1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update, part of 5 year review. ksr 07-02-21 Joseph Rodenbeck THE ORIGINIAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED REV SHET REV A A A SHEET 15 16 17 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10
2、 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michael A. Frye DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFEN
3、SE DRAWING APPROVAL DATE 93-02-10 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, REGISTERED 8K X 8-BIT PROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-89967 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E208-07 Provided by IHSNot for ResaleNo reproduction or networking permitted with
4、out license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89967 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classe
5、s Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the
6、following example: 5962 - 89967 01 Q Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the
7、MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device
8、 type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 8K X 8-bit registered PROM 60 ns 02 8K X 8-bit registered PROM 50 ns 03 8K X 8-bit registered PROM 25 ns 04 8K X 8-bit registered PROM 18 ns 1.2.3 Device class designator. The device clas
9、s designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certif
10、ication and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line package Y GDFP2-F28 28 Flat package 3 CQCC1-N28 28 Square lea
11、dless chip carrier package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will
12、also be listed in QML-38535 and MIL-HDBK-103 (see 6.6 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89967 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM
13、 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range to ground potential (VCC)-0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high Z state.-0.5 V dc to +7.0 V dc DC input voltage -3.0 V dc to +7.0 V dc DC program voltage.13.0 V dc Maximum power dissipation.1.0 W 3/ Lead
14、 temperature (soldering, 10 seconds).+260C Thermal resistance, junction-to-case (JC)See MIL-STD-1835 Junction temperature (TJ)+175C Storage temperature range (TSTG) .-65C to +150C Temperature under bias.-55C to +125C Data retention 10 years, (minimum) 1.4 Recommended operating conditions. Supply vol
15、tage range (VCC) +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) .0 V dc Input high voltage (VIH) .2.0 V dc minimum Input low voltage (VIL) .0.8 V dc maximum Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks
16、. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manu
17、facturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard
18、 Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The followin
19、g document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phen
20、omena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) 2/ Stresses above the absolute maximum rating may cause perm
21、anent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Must withstand the added PDdue to short circuit test e.g.; IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC
22、UIT DRAWING SIZE A 5962-89967 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Asso
23、ciation, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational ser
24、vices.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQ
25、UIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or f
26、unction as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall
27、 be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figur
28、e 1. 3.2.3 Truth table(s). The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 2. When required in screening (see 4.2 herein) or qualification conformance inspection, groups A, B, or C (see 4.3), th
29、e devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed. 3.2.3.2 Programmed devices. The truth table for programmed devices shall be as specified by an attached altered item drawing. 3.3 Electrical performance characte
30、ristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrica
31、l test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire S
32、MD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for dev
33、ice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix
34、 A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufa
35、cturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the req
36、uirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89967 DEFENSE SUPPLY CENTER COLUMBUS COLU
37、MBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to t
38、his drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device cl
39、ass M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class
40、 M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations, two processing options are provi
41、ded for selection in the contract using an altered item drawing. 3.11.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the specifi
42、c program configuration. 3.11.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 4. VERIFICATION 4.1 Sampling and i
43、nspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device cla
44、ss M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For devi
45、ce class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (p
46、ostburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit s
47、hall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein). c. Interim and final electrical test parameters shall be as spec
48、ified in table IIA herein. d. A data retention stress test shall be included as part of the screening procedure and shall consist of the following: (Steps 1 through 4 are performed at the wafer level.) (1) Program 100 percent of the total number of cells, excluding the security bit. (2) Bake, unbiased, for 72 hours at +140C or for 48 hours at +150C or for 8 hours at +200C, or 2 hours at +300C for unassembled devices only. (3) Perform margin test using Vm = +5.7 V at +25C using loose timing (i.e., tSA 1 s). (4) Erase. Provided by IHSNot for Resa
