1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardened requirements. - ro 00-06-30 R. MONNIN B Drawing updated to reflect current requirements. - ro 03-05-28 R. MONNIN C Update boilerplate paragraphs. - ro 09-07-08 C. SAFFLE REV SHET REV SHET REV STATUS REV C C C C C C C C C C
2、C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E
3、. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, LOW GAIN, FAST SETTLING, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-01-22 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-92033 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E371-09 Provided by IHSNot for ResaleNo re
4、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consis
5、ting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN
6、. 1.2 PIN. The PIN is as shown in the following example: 5962 F 92033 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q
7、 and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA devic
8、e. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 CLC402 Low gain, operational amplifier with 14-bit settling 1.2.3 Device class designator. The device class designator is a single letter identifying the product assur
9、ance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline
10、(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual in line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device cl
11、asses Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM
12、 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) 7 V dc Output current (IO) 70 mA Power dissipation (PD) 305 mW Junction temperature (TJ) . 175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . 28C/
13、W Thermal resistance, junction-to-ambient (JA) 100C/W 1.4 Recommended operating conditions. Supply voltage (VCC) 5 V dc Gain range (AV) 1 to 10 Ambient operating temperature (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 to 300 rads (Si)/s) 300 krads 2/ 2.
14、APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DE
15、PARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL
16、-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
17、 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses
18、 above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end poi
19、nt limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMB
20、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Manageme
21、nt (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction
22、, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2
23、 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon r
24、equest. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3
25、.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marke
26、d. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in a
27、ccordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be
28、 a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate
29、of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers produ
30、ct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class
31、 M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any
32、change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at
33、the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
34、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device
35、type Limits 4/ Unit Min Max Input bias current, noninverting IBN1 01 -25 +25 A 2 -35 +35 3 -45 +45 M,D,P,L,R,F 1 -25 +25 Input bias current, average temperature coefficient, noninverting DIBN 5/ 6/ 2 01 -100 +100 nA/C 3 -250 +250 Input bias current, inverting IBI1 01 -30 +30 A 2 -40 +40 3 -50 +50 M,
36、D,P,L,R,F 1 -30 +30 Input bias current, average temperature coefficient, inverting DIBI 5/ 6/ 2 01 -100 +100 nA/C 3 -250 +250 Input offset voltage VIO1 01 -1.6 +1.6 mV 2 -2.8 +2.8 3 -2.6 +2.6 M,D,P,L,R,F 1 -1.6 +1.6 Input offset voltage, average temperature coefficient DVIO 5/ 6/ 2,3 01 -12 +12 V/C
37、Supply current, no load ICC1,2,3 01 20 mA M,D,P,L,R,F 1 20 Power supply rejection ratio PSRR -VCC= -4.5 V to 5.0 V, 1,2 01 60 dB +VCC= +4.5 V to +5.0 V 3 55 M,D,P,L,R,F 1 60 Output current +IO5/ 6/ 1 01 +45 mA 2,3 +25 -IO1 -452,3 -25 See footnotes at end of table. Provided by IHSNot for ResaleNo rep
38、roduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/
39、2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output voltage swing +VORL= 100 5/ 7/ 4,5 01 +2.8 V 6 +2.3 -VO4,5 -2.8 6 -2.3 Noninverting input resistance RIN5/ 6/ 1,2 01 85 k 3 50 Noninverting input capacitance CIN5/ 6/ 4,5,6 01 5.5 pFOutput impedan
40、ce RO5/ 6/ 1,2,3 01 0.1 Common mode rejection ratio CMRR VCM= 1.0 V 5/ 7/ 4,5 01 60 dB 6 55 Small signal bandwidth SSBW -3 dB bandwidth, 5/ 4 01 130 MHz VOUT 0.5 VPP5,6 120 Large signal bandwidth LSBW -3 dB bandwidth, 5/ 6/ VOUT 5 VPP4,5,6 01 50 MHz Gain flatness peaking GFPL 0.1 MHz to 25 MHz, 5/ 4
41、 01 0.3 dB VOUT 0.5 VPP5,6 0.4 GFPH 25 MHz, 5/ 4 0.5 VOUT 0.5 VPP5,6 0.7 Gain flatness rolloff GFR 0.1 MHz to 50 MHz, 5/ VOUT 0.5 VPP4,5,6 01 1.0 dB Linear phase deviation LPD 0.1 MHz to 50 MHz 5/ 6/ 4 01 1.0 5,6 1.2 2 nd harmonic distortion HD2 2 VPPat 20 MHz 5/ 4,5 01 -43 dBc 6 -38 3 rd harmonic d
42、istortion HD3 2 VPPat 20 MHz 5/ 4,6 01 -53 dBc 5 -50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92033 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVE
43、L C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 4/ Unit Min Max Rise and fall time tRS0.5 V step, 5/ 6/ CL 10 pF, measured 9 01 2.7 ns between 10
44、% and 90 % points 10,11 2.9 tRL0.5 V step, 5/ 6/ CL 10 pF, measured between 10 % and 90 % points 9,10,11 8.0 Settling time tSH1 V step at 5/ 6/ 0.0025 % of the final value, CL 10 pF 9,10,11 01 32 ns tSP2 V step at 5/ 6/ 0.01 % of the final value, CL 10 pF 25 tSS2 V step at 0.1 % of 5/ 6/ the final v
45、alue, CL 10 pF 15 Overshoot OS 0.5 V step, 5/ 6/ CL 10 pF 9,10,11 01 10 % Slew rate SR VOUT= 4 V step, 5/ 6/ CL 10 pF, measured at 1 V 4,5,6 01 500 V/s Equivalent input noise, total noise floor SNF 1 MHz 5/ 6/ 4,5,6 01 -155 dBm 1 Hz Equivalent input noise, total integrated noise INV 100 MHz to 150 M
46、Hz 5/ 6/ 4,5,6 01 49 V 1/ Unless otherwise specified, RL= 100 , VCC= 5 V dc, AV= +2, feedback resistor (RF) = 250 , gain resistor (RG) = 250 . 2/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the “F
47、” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Rad
48、iation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 5/ This parameter is not radiation hardened tested. 6/ Guaranteed, if not tested, to the limits specified in table I herein. 7/ This parameter is gr
