I I WRITE pulse width low I tWL i WRITE pulse width high 1 tWH I I I I time I I I

31、DATA IN to WRITE Set up I DATA IN hold time after WD i WRITE I I WRITE cycle time I tcvc I ALE width I I 450 I I III m I I 100 I III m I loo I I l-77 III m I 200 I I III m I 100 I I III m I501 I III m I 125 I I III m I 325 I I III r-l-r I 125 I I III m III L-l-7 III III I401 1 l-47 I I ADDRESS hold

32、time after ALEI ti I I I I I DESC FORM 193A FEB 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-87653 REV A 59 m 9999996 O006289 O m - silk MILITARY DRAWING A 3 . . CQDE-IDENT.-NQ. DWZNO.- 5962-87659 617268 Top view DEFENSEELECTRONICCCUP

33、PLYCENTER DAYTON, OHIO FIGURE 1, Terminal connectians. . _. - REV PAGE 6 - INT LNT SQURCE DATA Do- 07 1. ,. - - .- - . - .- _. FIGURE 2. Functional diagram. 6- Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- I - SMD-5762-87653 REV A 59 9999996 O0062

34、90 7 i SIZE CODE 1-DENT. NO. MILITARY DRAWING A 67268 READ CYCLE TIMING FOR NON-MULTIPLEXED BUS (ALE = VlH,wR=VlH) DWG NO. 5962-87653 I . ADDRESS VALID, LOW DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO - WRITE CYCLE TIMING FOR NON-MULTIPLEXED BUS (ALEVIH, RD= VIH I I REV PAGE 7 / ADDRESS VALID,E L

35、OW 4 / tcY c tWL - WR I / - - - - - Do- D7 . .- FIGURE 3. Switching time waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-87653 REV A 57 7999996 O006273 7 * SIZE CODE IDENT. NO. MILITARY DRAWING A 67268 READ CYCLE TIMING FOR MULTIP

36、LEXED BUS (WR= jH) AADD fi u- ADDRESS VALID,E LOW DWG NO. 5962-87653 ALE m DAYTON, OHIO REV WRITE CYCLE TIMING FOR MULTIPLEXED BUS (RD VIH) PAGE 8 WR tWL-C, / NOTE: The Ao to A4 address inputs may be connected to the Do to D4 data a multiplexed bus is used. FIGURE 3. Switching time waveforms. Ines w

37、hen I I DESC FORM 193A FEE 86 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ISMD-5962-87653 REV A 59 9999996 O006292 O , I- 3.8 Verification and review, DESC, DESCs agent, and the acquiring activity retain the option to eview the manufacturers faci

38、lity and applicable required documentation. Offshore documentation shall ,e made available onshore at the option of the reviewer. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with section I of MIL-M-38510 to the extenf specifi

39、ed in MIL-STD-883 (see 3.1 herein). 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be :onducted on all devices prior to quality conformance inspection. The following additional criteria ;hall apply: a. Burn-in test (method 1015 of MIL-STD-883). (1) Test co

40、ndition A, B, C, or D using the circuit submitted with the certificate of compliance (see 3.5 herei n) . (2) TA = +125OC, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the

41、discretion of the manufacturer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with nethod 5005 of MIL - STD MM 3 including groups A, B, C, and D inspections. The following additional :riteria shall apply. 4.3.1 Group A inspection. a. Tests shall be as spec

42、ified in table II herein. b. Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 (CI, CO, and CI o measurements) shall be measured only for the initial test and after process or desigb changes which may affect capacitance. 4.3.2 Groups C and D inspections.

43、 a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test (method 1005 of MIL-STD-883) conditions: (1) Test condition A, B, C, or D using the circuit submitted with the certificate of compliance (see 3.5 herei n) (2) TA = +125“C, minimum. (3) Test durati

44、on: 1,000 hours, except as permitted by appendix B of MIL-M-38510 and method 1005 Of MIL-STD-883. SIZE CCinF ILiEhLT. NO. DWG NO. MILITARY DRAWING A 67268 5962-87653 9 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO REV PAGE DESC FORM 193A FEE 86 Provided by IHSNot for ResaleNo reproduction or networ

45、king permitted without license from IHS-,-,-. ._ TABLE II. Electrical test requirements. i MIL-STD-ON test requirements i Subgroups i I 1 (per method i I I 5905, table i) I 1 I Interim electrical parameters 1. (method 5004) , IFinal electrical test parameters I I*, 2, 3, 9 I I (method 5004) I f I I

46、-. i Group A test requirements i i, 2, 3, 9, i I 10, 11 I .I _ 1 (method 505IA . I roups C and D end-point 1, 2, 3 lelectrical parameters I I I I (method 5005) Additional electrical subgroups 1 I far grwp C periodic I I I 1 I inspections *PDA applies to subgroup 1. . - - - I. . _- ._ -I 5. PACKAGING

47、 5.1 Packaging . requl , . . . . - rements, - . The requirements for packaging shall be in accardance with MIL-M-38510. 6, NOTES 6.1 ,Intended use, Microcircuits conforming to this drawing are intended far use when military ;pecifici$tJons do bot exist and qualified military devices that will perfwm

48、 the required function are iot avallable for OM application. When a military specification exists and the product covered by ;his drawing has been qualified for listing on QPL-38510, the device specified herein will be nactiwated and will not be use0 for new design, The QPL-3851Q product shall be the preferred item for ill applications. 6.2 Re laceabilit (i Microcircuits cwered by this drawing will replace the same generic device :overe 6$-4! y a contractor-prepared specification or drawing. 6.3 Comnents. Comnents on this drawing should be directed to DESC-ES, Dayton, Ohi

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1