DLA SMD-5962-87759 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-87759 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87759 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(26页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add B, S, Q, and V test limits. Change to one part-one part number format. Add ground bounce and latch-up immunity tests. Add 10.1, substitution statement. Changes to table I. Editorial changes throughout. - JAK 92-07-09 Monica L. Poelking B Chan
2、ge delay time for tPLZand tPHZfor device class M. Editorial changes throughout. - JAK 99-02-02 Monica L. Poelking C Add device type 03. Add vendor CAGE F8859. Add case outlines X and Z. Make changes to radiation features. Update boilerplate to MIL-PRF-38535 requirements. - JAK 02-12-17 Thomas M. Hes
3、s D Add radiation features for device type 03 in section 1.5. Update the boilerplate to include radiation hardness assurance for device type 03. Editorial changes throughout. - TVN 05-05-20 Thomas M. Hess E Update radiation features in section 1.5. Add SEP table IB and paragraph 4.4.5.2. Update the
4、boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 11-09-21 Thomas M. Hess F Change case outline X (flat pack) dimension A and add dimensions E2 and E3 to figure 1. - MAA 13-07-29 Thomas M. Hess REV SHEET REV F F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS OF SHEE
5、TS REV F F F F F F F F F F F F F F SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jim Nicklaus DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTM
6、ENT OF DEFENSE AMSC N/A CHECKED BY D. A. DiCenzo APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-08-10 REVISION LEVEL F SIZE A CAGE CODE 67268 5
7、962-87759 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E458-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87759 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97
8、1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes B, Q, and M) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN
9、). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 87759 01 S R A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) desig
10、nator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes B, S, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe
11、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT240 Octal buffer/line driver with inverting three-state
12、outputs, TTL compatible inputs 02 54ACT11240 Octal buffer/line driver with inverting three-state outputs, TTL compatible inputs 03 54ACT240 Octal buffer/line driver with inverting three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter
13、 identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A B, S, Q, or V Certification and qualificatio
14、n to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack L GDIP3-T24 or CDIP4-T24 24 Dual-in-line X See
15、figure 1 20 Flat pack Z GDFP1-G20 20 Flat pack with gullwing 2 CQCC1-N20 20 Square leadless chip carrier 3 CQCC1-N28 28 Square leadless chip carrier Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME C
16、OLUMBUS, OHIO 43218-3990 SIZE A 5962-87759 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range
17、 (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current (IOUT) . 50 mA DC VCCor GND current (ICC, IGND) . 200 mA 4/ Maximum power dissipation (PD) . 500
18、 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 175C 1.4 Recommended operating conditions. 2/ 3/ Su
19、pply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage range (VOUT). 0.0 V dc to VCCMinimum high level input voltage (VIH) . 2.0 V at VCC= 4.5 V and 5.5 V Maximum low level input voltage (VIL) 0.8 V at VCC= 4.5 V and 5.5 V Maximum high level output cu
20、rrent (IOH) -24 mA Maximum low level output current (IOL) +24 mA Maximum input rise or fall time rate (t/v): VCC= 4.5 V 10 ns/V VCC= 5.5 V 8 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s
21、) 100 krads (Si) Device type 03: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single event phenomenon (SEP): For device type 01: No Single event latch-up (SEL) occurs at effective LET (see 4.4.5.2) 100 MeV-cm2/mg For device type 03: No Single event latch-up (SEL) occu
22、rs at effective LET (see 4.4.5.2) 93 MeV-cm2/mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature shall not be exceeded except for allowable
23、 short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4
24、/ For packages with multiple VCCor GND pins, this value represents the maximum total current flowing into or out of all VCCor GND pins. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO
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