1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirments. Editorial changes throughout. - gap 10-03-10 Charles F. Saffle The original first sheet of this drawing has been replaced. REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4
2、 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Thanh V. Nguyen APPRO
3、VED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, BI-QUINARY COUNTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-08-28 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90935 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E509-09 Provided by IHSNot for ResaleNo reproduction or networking permitte
4、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device
5、classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in
6、 the following example: 5962 - 90935 01 M E X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet th
7、e MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The devi
8、ce type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 10538 Bi-quinary counter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentatio
9、n M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as fo
10、llows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package F GDFP2-F16 or CDFP3-F16 16 Flat package 2 CQCC1-N20 20 Square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-
11、38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute
12、 maximum ratings. 1/ Supply voltage range at VCC= 0 V, (VEE) -8.0 V dc minimum to 0.0 V dc maximum Input voltage range (VIN) . 0 V dc to VEEOutput source current, continuous (IO) 50 mA Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ)
13、+165C Maximum power dissipation (PD) 610 mW Thermal resistance, junction-to-case (JC) See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range at VCC= 0 V, (VEE) -5.46 V dc minimum to -4.94 V dc maximum Ambient operating temperature range (TA) . -55C to +125C Minimum high level in
14、put voltage (VIH): TA= +25C . -0.780 V TA= +125C . -0.630 V TA= -55C -0.880 V Maximum low level input voltage (VIL): TA= +25C . -1.850 V TA= +125C . -1.820 V TA= -55C -1.920 V 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and
15、handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTME
16、NT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these docum
17、ents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, t
18、he text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels ma
19、y degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. R
20、EQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or
21、 function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions sha
22、ll be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure
23、1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance char
24、acteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The el
25、ectrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the en
26、tire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking f
27、or device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, ap
28、pendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a
29、manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, t
30、he requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall b
31、e provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 V
32、erification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microc
33、ircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 33 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A
34、5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Limits Unit Min Max Cases E, F, and 2 Quiescent condit
35、ions 1/ VIHVILHigh level output voltage VOHOutputs terminated through 100 to -2.0 V VCC= 0.0 V -0.780 -1.850 1 -0.930 -0.780 V -0.630 -1.820 2 -0.825 -0.630 -0.880 -1.920 3 -1.080 -0.880 Low level output voltage VOLVEE= -5.2 V 2/ -0.780 -1.850 1 -1.850 -1.620 V -0.630 -1.820 2 -1.820 -1.545 -0.880 -
36、1.920 3 -1.920 -1.655 High level threshold output voltage VOHA-1.105 -1.475 1 -0.950 -0.780 V -1.000 -1.400 2 -0.845 -0.630 -1.255 -1.510 3 -1.100 -0.880 Low level threshold output voltage VOLA-1.105 -1.475 1 -1.850 -1.600 V -1.000 -1.400 2 -1.820 -1.525 -1.255 -1.510 3 -1.920 -1.635 Power supply dr
37、ain current 3/ IEEVEE= -5.2 V VCC= 0.0 V 1 -88 mA 2, 3 -97 High level input current IIH1VEE= -5.2 V VCC= 0.0 V VIH= -0.780 V at +25C = -0.630 V at +125C = -0.880 V at -55C C11 220 A 2, 3 375 IIH2S0, S1, S2, S31 245 2, 3 415 IH3C21 290 2, 3 495 IIH4Reset 1 410 2, 3 700 Low level input current IILVEE=
38、 -5.2 V, VCC= 0.0 V VIL = -1.850 V at +25C = -1.820 V at +125C = -1.920 V at -55C 1, 3 0.5 A 2 0.3 Functional tests VEE= -4.94 V, -5.46 V See 4.4.1b 7, 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR
39、CUIT DRAWING SIZE A 5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Limits Unit Min Max Ca
40、ses E, F, and 2 DC rapid test 4/ VIHVILHigh level output voltage VOHOutputs terminated through 100 to -2.0 V VCC= 0.0 V VEE= -5.2 V 2/ -0.804 -1.856 1 -0.952 -0.804 V -0.656 -1.826 2 -0.849 -0.656 -0.906 -1.926 3 -1.104 -0.906 Low level output voltage VOL-0.804 -1.856 1 -1.856 -1.629 V -0.656 -1.826
41、 2 -1.826 -1.555 -0.906 -1.926 3 -1.926 -1.665 High level threshold output voltage VOHA-1.127 -1.484 1 -0.972 -0.804 V -1.024 -1.410 2 -0.869 -0.656 -1.279 -1.520 3 -1.124 -0.906 Low level threshold output voltage VOLA-1.127 -1.484 1 -1.856 -1.609 V -1.024 -1.410 2 -1.826 -1.535 -1.279 -1.520 3 -1.9
42、26 -1.645 Power supply drain current 3/ IEEVEE= -5.2 V VCC= 0.0 V 1 -87 mA 2, 3 -96 High level input current IIH1VEE= -5.2 V VCC= 0.0 V VIH= -0.804 V at +25C = -0.656 V at +125C = -0.906 V at -55C C11 205 A 2, 3 360 IIH2S0, S1, S2, S31 230 2, 3 400 IH3C21 2752, 3 480 IIH4Reset 1 395 2, 3 685 Low lev
43、el input current IILVEE= -5.2 V, VCC= 0.0 V VIL = -1.856 V at +25C = -1.826 V at +125C = -1.926 V at -55C 1, 3 0.5 A 2 0.3 Functional tests VEE= -4.94 V, -5.46 V See 4.4.1b 7, 8 See footnotes at the end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr
44、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90935 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subg
45、roups Limits Unit Min Max Cases E, F, and 2 AC test conditions Propagation delay time, C2to Q1, Q2, Q3, Q%3tPHL1, tPLH1VEE= -3.2 V VCC= 2.0 V CL 5 pF PS1= 1.11 V at +25C = 1.24 V at +125C = 1.01 V at -55C PS2= 0.31 V at +25 = 0.36 V at +125C = 0.28 V at -55C Load all outputs through 100 to GND See f
46、igure 4 9 1.5 5.0 ns 10 1.5 6.2 11 1.4 6.2 Propagation delay time, C1to Q0, Q%0tPHL2, tPLH29 1.5 4.8 ns 10 1.5 5.5 11 1.4 5.5 Propagation delay time, Snto Qn, Q%ntPLH39 1.5 5.0 ns 10 1.5 6.2 11 1.4 5.2 Propagation delay time, Reset to Qn, Q%ntPHL31.5 5.0 ns 10 1.5 6.2 11 1.4 5.5 Rise time tr9 1.1 4.
47、5 ns 10 1.1 5.0 11 1.1 4.7 Fall time tf1.1 4.5 ns 10 1.1 5.0 11 1.1 4.7 Toggle frequency ftog9, 10, 11 125 MHz 1/ The quiescent limits are determined after a device has reached thermal equilibrium. This is defined as the reading taken with the device in a socket with 500 LFPM of +25C, +125C or -55C
48、(as applicable) air blowing on the unit in a transverse direction with power applied for at least four minutes before the reading is taken. This method was used for theoretical limit establishment only. All devices shall be tested to the delta V (rapid test) conditions specified herein. The rapid test method is an equivalent method of testing quiescent conditions. 2/ The high and low level output current varies with temperature, and shall
