DLA SMD-5962-90963-1992 MICROCIRCUIT DIGITAL CMOS 16 19 BIT FFT CONTROLLER AND ARITHMETIC UNIT MONOLITHIC SILICON《硅单块 16 19比特快速傅里叶变换控制器和运算器 互补金属氧化物半导体 数字微型电路》.pdf

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1、LTR .? . SMD-5962-90963 59 m 9999996 0023396 LOT m DESCRIPTION DATE (YR-HO-DA) APPROVED REV STATUS STANDARDIIED MILITARY DRAWING MICROCIRCUIT, DIGITAL, CMOS, 16/19 BIT FFT CONTROLLER AND ARITHMETIC UNIT, MONOLITHIC SILICON THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPA

2、RTHENT OF DEFENSE AIISC N/A SHEET 1 OF 43 JUL 91 5962-EO75 DISTRIBUTION STATEHENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-90963 57 I 9997776 0023777 O46 STANDARDIZED MILITARY

3、 DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application

4、(device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class H microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, iProvisions for the use of MIL-STD-883 in c

5、onjunction with coipliant non-JAN devices“. available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN. When 1.2 m. The PIN shall be as shown in the following exemple: SIZE 5962-90963 A REVISION LEVEL SHEET 2 - X - X - M - 5962 90963- o1 I I 1 I I I I I I I I I Lcad Ca

6、se i Device i Device RHA i Federal stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) desianator. Device classes H, B, and S RHA marked devices shall meet the D

7、evice classes Q and V RHA MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. markeddevices shall meet the MIL-1-36535 specified RHA Ievels and shall be mmrked with the appropriate RW designator. A dash (-1 indicates a non-RHA device. 1.2.2 Device tYDe(s). The d

8、evice type(s) shall identify the circuit function as follows: Device type Generic nuaber Circuit function Frwency o1 TMC2310V CMOS 16/19-bit FFT Controller and Arithmetic Unit 15 HHz o2 TnC23lOvl CMOS 16/19-bit FFT Controller and Arithmetic Unit 20 HHz 1.2.3 Device class designator. The device class

9、 designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 El or S Q or V Certification and qualifica

10、tion to MIL-M-38510 Certification ancl qualification to MIL-1-38535 1.2.4 Case outLineW. The case outlinds) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descript i ve desiqnator Terminals Packacre stvle X Y See figure 1 See figure 1 88 Pin grid array package 100 Flat package

11、 1.2.5 Lead finish. The lead finish shall be as specified in MIL-M-38510 for classes N, B, and S or NIL-1-38535 for classes Q and V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. for use in specifications when lead finishes A, 8, and C are considered acceptable and inte

12、rchangeable without preference. The “X“ designation is DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-.k STAIJDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1 SIZE 5962-90963 A REVISION LEVEL SHE

13、ET 3 1.3 Absolute maximum ratings. I/ Supply voltage range Inputvoltagerange . Applied output voltage range 21 . Forced output current rangez/,*/ Output short circuit duration 5/ Power dissipation, unloaded (P ) o/ . Lead temperature (soldering, 18 srcamls) Thermal resistance, junction-to-case (eJc)

14、: Case outline X Case outline Y Junction teverature (TJ) Storage temperature range -0.5 V dc to +7.0 V dc -3.0 IA to +6.8D 1 .O second 88o.v +Mo“C 12OC/U 9OC/U +17SC -65OC to +150c -0.5 V dc to VDD + 0.5 V dc -0.5 V dc to V + 0.5 V dc 1.4 Recommended -rating conditions. Supply voltage range WDD) Inp

15、ut low voltage (V ) . 0.8 V dc maximum Input high voltage (ai,) 2.0 V dc minimum Input high voltage, c ock (VIHC) 2.3 V dc minimum Output low current (1 L) 4.0 IA maximum Output high current ( these tests shall have been fault graded in accordance with MIL-STD-883, test method 5M2 (see 1.5 herein).

16、For device classes Q and V, subgroups 7 and 8 shall include verifying the c. Subgroup 4 (CI, measurements) shall be measured only for the initial test and after process or design changes which may%ect capacitance. A minimum sample size of 5 devices with zero rejects shall be required. _ DESC FORM 19

17、3A JL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-909b3 59 999999b 0023805 T42 TABLE IIA. Electrical test rcauireaents. i I I I Test requirements Subgroups i subgroups i (per method 5005,table I) (per MIL-1-38535, I I table III) I I i

18、 Device i Device i Device i Device i Device i I class I class I class I class I class I i I I InlBlslQlvl I interim electrical I 1t7r9 I 1,7,9 I 1,7,9 I 1,789 I 1,7,9 I I wrameters (see 4.2) I I I I I I I I I I I - I I Final electrical I parameters (see 4.2) I Group A test I requirements (see 4.4) I

