1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add section 1.5, radiation features. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardeness assured requirements. Editorial changes throughout. TVN 05-03-15 Thomas M. Hess B Add case outline R.
2、 TVN 06-03-07 Thomas M. Hess C Add die requirement appendix A for device type 02. Update title with Radiation hardened to reflect correct function of the device. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 10-05-26 Thomas M. Hess D Update case outline X for flat pack d
3、imension A and add dimensions E2 and E3 to figure 1. Delete class M requirement throughout. Update devices supply information bulletin page- MAA 13-12-10 Thomas M. Hess REV SHEET REV D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHE
4、ET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Charles F. Saffle DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED
5、BY Charles F. Saffle APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUS BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 01-07-25 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-89795 SHEET 1 OF 25 DSCC FORM 223
6、3 APR 97 5962-E457-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docu
7、ments two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (
8、RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 89795 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number
9、1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generi
10、c number Circuit function 01 54ACT541 Octal bus buffer with three-state outputs, TTL compatible inputs 02 54ACT541 Radiation hardness, Octal bus buffer with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the produc
11、t assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20
12、or CDIP2-T20 20 Dual-in-line X See figure 1 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITI
13、ME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc
14、DC input clamp current (IIK) (VINVCC) . 20 mA DC output clamp current (IOK) (VOUTVCC) 20 mA Continuous output current (IOUT) (VOUT= 0.0 V to VCC) 50 mA Continuous VCCor GND current (ICC, IGND). 200 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) . -65C to +150C Lead tempera
15、ture (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 175C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage range (VOUT). 0.0 V
16、dc to VCCInput rise or fall time rate (t/V): VCC= 4.5 V to 5.5 V . 0 to 8 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Device type 02: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) No Single Event Latch-up (SEL) at an effective LET
17、 (see 4.4.4.4) 93 MeV-cm2/mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the param
18、eters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD -883. Provided by IHSNot f
19、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks.
20、 The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufa
21、cturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard M
22、icrocircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document
23、to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of t
24、hese documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201.) ASTM INTERNATIONAL (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradia
25、tion of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). (Non-Government standards and other publications are normally available from the organizations that
26、 prepare or distribute the documents. These documents may also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothi
27、ng in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE
28、 A 5962-89795 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. T
29、he modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shal
30、l be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be
31、as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be mainta
32、ined by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristi
33、cs and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in
34、 table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on t
35、he device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-
36、38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to
37、 listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
38、shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 6 DSCC
39、FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Positive input clamp voltage 3022 VI
40、C+ For input under test, IIN= 1.0 mA All Q, V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC- For input under test, IIN= -1.0 mA All Q, V Open 1 -0.4 -1.5 V High level output voltage 3006 VOH5/ VIN= VIHminimum or VILmaximum IOH= -50 A All All 4.5 V 1, 2, 3 4.4 V 5.5 V 5.4 VIN= VIHminimum or
41、 VILmaximum IOH= -24 mA All All 4.5 V 1 3.86 2, 3 3.70 5.5 V 1 4.86 2, 3 4.70 VIN= VIHminimum or VILmaximum IOH= -50 mA All All 5.5 V 1, 2, 3 3.85 Low level output voltage 3007 VOL5/ VIN= VIHminimum or VILmaximum IOL= 50 A All All 4.5 V 1, 2, 3 0.1 V 5.5 V 0.1 VIN= VIHminimum or VILmaximum IOL= 24 m
42、A All All 4.5 V 1 0.36 2, 3 0.50 5.5 V 1 0.36 2, 3 0.50 VIN= VIHminimum or VILmaximum IOL= 50 mA All All 5.5 V 1, 2, 3 1.65 High level input voltage VIH6/ All All 4.5 V and 5.5 V 1, 2, 3 2.0 V Low level input voltage VIL6/ All All 4.5 V and 5.5 V 1, 2, 3 0.8 V Input leakage current high 3010 IIH For
43、 input under test, VIN= VCCFor all other inputs, VIN= VCCor GND All All 5.5 V 1 0.1 A 2, 3 1.0 Input leakage current low 3009 IIL For input under test, VIN= GND For all other inputs, VIN= VCCor GND All All 5.5 V 1 -0.1 A 2, 3 -1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reprod
44、uction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/
45、 Symbol Test conditions 2/ 3/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max Quiescent supply current, output high 3005 ICCHVIN= VCCor GND All All 5.5 V 1 4.0 A 2, 3 80.0 M, D, P, L, R, F 7/ 02 Q, V 5.5 V 1 50.0 Qui
46、escent supply current, output low 3005 ICCLVIN= VCCor GND All All 5.5 V 1 4.0 A 2, 3 80.0 M, D, P, L, R, F 7/ 02 Q, V 5.5 V 1 50.0 Quiescent supply current, output three-state 3005 ICCZVIN= VCCor GND All All 5.5 V 1 4.0 A 2, 3 80.0 M, D, P, L, R, F 7/ 02 Q, V 5.5 V 1 50.0 Quiescent supply current de
47、lta, TTL input levels 3005 ICC8/ For input under test, VIN= VCC 2.1 V For all other inputs, VIN= VCCor GND All All 5.5 V 1, 2, 3 1.6 mA Three-state output leakage current high 3021 IOZH 12/ VIN= VCCor GND VOUT= VCC All All 5.5 V 1 0.5 A 2, 3 10.0 M, D, P, L, R, F 02 Q, V 5.5 V 1 5.0 Three-state outp
48、ut leakage current low 3020 IOZL 12/ VIN= VCCor GND VOUT= GNDAll All 5.5 V 1 -0.5 A 2, 3 -10.0 M, D, P, L, R, F 02 Q, V 5.5 V 1 -5.0 Input capacitance 3012 CIN TC = 25C See 4.4.1c All All GND 4 10 pF Output capacitance 3012 COUT TC = 25C See 4.4.1c All All 5.0 V 4 15 pF Power dissipation capacitance CPD9/ TC= 25C f = 1 MHz See 4.4.1c All All 5.0 V 4 35 pF Functional tests 3014 10/ VIN= VIHor VILVerify output VOUTSee 4.4.1b All All 4.5 V 7, 8 L H 5.5 V 7, 8 L H See footnotes at end of table. Provided by IHSNot for ResaleNo reprod
