DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf

上传人:orderah291 文档编号:699511 上传时间:2019-01-01 格式:PDF 页数:24 大小:157.55KB
下载 相关 举报
DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf_第1页
第1页 / 共24页
DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf_第2页
第2页 / 共24页
DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf_第3页
第3页 / 共24页
DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf_第4页
第4页 / 共24页
DLA SMD-5962-89614 REV G-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT UVEPROM MONOLITHIC SILICON.pdf_第5页
第5页 / 共24页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED D Updated boilerplate. Added device types 13-16. glg 95 12 15 Michael Frye E Revision in accordance with NOR 5962-R069-99. glg 99 08 04 Raymond Monnin F Add devices 17 20. This revision addresses programming interchangeability issue as a result of

2、revision E, NOR 5962-R069-99. Figure 2, Truth table; will be modified to add a second truth table for devices 17 20. This change indicates devices which require VPPto be tied to VCC, from those devices which may be tied to either VILor VIHas was previously the requirement prior to revision E. ksr 03

3、 02 05 Raymond Monnin G Update to paragraphs, part of regular review cycle. ksr 09-02-18 Robert M. Heber REV SHET REV G G G G G SHEET 15 16 17 18 19 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Jamison STANDARD MICROCIRCUIT

4、 DRAWING CHECKED BY Raymond Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95 12 15 MICROCIRCUIT, MEMORY, DIGITAL,

5、CMOS, 128K X 8-BIT UVEPROM, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-89614 AMSC N/A REVISION LEVEL G SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E180-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-8961

6、4 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case out

7、lines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 89614 01 M X A | | | | | | | | | | | | | | |

8、| | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels an

9、d are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit functio

10、n as follows: Device type Generic number 1/ Circuit function Access time 01 (128K x 8) UVEPROM 300 ns 02 (128K x 8) UVEPROM 250 ns 03,17 (128K x 8) UVEPROM 200 ns 04,18 (128K x 8) UVEPROM 170 ns 05,10,19 (128K x 8) UVEPROM 150 ns 06,11,20 (128K x 8) UVEPROM 120 ns 07,12 (128K x 8) UVEPROM 90 ns 08,1

11、3 (128K x 8) UVEPROM 70 ns 09,14 (128K x 8) UVEPROM 55 ns 15 (128K x 8) UVEPROM 45 ns 16 (128K x 8) UVEPROM 35 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor

12、self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outl

13、ine letter Descriptive designator Terminals Package style 2/ X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CQCC2-N32 32 Rectangular leadless chip carrier _ 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the

14、 end of this document and will also be listed in QML-38535 and MIL-HDBK-103. 2/ Lid shall be transparent to permit ultraviolet light erasure. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89614 DEFENSE SUPP

15、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 3/ Storage temperature - -65C to +

16、150C All input or output voltage with respect to ground - -0.6 V dc to VCC+0.5 V dc Voltage on A9 with respect to ground - -0.6 V dc to +13.0 V dc VPPsupply voltage with respect to ground during programming (device types 01-12,17-20) - -0.6 V dc to +13.5 V dc (device types 13-16) - -0.5 V dc to +13.

17、0 V dc VCCsupply voltage with respect to ground (device types 01-12,17-20) -0.6 V dc to +7.0 V dc (device types 13-16) - -0.5 V dc to +7.0 V dc Power dissipation (PD) - 330 mW 4/ Lead temperature (soldering, 10 seconds) - +300C Thermal resistance, junction-to-case (JC): Case X, Y and Z - See MIL-STD

18、-1835 Junction temperature (TJ) - +150C 5/ Endurance - 50 cycles/byte, minimum Data retention - 10 years, minimum 1.4 Recommended operating conditions. Case operating temperature range (TC) - -55C to +125C Supply voltage range (VCC) - 4.5 V dc to 5.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government speci

19、fication, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF

20、-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit

21、 Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The fol

22、lowing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event

23、 Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) _ 3/ Stresses above the absolute maximum rating may cau

24、se permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ Must withstand the added PDdue to short circuit test; e.g., IOS. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening

25、conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234

26、 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications ar

27、e normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,

28、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-P

29、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, ap

30、pendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device cla

31、ss M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for u

32、nprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2 herein. When required, in screening (see 4.2 herein), or quality conformance inspection groups A, B, C, or D (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test in a

33、checkerboard or similar pattern (a minimum of 50 percent of the total number of bits programmed). 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not part of this document. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless other

34、wise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in t

35、able IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Processing EPROMs. All testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.5.1 Erasure of EPROMs. When specified, devices shall be erased in accordance w

36、ith the procedure and characteristics specified in 4.5 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89614 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM

37、 2234 APR 97 3.5.2 Programmability of EPROMs. When specified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in 4.6 herein. 3.5.3 Verification of erasure of programmability of EPROMs. When specified, devices shall be verified as either program

38、med to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot.

39、3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device.

40、For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.6.1 Certification/compliance mark. The certification mark for

41、 device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 list

42、ed manufacturer in order to supply to the requirements of this drawing (see 6.6 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitt

43、ed to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.8 Certificate

44、 of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.9 Notification of change for device class M. For device class M, noti

45、fication to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.10 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.11 Microcirc

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1