DLA SMD-5962-89765 REV E-2013 MICROCIRCUIT DIGITAL HIGH SPEED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device class V criteria. Editorial changes throughout. jak 99-11-05 Monica L. Poelking B Correct data limits in paragraph 1.3 and CINtest conditions in table I. Add case outline X. Add table III, delta limits. Editorial

2、 changes throughout. LTG 00-06-22 Monica L. Poelking C Correct table II. Update boilerplate to MIL-PRF- 38535 requirements jak. 02-01-25 Thomas M. Hess D Add JESD-7A in section 2.2 and paragraph 4.4.1c. Update the boilerplate to current MIL-PRF-38535 requirements. jak 07-12-17 Thomas M. Hess E Updat

3、e boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 13-05-16 Thomas M. Hess REV SHEET REV E SHEET 15 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher DLA LAND AND MARITIME COLUMBUS, OHIO 43218-39

4、90 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas J. Ricciuti APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 4-BIT BINARY FULL ADDER WITH FA

5、ST CARRY, MONOLITHIC SILICON DRAWING APPROVAL DATE 90-10-01 REVISION LEVEL E SIZE A CAGE CODE 67268 5962-89765 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E353-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

6、89765 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines a

7、nd lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device class M and Q: 5962 - 89765 01 E A Federal stock

8、 class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 - 89765 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (s

9、ee 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specif

10、ied RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC283 4-bit binary full adder with fast carry 1.2.3 Device cla

11、ss designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be mark

12、ed on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for

13、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89765 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and a

14、s follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A

15、 for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp current (IIK) . 20 mA Output clamp current (IOK) 20 mA Continuou

16、s output current . 25 mA Continuous current through VCCor GND 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 5

17、/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc DC input voltage range 0.0 V dc to VCCDC output voltage range 0.0 V dc to VCCCase operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V 0 to 1,000 ns VCC= 4.5 V 0 to

18、500 ns VCC= 6.0 V 0 to 400 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the paramete

19、rs specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance wi

20、th method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89765 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1

21、Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECI

22、FICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Stand

23、ard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094). 2.2 Non-Government publications. The

24、following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD7 - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX Adva

25、nced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S Arlington, VA 22201-2107). 2.3 Order of precedence. In the event of a conflict between the text of this drawing an

26、d the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accord

27、ance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MI

28、L-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein

29、 for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram s

30、hall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified in figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance cha

31、racteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89765 DLA LAND AND

32、 MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked wi

33、th the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the R

34、HA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“

35、 or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to th

36、e requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior

37、 to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A

38、certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Lan

39、d and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity

40、 retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in micro

41、circuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89765 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TA

42、BLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max High level output voltage VOHVIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHminimum or

43、 VILmaximum IOH= -4.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHminimum or VILmaximum IOH= -5.2 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low level output voltage VOLVIN= VIHminimum or VILmaximum IOL= +20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHminimum or VILmaximum IOL= +4.0 mA VCC= 4.5 V

44、1 0.26 2, 3 0.40 VIN= VIHminimum or VILmaximum IOL= +5.2 mA VCC= 6.0 V 1 0.26 2, 3 0.40 High level input voltage VIH 2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low level input voltage VIL 2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input capacitance CINVCC= 2.0 V to 6.0

45、 V, TC= +25C See 4.4.1c 4 10.0 pF Quiescent supply current ICCVIN= VCC or GND VCC= 6.0 V 1 8.0 A 2, 3 160.0 Input leakage current IINVCC= 6.0 V, VIN= VCCor GND 1 0.1 A 2, 3 1.0 Power dissipation capacitance CPDSee 4.4.1c 4 126.0 pF See footnotes at end of table. Provided by IHSNot for ResaleNo repro

46、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89765 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C

47、 TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max Functional tests See 4.4.1b 7, 8 Propagation delay time, CINto S0 tPHL1, tPLH1 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 160.0 ns VCC= 4.5 V 32.0 VCC= 6.0 V 27.0 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11

48、240.0 ns VCC= 4.5 V 48.0 VCC= 6.0 V 41.0 Propagation delay time, CINto S1 tPHL2, tPLH2 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 180.0 ns VCC= 4.5 V 36.0 VCC= 6.0 V 31.0 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 270.0 ns VCC= 4.5 V 54.0 VCC= 6.0 V 46.0 Propagation delay time, CINto S2, CINto COUTtPHL3, tPLH3 3/ TC= +25C CL= 50 pF See figure 4 VCC= 2.0 V 9 195.0 ns VCC= 4.5 V 39.0 VCC= 6.0 V 33.0 TC= -55C, +125C CL= 50 pF See figure 4 VCC= 2.0 V 10, 11 295.0 ns VCC= 4.5 V 59.0 VCC= 6.0 V 50.0 Propagation

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