19、 Grwp B end-point electrical I parameters (see 4.4) I 1,2,3,4, i 1,2,3,4, 11 11; 7,8,9,10,17 8 9 10, i I I l i I I I t I I i I I I i I I I i I I I I I I I I I Croup C end-point electrical I 1,2,7,9 I 1,2,7,9 I I 1,2,7,9 I 1,2,7,9 I I parameters (see 6-41 I I I I I I t I I I I l I parameters (see 4.1

20、) I I I I I I I 1 I I I I Group D end-point electrical I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 1 1,2,7,9 I I I I l l I I I Grwp E end-point electrical I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I 1,2,7,9 I I paraaetcrs (see 4.4) I I I I I I I/ PDA applies to subgroup 1. - Z/ PDA applies to subgroups I

21、and 7. I 4.4.2 Grow 8 inspcction. The group B inspection end-point electrical parameters shall be as specified in table The group C inspection end-point electrical parameters shall be as specified in table III herein. 4.4.3 GrWD C inspection. IIA herein. 4.4.3.1 Additional criteria for device classe

22、s M, B. and S. Steady-state life test conditions, method 1005 of RIL-STD-883: a. Test condition A, El, C, or D. with the certificate of compliance. qualifying activity. For device class il, the test circuit shall be submitted to DESC-ECC for review For device classer B and S, the test circuit shall

23、be submitted to the b. TA = +12SDC, minimum. c. Test duration: 1,oM) hours, except as permitted by method 1005 of MIL-STD-883. 4.4.3.2 Additional criteria for device classes Q and V. The steady-state Life test duration, test condition and test temperature or approved alternatives shall be as specifi

24、ed in the device manufacturers CW plan in accordance uith MIL-1-38535. compliance and shall be under the control of the device manufacturers TRB in accordance uith MIL-1-38535. The steady-state life test circuit shall be submitted to DESC-ECC uith the certificate of 4.4.4 Grow D inswction. The group

25、 D inspection end-point electrical parameters shall be as specified in table IIA herein. STAIOIMBDIZED 5962-90963 MLITARY DRAWIIG DEFEISE ELECTROMICS SUPPLY CEIPTER DIIYTOIO, OHIO 45444 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

26、S-,-,-SMD-5962-70963 59 999999b 002380b 989 STADARDI ZED MILITARY DRAWING DEFEUSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE IIB. Additional screenina for device class V. SIZE 5962-90963 A REVISION LEVEL SHEET 11 Test i NIL-STO-=, test method i Lot requirement i I I I Particle impact I 2020

27、I 100% I noise detection I I I I I internal visual i MIO, condition A or i 1ooX i I approved alternate l I West ruct ive I 2023 or I 1 bond pull I approved alternate I I 1 I I Reverse biaa burn-in 1015 j loox i I I I Burn-in I 1015, total of 240 hours I 1ooX I I at +125OC I I I I Radiogrsphic I 201

28、2 I 1ooX 4.4.5 Group E inspection. Croup E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). device class H shall be H and D. specified in the acquisition document. RHA levels for device classes B, S, Q, and V shall be H, D, R, and H and for

29、RHA quality conformance inspection sample tests shall be performed at the RHA level a. b. C. d. e. f. B. RHA tests for device classes B and S for levels H, D, R, and H or for device class N for Levels H and D shall be performed through each level to determine at what levels the devices meet the RHA

30、requirements. These RHA tests shall be performed for initial qualification and after design or process changes which may affect the RHA performnce of the device. End-point electrical parameters shall be as specified in table IIA herein. Prior to total dose irradiation, each selected sample shall be

31、assembled in its qualified package. pass the specified group A electrical parameters in table I for subgroups specified in table IIA herein. For device classes H, B, and S, the devices shall be subjected to radiation hardness assured tests as specified in MIL-H-38510 for RHA level being tested, and

32、neet the postirradiation end-point electrical parameter limits as defined in table I at TA = t25OC *5 percent, after exposure. Prior to and during total dose irradiation testing, the devices shall be biased to establish a worst case condition as specified in the radiation exposure circuit. For devic

33、e classes N, 8, and S, subgroups 1 and 2 in table V, method 5005 of NIL-STD-883 shall be tested as appropriate for device construction. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. It shall Provided by IHSNot for ResaleNo reproduction or network

34、ing permitted without license from IHS-,-,-SMD-5962-909b3 59 m 9999996 0023807 815 9 I e I L I -120 (3.05) -i- Case outline X .lo0 (.54) basic .I50 (3.81) l 13, note 4 88, note 5 NHLKJHGFEOCBA IT STANDARD1 ZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVE

35、L 13 12 5962-90963 SHEET 12 o8 DETAIL B il SEE 07 06 O5 04 03 021 O1 DETAIL SEE =i% 1 sym I Min Max Notes I I I A .I15 (2.92) .I90 (4.83) i 1 -080 (2.03) .I25 (3.18) I .O17 (0.43) i .O20 (0.51) 1 3 1 -080 (2.03) I I I I .O50 (1.27) nominal 1 00 DETAIL A -q p- .O08 DETAIL 6 T E 1 3TES : 1. Dimensions

