1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added RHA and class K devices. Added RHA requirements in 4.3.5. Redrew entire document. -sld 98-09-18 K. A. Cottongim B Add case outlines Y and Z. Table I, IINmaximum limit , change from 4 mA to 5 mA. 99-07-12 Raymond Monnin C Correct paragraph 1
2、.3, power dissipation. Changes to table I to standardize test nomenclature and conditions. Correct paragraph 4.3.5.a. 01-02-06 Raymond Monnin D Figure 1, case outlines Y and Z, change the maximum D/E dimension from 1.105“ (28.07 mm“) to 1.110“ (28.19 mm) and change the R maximum dimension from 0.600
3、“ (1.52 mm) to .065“ (1.65 mm). 05-04-18 Raymond Monnin E Added paragraph 1.5 and note 2. Table 1, added new note 2 for enhanced low dose rate effects (renumber remaining notes in sequence). Paragraph 4.3.5.a, added enhanced low dose rate effects. Added radiation hardened level P. -sld 07-06-04 Robe
4、rt M. Heber REV SHEET REV SHEET REV STATUS REV E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Gary Zahn DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ THIS DRAWIN
5、G IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Kendall A. Cottongim MICROCIRCUIT, HYBRID, LINEAR, 15-VOLT, SINGLE CHANNEL, DC-DC CONVERTER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-12-06 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-93094 SHEET 1 OF 13 DSCC FO
6、RM 2233 APR 97 5962-E437-07Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. Thi
7、s drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected
8、 in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 93094 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation ha
9、rdness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. See 4.3.5. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device
10、 type Generic number Circuit function 01 MSA2815S/883, MGA2815S DC-DC converter, 5 W, +15 V output 02 SMSA2815S DC-DC converter, 5 W, +15 V output 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by t
11、he requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use
12、 in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections wi
13、th a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to th
14、e requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is de
15、fined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 8 Dual-in-line Y See f
16、igure 1 20 Flat pack Z See figure 1 20 Flat pack with formed leads 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENSE SUPP
17、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage range -0.5 V dc to +50 V dc Power dissipation (PD): Device types 01 and 02 (non-RHA) 2 W Device type 02 (RHA levels P, L and R). 3 W Output power . 5.2 W Lead so
18、ldering temperature (10 seconds) +300C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Input voltage range +16 V dc to +40 V dc Case operating temperature range (TC). -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 9 rad(Si)/s): Device ty
19、pe 02 (RHA levels P, L and R). 100 krad (Si) 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents
20、are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outl
21、ines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Orde
22、r Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and re
23、gulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space environment
24、and may demonstrate enhanced low dose rate effects. Radiation end-point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rad(Si)/s. Provided by IHSNot for ResaleNo reproduction or networking permitted without li
25、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be
26、 in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests an
27、d inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and p
28、hysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on fig
29、ure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall b
30、e the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar
31、PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type
32、listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 C
33、ertificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herei
34、n. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as mod
35、ified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method
36、1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases
37、, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electri
38、cal parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION
39、 LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device types Limits Unit unless otherwise specified Min Max 1 14.85 15.15 IOUT= 333 mA 2,3 01,02 14.40 15.60 Output voltage V
40、OUTP, L, R 1,2,3 02 13.8 16.2 V dc VIN= 16 V dc to 40 V dc 1,2,3 01, 02 333 Output current IOUTP, L, R 1,2,3 02 333 mA 01 170 1 02 600 01 250 IOUT= 333 mA, BW = 10 kHz to 2 MHz 2,3 02 900 VOUTripple voltage VRIPP, L, R 1,2,3 02 1350 mVp-p VIN=16 V dc to 40 V dc, 1,2,3 01,02 50 VOUTline regulation VR
41、LINEIOUT= 333 mA P, L, R 1,2,3 02 100 mV IOUT= 0 to 333 mA 1,2,3 01,02 50 VOUTload regulation VRLOADP, L, R 1,2,3 02 100 mV IOUT= 0 A, Inhibit (see figure 2) = 0 1,2,3 01,02 5 P, L, R 1,2,3 02 12 01 44 IOUT= 0 A, Inhibit (see figure 2) = open 1, 2, 3 02 60 Input current IINP, L, R 1,2,3 02 100 mA 01
42、 100 1 02 200 01 150 IOUT= 333 mA, BW = 10 kHz to 10 MHz 2,3 02 300 IINripple current IRIPP, L, R 1,2,3 02 500 mAp-p See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENS
43、E SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device types Limits Unit unless otherwise specified Min
44、 Max 01 71 1 02 69 01 69 IOUT= 333 mA 2,3 02 65 Efficiency Eff P, L, R 1,2,3 02 61 % Input to output or any pin to case except the case ground (see figure 2) at 500V dc 1 01,02 100 Isolation ISO TC= +25C P, L, R 1 02 100 M No effect on dc performance, TC= +25C 4 01,02 500 Capacitive load 3/ 4/ CLP,
45、L, R 4 02 500 F 1 1.8 Short circuit 2,3 01,02 2.0 Short circuit power dissipation PDP, L, R 1,2,3 02 3 W 4 450 600 IOUT= 333 mA 5,6 01,02 400 660 Switching frequency FSP, L, R 4,5,6 02 400 700 kHz 01 -500 +500 4 02 -1000 +1000 01 -1500 +1500 50% load to/from 100% load 5,6 02 -3000 +3000 VOUTstep loa
46、d transient 5/ VTLOADP, L, R 4,5,6 02 -4000 +4000 mV pk See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93094 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L
47、EVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device types Limits Unit unless otherwise specified Min Max 01 500 4 02 1000 01 3500 50% load to/from 100% load 5,6
48、02 4500 s VOUTstep load transient recovery 5/ 6/ TTLOADP, L, R 4,5,6 02 5 ms Input step 16 V dc to/from 40 V dc, IOUT= 333 mA 4,5,6 01,02 -500 +500 VOUTstep line transient 4/ 7/ VTLINEP, L, R 4,5,6 02 -1500 +1500 mV pk Input step 16 V dc to/from 40 V dc, IOUT= 333 mA 4,5,6 01,02 1.3 VOUTstep line transient recovery 4/ 6/ 7/ TTLINEP, L, R 4,5,6 02 2.6 ms IOUT = 333 mA 4,5,6 01,02 500 Start-up overshoot
