1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline 2 for device types 01 and 02. Update format. Editorial changes throughout. 89-11-07 M. A. Frye B Changes to large-signal voltage gain test and to the output voltage swing test. Changes IAW NOR 5962-R193-93. 93-08-26 M. A. Frye C
2、Add case outline K. Change boilerplate to add one-part part numbers. Add delta test limits. Redrawn. 96-11-25 R. Monnin D Add radiation hardness requirements. Update boilerplate. -rrp 98-06-19 R. Monnin E Change to the slew rate test condition AVCLin table I. -rrp 00-10-04 R. MonninF Add case outlin
3、e D. Remove radiation exposure circuit. Changes made to 1.2.4, 1.3, 3.2.3, figure 1, and table IIA. Update boilerplate to reflect current requirements. -rrp 03-03-19 R. Monnin G Update drawing to current requirements. Deleted unused group E boilerplate paragraphs. rrp 11-04-06 C. Saffle H Add device
4、 types 03 and 04 tested at low dose rate. Make changes to 1.2.2, 1.5, Table I, figure 1, Table IIB, 4.4.4.1. - ro 11-11-16 C. Saffle THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PRE
5、PARED BY Gary Zahn DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Ray Monnin APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RA
6、DIATION HARDENED, LOW NOISE, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-08-18 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-88565 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E524-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license
7、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space
8、 application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. F
9、or device classes M and Q: 5962 - 88565 01 C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 88565 01 V C A Federal stock class designator RHA designator (see 1.2.1) Devic
10、e type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA ma
11、rked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 OP-470A Ve
12、ry low noise, quad, operational amplifier 02 OP-471A High speed, low noise, quad, operational amplifier 03 OP-470A Very low noise, quad, operational amplifier 04 OP-471A High speed, low noise, quad, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter i
13、dentifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentatio
14、n M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license f
15、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package
16、style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 3 CQCC1-N28 28 Square leadless chip carrier K GDFP2-F24 or CDFP3-F24 24 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q
17、and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) . 18 V dc Differential input voltage 1 V dc 2/ Differential input current 25 mA 2/ Input voltage Supply voltage Output short circuit duration . Continuous Storage temperature range . -65C to
18、+150C Lead temperature (soldering, 60 seconds) +300C Power dissipation (PD): Cases C and 2 . 800 mW Case D . 550 mW Case 3 500 mW Case K . 440 mW Maximum junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Cases C a
19、nd 2 . 100C/W Case D . 140C/W Case 3 110C/W Case K . 69C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C Supply voltage (VCC) . 15 V 1.5 Radiation features. Device types 01 and 02: Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100 krads
20、(Si) 3/ Device types 03 and 04: Maximum total dose available (dose rate 10 mrads(Si)/s) 50 krads (Si) 4/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The inputs are
21、protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise performance. If the differential input voltage exceeds 1 V, the input current should be limited to 25 mA. 3/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demons
22、trate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ For device type 03 and 04, radiation end point limits for the noted parameters are guaranteed for the conditions spe
23、cified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICA
24、BLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMEN
25、T OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-1
26、03 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 O
27、rder of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1
28、 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as de
29、scribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif
30、ied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein . 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radia
31、tion exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unles
32、s otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups speci
33、fied in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limit
34、ations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-
35、38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction
36、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA+125C unless other
37、wise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIO1 01, 03 0.4 mV 2, 3 0.6 M,D,P,L,R 1 01 0.6 M,D,P,L 1 03 0.6 1 02, 04 0.8 2, 3 1.2 M,D,P,L,R 1 02 1.0 M,D,P,L 1 04 1.0 Input offset current IIOVCM= 0 V 1 All 10 nA 2, 3 20 M,D,P,L,R 1 01, 02 50 M,D,P,L 1 03, 04
38、50 Input bias current IIBVCM= 0 V 1 All 25 nA 2, 3 50 M,D,P,L,R 1 01, 02 500 M,D,P,L 1 03, 04 500 Input noise voltage EnfO= 1 Hz to 100 Hz, 3/ 7 01, 03 110 nV TA= +25C 02, 04 265 RMS Large-signal voltage gain AVSVO= 10 V, 4 01, 03 1000 V/mV RL= 10 k 5, 6 750 M,D,P,L,R 4 01 100 M,D,P,L 4 03 100 VO= 1
39、0 V, 3/ 4 01, 03 500 RL= 2 k 5, 6 400 VO= 10 V, 4 02, 04 500 RL= 10 k 5, 6 375 M,D,P,L,R 4 02 50 M,D,P,L 4 04 50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND A
40、ND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Large-signal voltage gain AVSVO= 10 V
41、, 3/ 4 02, 04 350 V/mV RL= 2 k 5, 6 250 Output voltage swing VOPRL = 2 k 3/ 4, 5, 6 All 12 V Supply current 4/ ISNo load 1, 2, 3 All 11 mA M,D,P,L,R 1 01, 02 11 M,D,P,L 1 03, 04 11 Slew rate SR AVCL= +21, RL= 10 k, 7 01, 03 1.4 V/s TA= +25C 3/ 02, 04 6.5 Common-mode rejection CMR VCM= IVR = 11 V 3/
42、5/ 1 01, 03 110 dB 2, 3 100 1 02, 04 105 2, 3 100 Power supply rejection ratio PSRR VCC= 4.5 V to 18 V 3/ 1 01, 03 1.8 V/V 2, 3 5.6 1 02, 04 5.6 2, 3 10 1/ Device types 01 and 02 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation. Device types 03 and 04 s
43、upplied to this drawing has been characterized through all levels M, D, P, L of irradiation. However, device types 01 and 02 is only tested at the “R” level and device types 03 and 04 is only tested at the “L” level. Pre and Post irradiation values are identical unless otherwise specified in Table I
44、. When performing post irradiation electrical measurements for any RHA level, TA= +25C. VCC= 15 V, RS= 50 . 2/ For device types 01 and 02, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parame
45、ters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A for device types 01 and 02 and condition D for device types 03 and 04. Device types 03 and 04, have been tested at low dose rate. 3/ This parameter is not tested post-irradiation. 4/ ISlimit equals the tot
46、al of all amplifiers. 5/ IVR is defined as the VCMrange used for the CMR test. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-88565 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DS
47、CC FORM 2234 APR 97 Device types 01, 02, and 03, 04 Case outlines C and D K 2 3 Terminal number Terminal symbol 1 OUT A OUT A NC NC 2 -IN A -IN A OUT A OUT A 3 +IN A NC -IN A -IN A 4 +VCCNC +IN A NC 5 +IN B +IN A NC NC 6 -IN B +VCC+VCC+IN A 7 OUT B +IN B NC NC 8 OUT C NC +IN B +VCC9 -IN C NC -IN B N
48、C 10 +IN C NC OUT B +IN B 11 -VCC-IN B NC NC 12 +IN D OUT B OUT C NC 13 -IN D OUT C -IN C -IN B 14 OUT D -IN C +IN C OUT B 15 - NC NC NC 16 - NC -VCCOUT C 17 - NC NC -IN C 18 - +IN C +IN D NC 19 - -VCC-IN D NC 20 - +IN D OUT D +IN C 21 - NC - NC 22 - NC - -VCC23 - -IN D - NC 24 - OUT D - +IN D 25 - - - NC 26 - - - NC 27 - - - -IN D 28 - - - OUT D NC = No connection. FIGURE 1. Terminal connections. P
