1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Technical and editorial changes throughout. 93-12-30 M. A. FRYE B Changes in accordance with N.O.R. 5962-R271-94. 94-09-08 M. A. FRYE C Drawing updated to reflect current requirements. -ro 00-09-20 R. MONNIN D Drawing updated
2、as part of 5 year review. -rrp 06-10-16 R. MONNIN REV SHET REV SHET REV STATUS REV D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/w
3、ww.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, 5 TH ORDER, SWITCHED, CAP FILTER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-13 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-9
4、1595 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E182-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR
5、 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When
6、available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 91595 01 M P X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lea
7、d finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA level
8、s and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LTC1062 5th order, switched, cap filter 02 MAX280 5th order, switched, cap fi
9、lter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in acco
10、rdance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead fi
11、nish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER C
12、OLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Total supply voltage (+VSto VS) . 18 V Input voltage at any pin -VS 0.3 V VIN +VS+ 0.3 V Power dissipation (PD) 100 mW Lead temperature range (soldering, 10 seconds) +300C Storage temper
13、ature range -65C to +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) . 130C/W 1.4 Recommended operating conditions. Positive supply voltage (+VS) +5 V Negative supply voltage (-VS) -5 V Ambient operating temperature range (TA) . -55C to +1
14、25C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contr
15、act. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBO
16、OKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Buildi
17、ng 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempt
18、ion has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
19、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as
20、specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non
21、-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case
22、 outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performanc
23、e characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgrou
24、p are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking t
25、he “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark.
26、The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be requ
27、ired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The cer
28、tificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix
29、 A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device cla
30、ss M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity r
31、etain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microci
32、rcuit group number 109 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 AP
33、R 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Power supply current I COSCpin to VS= 100 pF 1 All 7 mA 2,3 10 Filter gain AFAt fIN= 0.5fC, 3/ TA= +25C 4 All -0.3 dB At fIN=
34、fC3/ 4,5,6 -2 At fIN= 2fC3/ -28 At fIN= 4fC3/ -52 At fIN= 16 kHz, fCLK= 400 kHz, RL= 6.5 k, CL= 0.01 F, DIVIDER RATIO pin at +VS-43 Filter OUTPUT pin dc swing +VFOOUTPUT pin buffered with an external operational 1,2,3 All +3.5 V -VFOamplifier -3.5 Internal buffer section Bias current IB1 All 50 pA 2
35、,3 1000 Offset voltage VOSTA= +25C 1 01 20 mV 02 2 Voltage swing +VSWRL= 20 k 1,2,3 All +3.5 V -VSW-3.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENT
36、ER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min MaxClock section 4/ Internal oscillator
37、frequency fIOCOSCpin to VS= 100 pF 4 01 25 50 kHz 5,6 15 65 4 02 31 39 5,6 29 43 COSCpin source or sink current IOSC1,2,3 All 80 A 1/ Unless otherwise specified, +VS= +5 V, -VS= -5 V, and ac output is measured at the OUTPUT pin. 2/ The algebraic convention, whereby the most negative value is a minim
38、um and the most is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 3/ fCis the frequency where the gain is 3 db with respect to the input signal. fCLK= 100 kHz, DIVIDER RATIO pin at +VS, CL= 0.01 F, and RL= 25.78 k. 4/ The ex
39、ternal or driven clock frequency is divided by either 1, 2, or 4 depending upon the voltage at the DIVIDER RATIO pin. When the DIVIDER RATIO pin = +VS, the ratio = 1; when the DIVIDER RATIO pin = GND, the ratio = 2; when the DIVIDER RATIO pin VS, the ratio = 4. 4. VERIFICATION 4.1 Sampling and inspe
40、ction. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M
41、, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device c
42、lass M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintain
43、ed by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2)
44、TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHI
45、O 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outline P Terminal number Terminal symbol 1 FEEDBACK (FB) 2 ANALOG GROUND (AGND) 3 -VS4 DIVIDER RATIO 5 COSC6 +VS7 OUTPUT 8 B OUTPUT FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or
46、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91595 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test conditio
47、n and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with
48、 MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspec
