DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf

上传人:livefirmly316 文档编号:700259 上传时间:2019-01-01 格式:PDF 页数:12 大小:75.08KB
下载 相关 举报
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf_第1页
第1页 / 共12页
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf_第2页
第2页 / 共12页
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf_第3页
第3页 / 共12页
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf_第4页
第4页 / 共12页
DLA SMD-5962-92339 REV F-2009 MICROCIRCUIT LINEAR QUAD LOW POWER VIDEO BUFFER MONOLITHIC SILICON.pdf_第5页
第5页 / 共12页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make corrections to the case outline 2 pin assignments. Changes in accordance with N.O.R 5962-R052-94. 93-12-03 M. A. FRYE B Delete footnote 4/ entirely from SSBW, GFPL, GFPH, GFR, HD2, HD3 tests as specified under Table I and renumber the footno

2、tes accordingly. Delete subgroup 4 entirely from Table II. Add subgroup 4 to paragraph 4.4.1b. Changes in accordance with N.O.R 5962-R108-95. 95-04-05 M. A. FRYE C Make changes to the GFPH test as specified under Table I. Changes in accordance with N.O.R 5962-R165-95. 95-06-23 M. A. FRYE D Delete CA

3、GE 62839 and add CAGE 27014. Add footnote 4/ to SSBW, LSBW, GFPL, GFPH, GFR, HD2, and HD3 tests as specified in table I. Make editorial changes throughout. Redrawn ro 00-03-15 R. MONNIN E Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. rrp 03-10-07 R. MONNIN F Update boilerplate p

4、aragraphs. - ro 09-06-10 J. RODENBECK REV SHET REV SHET REV STATUS REV F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY RICK C. OFFICER CHECKED BY CHARLES E. BESORE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY MICHAEL A

5、. FRYE STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-01-20 MICROCIRCUIT, LINEAR, QUAD, LOW POWER, VIDEO BUFFER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-92339 SHEET

6、 1 OF 11 DSCC FORM 2233 APR 97 5962-E348-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCO

7、PE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available,

8、 a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92339 01 M C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (s

9、ee 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are m

10、arked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 CLC114 Quad, low power, video buffer 1.2.3 Device class designator. The device class des

11、ignator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certificati

12、on and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The

13、 lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS C

14、OLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 7 V dc Output current (IOUT) 35 mA Power dissipation (PD) 1.2 W Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +175C Storage temperature range .

15、-65C to +150C Thermal resistance, junction-to-case (JC): Case C 20C/W Case 2 . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case C 97C/W Case 2 . 59C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 5 V dc Ambient operating temperature (TA) . -55C to +125C 2. APPLICABL

16、E DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

17、OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103

18、 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Orde

19、r of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above th

20、e absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-923

21、39 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device

22、 manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified h

23、erein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in acco

24、rdance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation paramet

25、er limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The pa

26、rt shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product usi

27、ng this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q a

28、nd V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in

29、order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA p

30、rior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance

31、. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSC

32、C-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers

33、facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, app

34、endix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characte

35、ristics. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Input bias current IIN1 01 -5 +5 A 2 -4 +4 3 -10 +10 Output offset voltage VOSRS= 50 1 01 -5.0 +5.0 mV 2 -8.0 +8.0 3 -8.2 +8.2 TC3/ 2 01 -25 +25 nA/C Average input bias cur

36、rent drift (IIN) 3 -62 +62 TC3/ 2 01 -30 +30 V/C Average offset voltage drift (VIO) 3 -40 +40 Total supply current ISNo load 1 01 16.5 mA 2 16.0 3 17.0 Input resistance +RIN3/ 1 01 1.0 M 2 2.0 3 0.3 Output current IOUT3/ 1 01 25 mA 2 20 3 12 PSRR +VS= +4.5 V to +5.0 V, 1,3 01 48 dB Power supply reje

37、ction ratio -VS= -4.5 V to 5.0 V 2 46 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSC

38、C FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Small signal bandwidth SSBW -3 dB bandwidth, 4/ 4,6 01 135 MHz VOUT 0.5 VPP5 120 Large signal bandwidth

39、 LSBW -3 dB bandwidth, 3/ VOUT 2.0 VPP4,5,6 01 70 MHz GFPL At 0.1 MHz to 30 MHz, 4/ 4 01 0.2 dB Gain flatness peaking low VOUT 0.5 VPP5,6 0.3 GFPH 30 MHz to 200 MHz, 4/ 4,5 01 0.7 dB Gain flatness peaking high VOUT 0.5 VPP6 1.3 Gain flatness rolloff GFR 0.1 MHz to 60 MHz, 4/ 4,6 01 0.8 dB VOUT 0.5 V

40、PP5 1.0 HD2 2 VPPat 20 MHz 4/ 4,5 01 -38 dBc Second harmonic distortion 6 -36 HD3 2 VPPat 20 MHz 4/ 4,6 01 -50 dBc Third harmonic distortion 5 -45 Input noise floor SNF At 1 MHz 3/ 4,5,6 01 -153 dBm (1 Hz) Small signal gain GA RL= 100 3/ 4,5 01 0.96 V/V 6 0.95 Integral endpoint linearity ILINAt 1 V,

41、 full scale 3/ 4 01 0.6 % 5 0.5 6 1.0 Crosstalk XT At 10 MHz 3/ 5/ 4,6 01 58 dB 5 60 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBU

42、S, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Output voltage swing +VOUTRL= 100 3/ 4,5 01 +1.8 V 6 +1.

43、0 -VOUTRL= 100 3/ 4,5 -1.8 6 -1.0 Input capacitance CIN4 01 3.0 pF5,6 3/ 3.5 Output impedance ROdc 1,2 01 3.5 3 3/ 5.0 Slew rate SR Measured 1 V with 9 01 200 V/s 4 V step 10,11 3/ 180 Rise and fall time TRS 0.5 V step 3/ 9,11 01 2.8 ns 10 3.0 TRL 2 V step 3/ 9,11 7.0 10 8.0 Settling time tS2 V step

44、 at 0.1 percent 3/ 9,11 01 15 ns of the fixed value 10 20 2 V step at 0.01 percent 3/ 9,11 30 of the fixed value 10 40 Overshoot OS 0.5 V step 3/ 9 01 10 % 10,11 15 1/ Unless otherwise specified, VS= 5 V dc, AV= +1, and load resistance (RL) = 100 . 2/ The algebraic convention, whereby the most negat

45、ive value is a minimum and the most positive is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. 4/ Group A sample tested only. 5/ Three channels

46、 are driven simultaneously while observing the output of the undriven fourth channel. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LE

47、VEL F SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outlines C 2 Terminal number Terminal symbol 1 INPUT 1 NC 2 NC INPUT 1 3 INPUT 2 NC 4 NC NC 5 INPUT 3 INPUT 2 6 NC NC 7 INPUT 4 INPUT 3 8 OUTPUT 4 NC 9 -VSNC 10 OUTPUT 3 INPUT 4 11 NC NC 12 OUTPUT 2 OUTPUT 4 13 +VS-VS14 OUTPUT 1 NC 15 - OUTPUT

48、3 16 - NC 17 - OUTPUT 2 18 - NC 19 - +VS20 - OUTPUT 1 FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92339 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures sha

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1