1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline X. Technical and editorial changes throughout. 95-09-28 M. A. FRYE B Drawing being updated to reflect current requirements. - ro 00-12-13 R. MONNIN C Drawing updated as part of 5 year review. -rrp 06-12-13 R. MONNIN REV SHET REV
2、SHET REV STATUS REV C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY MARCIA KELLEHER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY SANDRA B. ROONEY COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTM
3、ENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, STEP-UP, SWITCHING VOLTAGE REGULATOR, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-02-28 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-94540 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E228-06 Provid
4、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product a
5、ssurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) le
6、vels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94540 01 M H X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RH
7、A designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash
8、 (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX630 CMOS, low power, step-up switching regulator 1.2.3 Device class designator. The device class designator is a single letter identif
9、ying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38
10、535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X CDFP3-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as
11、 specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321
12、8-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (+VS) . 18 V Output current (LX) 525 mA peak Output current (LBD) . 50 mA Output voltage (LX, LBD) . 18 V Power dissipation (PD): Case outlines H and X 421 mW 2/ Case outline P 640 mW 3/ Storage tem
13、perature range -65C to +150C Junction temperature (TJ) +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC): Case outlines H and X 85C/W Case outline P 55C/W Thermal resistance, junction-to-ambient (JA): Case outlines H and X 190C/W Case outline P 125C/W 1.4
14、 Recommended operating conditions. Supply voltage range (+VS) . 2.0 V dc to 16.5 V dc Input voltage, LBR, CX, IC, and VFB . - 0.3 V VS + 0.3 V Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specif
15、ication, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Spe
16、cification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings
17、. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the tex
18、t of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the d
19、evice. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate at 5.26 mW/C above 70C. 3/ Derate at 8.00 mW/C above 70C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5
20、962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the
21、 device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as spec
22、ified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be
23、in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation
24、parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking.
25、 The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA prod
26、uct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device clas
27、ses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufactu
28、rer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DS
29、CC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conf
30、ormance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification
31、 to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufac
32、turers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 76 (see MIL-PRF-385
33、35, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance ch
34、aracteristics. Test Symbol Conditions -55C TA +125C +VS= +5.0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply voltage VSStart-up 1 01 1.8 V Internal reference voltage VREF1 01 1.29 1.33 V 2,3 1.25 1.37 Switch current ISWVLX= 400 mV, TA= +25C 1 01 75 mA VLX= 1.0
35、V, TA= +25C 100 Supply current ISILX= 0 mA 1 01 125 A 2,3 200 Output voltage VOUTR1 = 533 k, 1/ 1 01 14.30 15.70 V R2 = 51 k 2,3 14.0 16.0 Line regulation VRLINE5 V +VS +10 V, 1/ R1 = 533 k, R2 = 51 k 1,2,3 01 -1.0 +1.0 %V Load regulation VRLOADIL= 1 mA to 10 mA, 1/ R1 = 533 k, R2 = 51 k 1,2,3 01 -0
36、.2 +0.2 %V Reference set internal pull-down resistance RICVIC= VS1 01 0.5 10 M 2,3 0.3 10 Reference set internal voltage threshold VIC1,2,3 01 0.2 1.3 V Switch leakage current pull-down resistance ICOVLX= 16.5 V 1 01 1.0 A 2,3 30.0 Supply current (Shut down) ISO1 01 1.0 A 2,3 10.0 Low battery bias c
37、urrent ILBRTA= +25C 1 01 10 nA See end of table for footnote. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM
38、2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C +VS= +5.0 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Low battery detector output current ILBDVLBD= 0.4 V, VLBR= 1.1 V 1,2,3 All 250 A Low battery detector o
39、utput leakage ILBDOVLBD= 16.5 V, VLBR= 1.4 V, TA= +25C 1 01 5.0 A VFBinput bias current IFBTA= +25C 1 01 10 nA 1/ R1 and R2 give a typical output voltage of 15 V. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with M
40、IL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Scr
41、eening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on
42、 all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the pre
43、paring or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table
44、II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines H and X P
45、Terminal number Terminal symbol 1 NC LBR 2 LBR CX 3 CX LX 4 LX GND 5 GND +VS6 NC IC7 +VSVFB8 ICLBD 9 VFB- 10 LBD - NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A
46、 5962-94540 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device ma
47、nufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
48、request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V
