DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf

上传人:ideacase155 文档编号:700290 上传时间:2019-01-01 格式:PDF 页数:15 大小:153.40KB
下载 相关 举报
DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf_第1页
第1页 / 共15页
DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf_第2页
第2页 / 共15页
DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf_第3页
第3页 / 共15页
DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf_第4页
第4页 / 共15页
DLA SMD-5962-93089 REV G-2009 MICROCIRCUIT HYBRID LINEAR PLUS OR MINUS 12 VOLT DUAL CHANNEL DC DC CONVERTER.pdf_第5页
第5页 / 共15页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added RHA and class K devices. Added RHA requirements. Redrew entire document. -sld 97-10-23 K.A. Cottongim B Table I; Changed for the +VOUTtest for device type 02 RHA levels L and R the min and max limit from 14 and 16 V to 11.2 and 12.8 V. For

2、the -VOUT test for device type 02 RHA levels L and R from -14 and -16 V to -11.2 and -12.8 V. -sld 98-02-04 K.A. Cottongim C Add case outlines Y and Z. Table I, IINmaximum limit, change from 4 mA to 5 mA. 99-07-12 Raymond Monnin D Made corrections to paragraph 4.3.5.a. Updated paragraph 1.2.3 to def

3、ine the five reliability class levels. Made changes to table I. -sld 01-05-21 Raymond Monnin E Figure 1, case outlines Y and Z, change the maximum D/E dimension from 1.105“ (28.07 mm“) to 1.110“ (28.19 mm) and change the R maximum dimension from 0.600“ (1.52 mm) to .065“ (1.65 mm). 05-04-18 Raymond

4、Monnin F Added paragraph 1.5 and note 2. Add paragraph 3.2.3. Table I add new note 2 for enhanced low dose rate effects (renumber remaining notes is sequence). Paragraph 4.3.5.a, add enhanced low dose rate effects. Add RHA level P to device type 02 in paragraphs 1,3, 1.5, 4.3.5 (table), table I, ans

5、 SMD bulletin. -gz 07-06-06 Robert M. Heber G Added footnote 1 to table II, under group C end-point electricals. Updated drawing paragraphs. Made correction in table I to add device type 02 for TTLinetest for the 750 s limit. -sld 09-08-26 Charles F. Saffle REV SHEET REV SHEET REV STATUS REV G G G G

6、 G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary Zahn DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF D

7、EFENSE CHECKED BY Michael C. Jones APPROVED BY Kendall A. Cottongim MICROCIRCUIT, HYBRID, LINEAR, 12 VOLT, DUAL CHANNEL, DC/DC CONVERTER DRAWING APPROVAL DATE 93-12-06 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-93089 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E381-09 Provided by IHSNot for

8、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes

9、 as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in

10、 the following example: 5962 - 93089 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devi

11、ces shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MSA2812D/883, MGA281

12、2D/883 DC-DC converter, 5 W, 12 V outputs 02 SMSA2812D DC-DC converter, 5 W, 12 V outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certific

13、ation as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class

14、 level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer spe

15、cified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be s

16、pecified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. T

17、his product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97

18、1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Dual-in-line Y See figure 1 20 Flat pack Z See figure 1 20 Flat pack with formed leads 1.2.5 Lead finish. The lead finish shall

19、be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input voltage range -0.5 V dc to +50 V dc Power dissipation (PD): Device types 01 and 02 (non-RHA) 1.9 W Device type 02 (RHA levels P, L and R) 2.0 W Output power . 5.3 W Lead soldering temperature (10 seconds) . +300C Storage temper

20、ature range -65C to +150C 1.4 Recommended operating conditions. Input voltage range +16 V dc to +40 V dc Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 9 rad(Si)/s): Device type 02 (RHA levels P, L and R) 100 krad (Si) 2/ 2. APPL

21、ICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPART

22、MENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - Li

23、st of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of

24、precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absol

25、ute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end-point limits for th

26、e noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rad(Si)/s. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CEN

27、TER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the perf

28、ormance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-3853

29、4 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as spe

30、cified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be main

31、tained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and

32、 shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in

33、 accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall ma

34、intain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be mainta

35、ined under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (o

36、riginal copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this

37、drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

38、 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall

39、be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of

40、method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

41、thout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL = 0unl

42、ess otherwise specified Group A subgroups Device types Limits Unit Min Max Output voltage +VOUTIOUT= 208 mA 1 01,02 11.88 12.12 V 2,3 01,02 11.52 12.48 P,L,R 1,2,3 02 11.2 12.8 -VOUT1 01,02 -11.76 -12.24 2,3 01,02 -11.04 -12.96 P,L,R 1,2,3 02 -11.2 -12.8 Output current 3/ IOUTVIN= 16 V dc to 40 V dc

43、 1,2,3 01,02 0.0 333 mA P,L,R 1,2,3 02 0.0 333 VOUToutput ripple voltage (VOUT) VRIPIOUT= 208 mA, B.W. = 10 kHz to 2 MHz 1 01 140 mV p-p 02 300 2,3 01 250 02 500 P,L,R 1,2,3 02 2 V p-p VOUTline regulation +VOUTVRLINEIOUT= 208 mA, VIN= 16 V dc to 40 V dc 1,2,3 01 50 mV 02 100 P,L,R 1,2,3 02 100 -VOUT

