DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

上传人:tireattitude366 文档编号:699824 上传时间:2019-01-01 格式:PDF 页数:13 大小:179.38KB
下载 相关 举报
DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第1页
第1页 / 共13页
DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第2页
第2页 / 共13页
DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第3页
第3页 / 共13页
DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第4页
第4页 / 共13页
DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第5页
第5页 / 共13页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 10-03-04 Charles F. Saffle The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5

2、6 7 8 9 10 11 12 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Tim H. Noh APPROVED BY William

3、 K. Heckman MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-03-19 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90695 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E490-09 Provid

4、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product a

5、ssurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) le

6、vels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90695 01 M K X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA

7、designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (

8、-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ALS29825 8-bit bus interface flip-flops with three-state outputs 1.2.3 Device class designator. The device class designator is a single l

9、etter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification

10、to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat package L GDIP3-T24 or CDIP4-T24 24 Dual-in-line package 3 CQCC1-N28 28 Square chip carrier 1.2

11、.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90695 DEFENSE SUPPL

12、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) -0.5 V dc to +7.0 V dc Input voltage range -1.2 V dc at -18 mA to +7.0 Vdc Voltage applied to a disabled three-state output -0.5 V dc to +5.5 V dc Storage

13、temperature range -65C to +150C Continuous power dissipation (PD) 2/ . 632.5 mW Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage (VCC) 4.5 V dc minimum to 5.5

14、 V dc maximum Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) . 0.8 V dc Maximum high level output current (IOH) -18 mA Maximum low level output current (IOL) 32 mA Minimum pulse duration tw: CLR low 7 ns CLK high 8 ns CLK low 8 ns Minimum setup time before CLK

15、tSU: CLR inactive . 7 ns Data . 4 ns CLKEN high or low 8 ns Minimum hold time, data after CLK th: Data . 4 ns CLKEN 2 ns Operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbo

16、oks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF

17、DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents a

18、re available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum l

19、evels may degrade performance and affect reliability. 2/ Continuous power dissipation is defined as VCCx ICC. Device must withstand the added PDdue to short circuit test; e.g., IOS.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

20、 DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing

21、in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in

22、the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as s

23、pecified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall

24、be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Test circiut and switching waveforms. The test circuit and switching waveforms shall be as specified

25、 on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range

26、. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be ma

27、rked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be i

28、n accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall

29、 be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certifica

30、te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers pr

31、oduct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device cl

32、ass M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for a

33、ny change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore

34、at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 10 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

35、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroups Limits Unit

36、Min Max High level output voltage VOHVCC= 4.5 V, VIN= 2.0 V or 0.8 V IOH= -12 mA 1, 2, 3 2.4 V IOH= -18 mA 2.0 Low level output voltage VOLVCC= 4.5 V, IOL= 32 mA, VIN= 2.0 V or 0.8 V 1, 2, 3 0.5 V Input clamp voltage VICVCC= 4.5 V, IIN= -18 mA 1, 2, 3 -1.2 V Short circuit output current IOSVCC= 5.5

37、V, VOUT= 0 V 1/ 1, 2, 3 -75 -250 mA Off state output current IOZH VCC= 5.5 V, VOUT= 2.4 V 1, 2, 3 50 A IOZL VCC= 5.5 V, VOUT= 0.4 V -50 High level input current IIH1 VCC= 5.5 V, VIN= 5.5 V 1, 2, 3 0.1 mA IIH2 VCC= 5.5 V, VIN= 2.7 V 1, 2, 3 20 A Low level input current IILVCC= 5.5 V, VIN= 0.4 V 1, 2,

38、 3 -0.5 mA Supply current ICCH VCC= 5.5 V, VIN= 0.0 V, 5.5 V 1, 2, 3 100 mA ICCL 105 ICCZ 115 Functional tests See 4.4.1b, VIL= 4.5 V and 5.5 V 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

39、DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max Propaga

40、tion delay time, CLK to any Q tPLH1VCC= 5.0 V CL= 50 pF See figure 3 9 2 8.5 ns VCC= 4.5 V to 5.5 V 10, 11 2 14 tPHL1VCC= 5.0 V 9 2 8.5 VCC= 4.5 V to 5.5 V 10, 11 2 17.5 tPLH2VCC= 5.0 V CL= 300 pF See figure 3 9 2 14 ns VCC= 4.5 V to 5.5 V 10, 11 2 16 tPHL2VCC= 5.0 V 9 2 17.5 VCC= 4.5 V to 5.5 V 10,

41、 11 2 21 Propagation delay time, CLR to any Q tPHL3VCC= 5.0 V CL= 50 pF See figure 3 9 1 14.5 ns VCC= 4.5 V to 5.5 V 10, 11 2 21 Enable time, OC to any Q tPZH1VCC= 5.0 V CL= 50 pF See figure 3 9 1 14.5 ns VCC= 4.4 V to 5.5 V 10, 11 1 17.5 tPZL1VCC= 5.0 V 9 1 13 VCC= 4.5 V to 5.5 V 10, 11 1 18 tPZH2V

42、CC= 5.0 V CL= 300 pF See figure 3 9 1 18 ns VCC= 4.5 V to 5.5 V 10, 11 1 22 tPZL2VCC= 5.0 V 9 1 25 VCC= 4.5 V to 5.5 V 10, 11 1 29.5 Disable time, OC to any Q tPHZVCC= 5.0 V CL= 50 pF See figure 3 9 1 12 ns VCC= 4.5 V to 5.5 V 10, 11 1 16 tPLZVCC= 5.0 V 9 1 10 VCC= 4.5 V to 5.5 V 10, 11 1 12 1/ Not