36、 are in inches. Metric quivalents are in parentheses. 2. 3. A corner one identifier shall be located within the shaded area shown. 4. Dimension M defines matrix size. 5. Metric equivalents are given for general information only. Dimension N defines pin count. FIGURE 1. Case outline. DESC FORM 193A J

37、UL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-909b3 59 999999b 0023808 751 W STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER t SIZE 5962-90963 A tese outline Y .010-1 MIN I l i SYm i Min i Max I Notes I l-+- IA I .I14

38、 (2.89) I .I54 (3.91) I I I A, I .O55 (1.40) I .O75 (1.90) I 1 -7 i .O08 (0.20) i .M2 (0.30) i l I .O05 (0.13) 1 .O09 (0.23) I I ib I DI, El I .670 (17.02) I ,760 (19.30) I I I le I I I .O25 (0.64) basic I t I I 100, note 5 I I 25, note 6 I IN I I I ND I I +- I IP I .O25 (0.63) I I I I l I I IC ID,E

39、 I I I 1.300 (32.95) reference I I I I l I 1 I L I .220 (5.58) I .320 (8.12) I I I II-II- NOTES: 1. Dimensions are in inches. Metric equivalents are in parentheses. 2. 3. 4. 5. Dimension N is number of terminals. 6. Metric equivalents are given for general information only. A pin one identifier shal

40、l be located adjacent to pin one and within the shaded area shown. Dimensions Dl and El: exclusive of package anomalies (lid misalignment, ceramic particles, etc.). anomalies shall not exceed .O10 inch (0.25 mm). Dimension ND it number of terminals per package edge. Such Figure 1. Case outlines - Co

41、ntinued. DAYTON, OHIO 45444 I REVISION LEVEL I SHEET I 1 I 13 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-909b3 59 m 9999996 O023809 698 I I I I Device types I 01, o2 I I I case outline I X i I I I I I I I Pin I Nam

42、e I Pin I Name I Pin I Nor I Pin I Nane I BI c2 CI - DZ DI - E2 El - F2 FI GI - - 62 HI H2 JI - - J2 KI K2 - LI L2 MI NI - - 112 GND i M7 i ND 1 GI2 i t I t I t I t I t I i I 4 I i I i I i I i I i I i I 4 I i I i I i I i I t I t I t I 1 I Figure 2. Terminal connections. STADARDIZED 5962-90963 t4LITA

43、Y DIUWIUG DEIEUSE kLBCTRO!iICS SUPPLY CBWlER DAYTOU, OBI0 45444 DESC FORM 193A m 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-909b3 59 7799996 0023830 30T STADARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 4544

44、4 i Devlci typ I 01, 02 tase outline I Y I 1 I I I I I I I I Pin i Name I Pin I Nanie I Pin I Name I Pin I Name I SIZE 5962-90963 A REVISION LEVEL SHEET 1 i GND 1 26 1 VDD i 51 i VDD i 76 i VDD i I I I I I I I I 1 I 1 I I 2 i CHDo I 27 I GND I 52 I GND I 77 I REO I I 1 I 1 I 1 I I 3 1 CHDI I 28 I In

45、l8 I 53 I SCEN I 78 I RE1 I 4 i DONE i 79 i RE2 1 4 I I I I I 1 I i 29 i Inl7 i 54 i Wo I I I I I I I 8 9 10 - 11 12 13 - - I4 15 16 17 - - - 18 19 20 - - 21 22 23 - 24 VDD i 37 i GND 1 I VDD ! 38 ! VDD AD7 i 46 j 1% I I i i I t I t I i I f I i I i I -I I i I -I I -I I i I -I I i I i I i ! 25 1 GND

46、i 50 1 GND i 75 i GND /lm 1 VDD i I I I I I I I FIGURE 2. Terminal connections - Continued. DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-59b2-909b3 59 = 9999796 00238LL 246 i i I I I I I I I I I I I I I i Not used (dont

47、care) Manual scrle frctor 00 Shift O bits O1 Shift 1 bit IO Shift 2 bits 11 Shlft 3 bits Scaling mode O 1 Rmual scale (al1 parres) FFT addressing reqwnce 00 No bit-reverse (in-place FFT) O1 10 11 Auto scale (iiinual on first pass) Bit-reverse on first pass read Bit-reverse on last pass write Bit-rev

48、erse on first pS8 read and last parr write Single transform length WO Undefined OM 16 points MO 32 points MI 64 points 100 128 points 1M 256 points 110 512 points 111 1024 points Function code WMI IFFT no widow o001 Hultiply-accuulate 2 real inputs 0010 Hultiply-accurilate RE/IH inputs OM1 Hultiply-

49、iccuiulate -lex input MOO Hagnitude squared 01M Hultiply 2 real inputs MIO Hulttply RE/IH inputs O111 multiply coqlex loo0 FFT no widow 1oM FIR filter, 2 real inputs 1011 FIR adaptive 11M IFFT real window 1110 Colplex uultiply + FFT 1111 cwlex ultiply + IFFT Configuration regirter select bit O Configuration register 1 (CRI) IMO FIR filter, duil REIM input8

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