1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update and part of five year review. tcr 06-12-14 Raymond Monnin REV SHET REV A A A A SHEET 15 16 17 18 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEF
2、ENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 8-BIT UVEPROM, MONOLITHIC SILICON AND AGENCIES
3、OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-06-11 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90912 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E078-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ
4、E A 5962-90912 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choic
5、e of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90912 01 M X X Federal stock cla
6、ss designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the a
7、ppropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device ty
8、pe Generic number Circuit function Access time 01 27C020 (256K X 8) UVEPROM 250 ns 02 27C020 (256K X 8) UVEPROM 200 ns 03 27C020 (256K X 8) UVEPROM 150 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class De
9、vice requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as design
10、ated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style 1/ X GDIP1-T32 or CDIP2-T32 32 Dual-in-line package Y CQCC1-N32 32 Rectangular leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MI
11、L-PRF-38535, appendix A for device class M. 1/ Lid shall be transparent to permit ultraviolet light erasure. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90912 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO
12、 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Storage temperature range. -65C to +150C Input or output voltage range with respect to ground . -0.6 V dc to VCC+0.5 V dc Voltage on A9 with respect to ground . -0.6 V dc to +13.0 V dc VPPsupply voltage range
13、 with respect to ground during programming . -0.6 V dc to +13.5 V dc VCCsupply voltage range with respect to ground . -0.6 V dc to +7.0 V dc Maximum power dissipation PD. 330 mW Lead temperature (soldering, 10 sec.) +300C Thermal resistance, junction-to-case (JC): Case X and Y See MIL-STD-1835 Junct
14、ion temperature (TJ) +150C 3/ Endurance. 50 cycles/byte, minimum Data retention . 10 years, minimum 1.4 Recommended operating conditions. Case operating temperature range (TC) -55C to +125C Supply voltage range (VCC) . 4.5 V dc to 5.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standa
15、rds, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integra
16、ted Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-H
17、DBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publicat
18、ions. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for
19、the Measurement of Single Event Phenomena (SEP) induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) _ 2/ Stresse
20、s above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance
21、with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90912 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUS
22、TRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the
23、organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes
24、 precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified here
25、in or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class lev
26、el B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The
27、 case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contract
28、s involving no altered item drawing shall be as specified on figure 2 herein. When required in screening (see 4.2 herein) or qualification conformance inspection groups A, B, C, or D (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the t
29、otal number of cells shall be programmed or at least 25 percent of the total number of cells to any altered item drawing. 3.2.3.2 Programmed devices. The truth table for programmed devices shall be as specified by an attached altered item drawing. 3.3 Electrical performance characteristics and posti
30、rradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requiremen
31、ts shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Processing EPROMS. Since the device is capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations; two processing options are pro
32、vided for selection in the contract, using an altered item drawing. 3.5.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the speci
33、fic program configuration. 3.5.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. Provided by IHSNot for ResaleNo r
34、eproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90912 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.5.3 Erasure of EPROMS. When specified, devices shall be erased in accordance with
35、 the procedures and characteristics specified in 4.5 herein. 3.5.4 Verification of erasure or programmed EPROMS. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7) to
36、 verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked.
37、For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in acco
38、rdance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.6.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a
39、“C“ as required in MIL-PRF-38535, appendix A. 3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
40、compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product
41、meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.8 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M
42、in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.9 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any cha
43、nge that affects this drawing. 3.10 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at th
44、e option of the reviewer. 3.11 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.12 Endurance. A reprogrammability test shall be completed as part of the vendors reliability mon
45、itors, this reprogrammability test shall be done only for initial characterization and after any design or process changes which may affect the reprogrammability of the device. This test shall consist of 20 program/erase cycles on 25 devices with the following conditions: (1) All devices selected fo
46、r testing shall be programmed per 3.2.3.2 herein (see 4.6). (2) Verify pattern (see 3.5.4). (3) Erase (see 4.5). (4) Verify pattern erasure (see 3.5.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90912 D
47、EFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TA +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroupsDevice type Min Max Unit Input load current
48、ILIVIN= 0 V to 5.5 V 1,2,3 All -1 +1 A Output leakage current ILOVOUT= 0 V to 5.5 V 1,2,3 All -10 +10 A VPPload current read IPP1VPP= 5.5 V, CE = OE = VIL1,2,3 All 100 A VCCactive current ICC1CE = VIL IOUT= 0 mA VCC= VPP= 5.5 V f = 1/tAVQV 1,2,3 All 60 mA VCCstandby current (TTL) ICC2CE = VIHVCC= 5.5 V 1,2,3 All 1 mA VCCsuper standby current (CMOS) ICC3CE = VCC + 0.3 V VCC= 5.5 V 1,2,3 All 100 A Input low voltage VIL1,2,3 All -0.1 1/ 0.8 V Input high voltage VIH1,2,3 All 2.0 VCC+0.5 V 1/ V Output low voltage V