43、more than one output should be shorted at one time and the duration of the short should not exceed 1 second. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

44、 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines K and L 3 Terminal number Terminal connections 1 OC$ $ $ $ $1 NC 2 OC$ $ $ $ $2 OC$ $ $ $ $1 3 1D OC$ $ $ $ $2 4 2D 1D 5 3D 2D6 4D 3D 7 5D 4D8 6D NC 9 7D 5D10 8D 6D 11 CLR 7D 12 GND 8D13 CLK CLR 14 CLKEN GND 15 8

45、Q NC 16 7Q CLK17 6Q CLKEN 18 5Q 8Q 19 4Q 7Q 20 3Q 6Q 21 2Q 5Q 22 1Q NC 23 OC$ $ $ $ $3 4Q 24 VCC3Q 25 2Q 26 1Q 27 OC$ $ $ $ $3 28 VCCNC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

46、UIT DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 Inputs Output OC$ $ $ $ $CLR CLKEN CLK D Q L L X X X L L H L H H L H L L L L H H X X QOH X X X X Z OC$ $ $ $ $= H if any OC$ $ $ $ $1, OC$ $ $ $ $2, or OC$ $ $ $ $3 i

47、s high $ $ $ $ $= L if all of OC$ $ $ $ $1, OC$ $ $ $ $2, and OC$ $ $ $ $3 are low H = High voltage level L = Low voltage level X = Irrelevant QO= Level of Q before the indicated steady-state input conditions were established. = Low to high transition FIGURE 2. Truth table. Provided by IHSNot for Re

48、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 Switch position table Test S1 S2 tPLHClosed Closed tPHLClosed Closed tPZHOpen ClosedtPZLClosed Open tPHZClosed Closed tPLZClosed Closed NOTES: 1. CLincludes probe and jig capacitance. 2. Waveform 1 is for an output with internal conditions such that the output is low except w

展开阅读全文
相关资源
猜你喜欢
  • ASTM D7083-2016 red 9060 Standard Practice for Determination of Monomeric Plasticizers in Poly (Vinyl Chloride) (PVC) by Gas Chromatography《采用气相色谱法测定聚氯乙烯 (PVC) 中单体增塑剂的标准实施规程》.pdf ASTM D7083-2016 red 9060 Standard Practice for Determination of Monomeric Plasticizers in Poly (Vinyl Chloride) (PVC) by Gas Chromatography《采用气相色谱法测定聚氯乙烯 (PVC) 中单体增塑剂的标准实施规程》.pdf
  • ASTM D7084-2004 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf ASTM D7084-2004 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf
  • ASTM D7084-2004(2009) 923 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf ASTM D7084-2004(2009) 923 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf
  • ASTM D7084-2004(2017) 0000 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf ASTM D7084-2004(2017) 0000 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers《催化剂和催化剂载体的整体粉碎力的测定的标准试验方法》.pdf
  • ASTM D7084-2018 red 0625 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers.pdf ASTM D7084-2018 red 0625 Standard Test Method for Determination of Bulk Crush Strength of Catalysts and Catalyst Carriers.pdf
  • ASTM D7085-2004(2010)e1 0625 Standard Guide for Determination of Chemical Elements in Fluid Catalytic Cracking Catalysts by X-ray Fluorescence Spectrometry (XRF)《X射线荧光光谱法(XRF)测定流化床.pdf ASTM D7085-2004(2010)e1 0625 Standard Guide for Determination of Chemical Elements in Fluid Catalytic Cracking Catalysts by X-ray Fluorescence Spectrometry (XRF)《X射线荧光光谱法(XRF)测定流化床.pdf
  • ASTM D7085-2004e1 Standard Guide for Determination of Chemical Elements in Fluid Catalytic Cracking Catalysts by X-ray Fluorescence Spectrometry (XRF)《X射线荧光光谱法(XRF)测定流化床催化裂化催化剂中的化学.pdf ASTM D7085-2004e1 Standard Guide for Determination of Chemical Elements in Fluid Catalytic Cracking Catalysts by X-ray Fluorescence Spectrometry (XRF)《X射线荧光光谱法(XRF)测定流化床催化裂化催化剂中的化学.pdf
  • ASTM D7087-2005a Standard Test Method for An Imaging Technique to Measure Rust Creepage at Scribe on Coated Test Panels Subjected to Corrosive Environments《用成像技术在腐蚀环境中测量涂覆试验板划痕处锈蚀蠕.pdf ASTM D7087-2005a Standard Test Method for An Imaging Technique to Measure Rust Creepage at Scribe on Coated Test Panels Subjected to Corrosive Environments《用成像技术在腐蚀环境中测量涂覆试验板划痕处锈蚀蠕.pdf
  • ASTM D7087-2005a(2010) 6250 Standard Test Method for An Imaging Technique to Measure Rust Creepage at Scribe on Coated Test Panels Subjected to Corrosive Environments《用成像技术在腐蚀环境中测量.pdf ASTM D7087-2005a(2010) 6250 Standard Test Method for An Imaging Technique to Measure Rust Creepage at Scribe on Coated Test Panels Subjected to Corrosive Environments《用成像技术在腐蚀环境中测量.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1