44、1,2,3 01 180 02 200 P,L,R 1,2,3 02 400 VOUTload regulation +VOUTVRLOADIOUT= 0 to 208 mA, both outputs changed simultaneously 1,2,3 01,02 50 mV P,L,R 1,2,3 02 100 -VOUT1,2,3 01,02 200 P,L,R 1,2,3 02 400 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitte

45、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc

46、0.5 V, CL = 0unless otherwise specified Group A subgroups Device types Limits Unit Min Max Input current IINIOUT= 0, inhibit pin (pin 1) = 0 V dc 1,2,3 01,02 5 mA P,L,R 02 25 IOUT= 0, inhibit pin (pin 1) = open 01 58 02 63 P,L,R 02 100 Input ripple current IRIPIOUT= 208 mA, LIN = 2 H, B. W. = 10 kHz

47、 to 10 MHz 1 01 100 mA p-p 02 200 2,3 01 150 02 300 P,L,R 1,2,3 02 500 Efficiency Eff IOUT= 208 mA 1 01 69 % 02 67 2,3 01 67 02 65 P,L,R 1,2,3 02 60 Isolation ISO 500 V dc, Input to output, input to case or output to case, TC= +25C 1 01,02 100 M P,L,R 02 100 Short circuit internal power dissipation

48、PDPD= PIN- total POUT1 01,02 1.7 W 2,3 1.9 P,L,R 1,2,3 02 2.0 Switching frequency FSIOUT= 208 mA 4 01,02 450 600 kHz 5,6 01,02 400 660 P,L,R 4,5,6 02 400 660 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93089 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance cha

展开阅读全文
相关资源
猜你喜欢
  • ANSI T1.216-1998 Telecommunications – Integrated Services Digital Network (ISDN) Management – Basic Rate Physical Layer《电信.综合服务数字网络管理(ISDN).基础速率物理层》.pdf ANSI T1.216-1998 Telecommunications – Integrated Services Digital Network (ISDN) Management – Basic Rate Physical Layer《电信.综合服务数字网络管理(ISDN).基础速率物理层》.pdf
  • ANSI T1.218-1999 Telecommunications – ISDN Management – Data Link and Network Layer《电信.ISDN管理.数据链路和网络层》.pdf ANSI T1.218-1999 Telecommunications – ISDN Management – Data Link and Network Layer《电信.ISDN管理.数据链路和网络层》.pdf
  • ANSI T1.219-1991 Telecommunications – ISDN Management – Overview and Principles《电信.综合业务数字网管理.概述和原理》.pdf ANSI T1.219-1991 Telecommunications – ISDN Management – Overview and Principles《电信.综合业务数字网管理.概述和原理》.pdf
  • ANSI T1.221-1995 Telecommunications – Operations Administration Maintenance and Provisioning (OAM&P) – In-Service Nonintrusive Measurement Device (INMD) – Voice Service Measuremen.pdf ANSI T1.221-1995 Telecommunications – Operations Administration Maintenance and Provisioning (OAM&P) – In-Service Nonintrusive Measurement Device (INMD) – Voice Service Measuremen.pdf
  • ANSI T1.230-1994 Telecommunications – Telecommunications Charge Card and Billed Number Screening Validation Message Components《电信.电信计费卡和记帐号码甄别有效信息内容》.pdf ANSI T1.230-1994 Telecommunications – Telecommunications Charge Card and Billed Number Screening Validation Message Components《电信.电信计费卡和记帐号码甄别有效信息内容》.pdf
  • ANSI T1.239-1994 Telecommunications -- Integrated Services Digital Network (ISDN) Management – User-Network Interface Protocol Profile《电信.集成服务数字网络管理.用户和网络之间的接口协议记录》.pdf ANSI T1.239-1994 Telecommunications -- Integrated Services Digital Network (ISDN) Management – User-Network Interface Protocol Profile《电信.集成服务数字网络管理.用户和网络之间的接口协议记录》.pdf
  • ANSI T1.241-1994 Telecommunications -- Integrated Srevices Digital Network (ISDN) Management -- Service Profile Verification and Service Profile Management -- ISDN Interface Manage.pdf ANSI T1.241-1994 Telecommunications -- Integrated Srevices Digital Network (ISDN) Management -- Service Profile Verification and Service Profile Management -- ISDN Interface Manage.pdf
  • ANSI T1.245-1997 Telecommunications - Directory Service for Telecommunications Management Network (TMN) and Synchronous Optical Network (SONET)《电信.电信管理网络(TMN)和同步光纤网络(SONET)的目录服务》.pdf ANSI T1.245-1997 Telecommunications - Directory Service for Telecommunications Management Network (TMN) and Synchronous Optical Network (SONET)《电信.电信管理网络(TMN)和同步光纤网络(SONET)的目录服务》.pdf
  • ANSI T1.247-1998 Telecommunications – Operations Administation Maintenance and Provisioning (OAM&P) – Performance Management Functional Area Services and Information Model for Intle.pdf ANSI T1.247-1998 Telecommunications – Operations Administation Maintenance and Provisioning (OAM&P) – Performance Management Functional Area Services and Information Model for Intle.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1