DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf

上传人:inwarn120 文档编号:700441 上传时间:2019-01-01 格式:PDF 页数:14 大小:94.33KB
下载 相关 举报
DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf_第1页
第1页 / 共14页
DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf_第2页
第2页 / 共14页
DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf_第3页
第3页 / 共14页
DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf_第4页
第4页 / 共14页
DLA SMD-5962-94527 REV E-2004 MICROCIRCUIT LINEAR CMOS QUAD SERIAL INTERFACE 8-BIT D A CONVERTER MONOLITHIC SILICON《硅单片 四重串联接口8位交流 直流转变器 氧化物半导体线性微型电路》.pdf_第5页
第5页 / 共14页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R035-96. 96-01-11 M. A. Frye B Changes in accordance with NOR 5962-R013-99. 98-10-28 R. Monnin C Changes in accordance with NOR 5962-R015-99 98-11-25 R. Monnin D Changes to digital input capacitance and voltage

2、 output slew rate tests in table I. Update boilerplate. Redrawn. -rrp 99-03-01 R. Monnin E Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. -rrp 04-05-25 R. Monnin REV SHET REV SHET REV STATUS REV E E E E E E E E E E E E E OF SHEETS

3、SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Sandra B. Rooney DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUI

4、T, LINEAR, CMOS, QUAD, SERIAL INTERFACE, 8-BIT D/A CONVERTER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-01-06 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-94527 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E286-04 Provided by IHSNot for ResaleNo repro

5、duction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consistin

6、g of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

7、1.2 PIN. The PIN is as shown in the following example: 5962 - 94527 01 M E X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q

8、and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device

9、. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Relative accuracy 01 MAX500A Quad serial 8-bit D/A converter 1/2 LSB 02 MAX500B Quad serial 8-bit D/A converter 1 LSB 1.2.3 Device class designator. The device class desig

10、nator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification

11、 and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The l

12、ead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COL

13、UMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ VDDto AGND . -0.3 V dc, +17 V dc VDDto DGND . -0.3 V dc, +17 V dc VSSto DGND . -7 V dc, VDD+ 0.3 V dc VDDto VSS-0.3 V dc, +24 V dc Digital input voltage to DGND . -0.3 V dc, VDD+ 0.3 V dc VREFto AG

14、ND -0.3 V dc, VDD+ 0.3 V dc VOUTto AGND 2/ . -0.3 V dc, VDD+ 0.3 V dc Power dissipation (PD), TA= +70C 3/ : Case outline E . 800 mW Case outline 2 727 mW Storage temperature range . -65C to +150C Lead temperature (soldering, 10 sec) . +300C Junction temperature (TJ) +150C Thermal resistance, junctio

15、n-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case outline E . 100C/W Case outline 2 110C/W 1.4 Recommended operating conditions. Positive supply voltage (VDD): Dual supply operation +11.4 V dc to +16.5 V dc Single supply operation . +14.25 V dc to +15.75 V dc Ambient

16、 operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these document

17、s are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Compone

18、nt Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Documen

19、t Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The outputs may be shorted to AGND provid

20、ed that the power dissipation of the package is not exceeded. Typical short circuit current to AGND is 25 mA. 3/ Derate above TA= +70C at 10 mW/C for case outline E, 9.09 mW/C for case outline 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

21、RD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes prece

22、dence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or

23、as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B d

24、evices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The cas

25、e outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Un

26、less otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups sp

27、ecified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space lim

28、itations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PR

29、F-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device

30、classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved so

31、urce of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for d

32、evice class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered

33、to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For devic

34、e class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device c

35、lass M devices covered by this drawing shall be in microcircuit group number 80 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O

36、HIO 43216-5000 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max STATIC PERFORMANCE DUAL SUPPLY SPECIFICATIONS Resolution RES 1, 2, 3 All

37、 8 Bits Total unadjusted error BTVDD= 15 V 5% VREF= 10 V 1, 2, 3 01 1 LSB 02 2 Differential nonlinearity DNL Guaranteed monotonic 1, 2, 3 All 1 LSB Zero code error BPOE1 01 15 mV 02 20 2, 3 01 20 02 30 REFERENCE INPUT Reference input range VREF1, 2, 3 All 2 VDD- 4 V Reference input resistance RINPin

38、s VREFCand VREFD1, 2, 3 All 11 k Pin VREFA/B5.5 Reference input capacitance CREFINCode dependent 2/ 4 All 100 pF Channel-to-channel isolation - 2/ 3/ 4 All -60 dB AC feedthrough FT 2/ 3/ 4 All -70 dB DIGITAL INPUTS Digital input high voltage VIH1, 2, 3 All 2.4 V Digital input low voltage VIL1, 2, 3

39、All 0.8 V Digital output high voltage VOHIOUT= -1 mA, SRO only 1, 2, 3 All VDD- 1 V Digital output low voltage VOLIOUT= +1 mA, SRO only 1, 2, 3 All 0.4 V Digital input leakage current IILExcluding LOAD 4/ 1, 2, 3 All 1 A LOAD = 0 V 4/ 30 Digital input capacitance CDIGIN2/ 1, 2, 3 All 8 pF See footno

40、tes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performan

41、ce characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DYNAMIC PERFORMANCE Voltage output slew rate 2/ 4 All 3 V/s VOUTsettling time tSTo 1/2 LSB, VREF= 10 V, VDD= +15 V, 2 k in parallel with 100 pF load. S

42、ee figure 3. 2/ 9 All 4 s Output load resistance ROLVOUT= 10 V 1, 2, 3 All 2 k POWER SUPPLIES DUAL SUPPLY SPECIFICATIONS Positive supply voltage VDDFor specified performance 1, 2, 3 All 11.4 16.5 V Positive supply current IDDOutputs unloaded 1 All 10 mA 2, 3 12 Negative supply current ISSOutputs unl

43、oaded 1 All -9 mA 2, 3 -10 SWITCHING CHARACTERISTICS THREE-WIRE MODE 5/ SDA valid to SCL setup tS1See figure 3. 9 All 150 ns SDA valid to SCL hold tHSee figure 3. 9 All 0 ns SCL high time t1See figure 3. 9 All 350 ns SCL low time t2See figure 3. 9 All 350 ns LOAD pulse width tLDWSee figure 3. 9 All

44、150 ns LOAD delay from SCL tLDSSee figure 3. 9 All 150 ns LDAC pulse width tLDACSee figure 3. 9 All 150 ns SRO output delay tD1CLOAD= 50 pF See figure 3. 9 All 150 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

45、DARD MICROCIRCUIT DRAWING SIZE A 5962-94527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device

46、 type Limits Unit Min Max SWITCHING CHARACTERISTICS TWO-WIRE MODE 5/ SDA valid to SCL hold tHSee figure 3. 9 All 0 ns SCL high time t1See figure 3. 9 All 350 ns SCL low time t2See figure 3. 9 All 350 ns LDAC pulse width tLDACSee figure 3. 9 All 150 ns SCL valid to SDA setup tS1Start condition See fi

47、gure 3. 9 All 150 ns SDA valid to SCL setup tS2Start condition See figure 3. 9 All 100 ns SDA valid to rising SCL tS3See figure 3. 9 All 125 ns SRO output delay tD1CLOAD= 50 pF See figure 3. 9 All 150 ns STATIC PERFORMANCE SINGLE SUPPLY SPECIFICATIONS Resolution RES 6/ 1, 2, 3 All 8 Bits Total unadj

48、usted error BTVDD= 15 V 5% VREF= 10 V 6/ 1, 2, 3 01 1 LSB 02 2 Differential nonlinearity DNL Guaranteed monotonic 6/ 1, 2, 3 All 1 LSB Zero code error BPOE6/ 1 01 15 mV 02 20 2, 3 01 20 02 30 POWER SUPPLIES SINGLE SUPPLY SPECIFICATIONS Positive supply voltage VDDFor specified performance 6/ 1, 2, 3 All 14.25 15.75 V Positive supply current IDDOutputs unloaded 6/ 1 All 10 mA 2, 3 12 See footnotes at end of table. Provided by IHSNot fo

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1