1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Drawing being updated to reflect current requirements. - ro 00-12-15 R. MONNINREVSHEETREVSHEETREV STATUS REV AAAAAAAAAAAAOF SHETS SHET 12345678910112PMIC N/A PREPARED BY RICK OFFICERDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BY
2、RAJESH PITHADIACOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMICHAEL FRYEMICROCIRCUIT, LINEAR, WIDEBAND, LOWNOISE, VOLTAGE FEEDBACK OPERATIONALAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-01-24AMPLIFIER, MONOLITHIC SILICONAM
3、SC N/AREVISION LEVELASIZEACAGE CODE672685962-94597SHEET1 OF 12DSCC FORM 2233APR 97 5962-E092-01DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWI
4、NGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of cas
5、e outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 94597 01 M P XG7EG7E G7EG7E G7EG7EG7EG7E G7E
6、G7E G7EG7EG7E G7E G7E G7E G7E G7E Federal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38
7、535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) iden
8、tify the circuit function as follows:Device type Generic number Circuit function01 CLC426 Wideband, low noise, voltage feedbackoperational amplifier1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requ
9、irements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-ST
10、D-1835 and as follows:Outline letter Descriptive designator Terminals Package styleP GDIP1-T8 or CDIP2-T8 8 Dual-in-line1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reprod
11、uction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage (VS) .G727 V dcOutput current (IOUT) 96 mACommon mode
12、input voltage (VCM) .G72VSDifferential input voltage (VID) G7210 VPower dissipation (PD) 1.3 WLead temperature (soldering, 10 seconds) .+300G71CJunction temperature (TJ) .+200G71CStorage temperature range .-65G71C to +150G71CThermal resistance, junction-to-ambient (G54JC) 45G71C/WThermal resistance,
13、 junction-to-ambient (G54JA) 135G71C/W1.4 Recommended operating conditions.Supply voltage (VS) .G725 V dcGain range (AV) G74 +2 V/V, -1 V/V with external compensationAmbient operating temperature range (TA) .-55G71C to +125G71C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handb
14、ooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement the
15、reto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKS
16、DEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4
17、D, Philadelphia, PA 19111-5094.)1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
18、-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET4DSCC FORM 2234APR 972.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex tof this drawing takes precede
19、nce. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as mod
20、ified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices a
21、nd as specifiedherein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outline(s). The case outline(s)
22、 shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post irr
23、adiation parameter limits are as specified in table I and shall apply over thefull ambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Mar
24、king. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-
25、“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certifi
26、cation mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a Q
27、ML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of comp
28、liance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7
29、Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or fordevice class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M. For device clas
30、s M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to re
31、view the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 49 (se
32、e MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance ch
33、aracteristics.Test SymbolConditions 1/-55G71C G64 TAG64 +125G71Cunless otherwise specifiedGroup AsubgroupsDevicetypeLimits 2/ UnitMin MaxStatic and dc tests.Input bias currentIIN101-25+25G50A2-30303-8+8Input offset currentIIO3/ 101-3+3G50A2-553-10+10Input offset voltageVIORS= 50 G3A101-2+2mV2,3 -3 +
34、3Average input biascurrent driftTC(IIN)TA= +125G71C, -55G71C 3/2,3 01 -800 +800 nA/G71CAverage input offsetvoltage driftTC(VIO)TA= +125G71C, -55G71C 3/2,3 01 -10 +10 G50V/G71CAverage input offsetcurrent driftTC(IIO)TA= +125G71C, -55G71C 3/2,3 01 -80 +80 nA/G71CSupply currentISRL= G661,2 01 12 mA315P
35、ower supply rejectionratioPSRR+VS= +4.0 V to +5.0 V,10165 dB-VS= -4.0 V to 5.0 V2,3 60Common mode rejectionmodeCMRRVCM= G721 V 3/40162 dB5,6 57Open loop gainAOL40160 dB5,6 54See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
36、,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics Continued.Test SymbolConditions 1/-55G71C G64 TAG64 +125G71Cunless otherwise specifiedGroup AsubgroupsDevicetyp
37、eLimits 2/ UnitMin MaxFrequency domain testsSmall signal bandwidth SSBW -3 dB bandwidth, 4,6 01 90 MHzVOUT 0.5 VPP545Large signal bandwidth LSBW -3 dB bandwidth, 3/ 4,6 01 25 MHzVOUT 5.0 VPP518Gain flatness peakinghighGFPH DC to 200 MHz, 4,5 01 2.0 dBVOUTG64 0.5 VPP64.0Gain flatness rolloff GFR DC t
38、o 30 MHz, 4 01 0.6 dBVOUTG64 0.5 VPP51.5608Gain bandwidth product GBWPVOUTG64 0.5 VPP3/4,6 01 170 MHz590Linear phase deviation LPD DC to 30 MHz, 3/ 4,6 01 1.0 DegreesVOUTG64 1.0 VPP51.5Distortion and noise testsSecond harmonicdistortionHD21 VPPat 10 MHz4,6 01 -52 dBc5-45Third harmonicdistortionHD31
39、VPPat 10 MHz4,6 01 -58 dBc5-48Input noise voltage VN At 1 MHz to 100 MHz 3/ 401 2.0nV Hz5,6 2.5Input noise current ICN At 1 MHz to 100 MHz 3/ 4,5 01 3.0pA Hz65.2See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMIC
40、ROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics Continued.Test SymbolConditions 1/-55G71C G64 TAG64 +125G71Cunless otherwise specifiedGroup AsubgroupsDevicetypeLimits 2/ Un
41、itMin MaxTiming testsRise and fall timetS1 V step 3/ 9,11 01 3.5 ns10 8.0Slew rate SR Measured G720.5 V with 3/ 4 01 300 V/G50sG722.5 V step, AV= +25,6 200Settling timetS2 V step at 0.05% of 3/ 9,11 01 20 nsthe final value 10 30Overshoot OS 1 V step 3/ 9,10 01 15 %11 25Performance testsCommon mode i
42、nputresistanceRINC3/ 4,5 01 250 kG3A6 100Differential mode inputresistanceRIND3/ 4,5 01 50 kG3A62Common mode inputcapacitanceCINC3/ 4,5,6 01 3 pFDifferential mode inputcapacitanceCIND3/ 4,5,6 01 3 pFOutput voltage rangeVOUTRL= G66 3/1,2 01 -3.5 +3.5 V3 -3.2 +3.2VOUTLRL= 100 G3A 3/1,2 -3.2 +3.23 -1.2
43、 +1.2See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94597DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET8DSCC FORM 2234APR 97TABLE I. Electrical performa
44、nce characteristics Continued.Test SymbolConditions 1/-55G71C G64 TAG64 +125G71Cunless otherwise specifiedGroup AsubgroupsDevicetypeLimits 2/ UnitMin MaxPerformance test continued.Common mode inputvoltage rangeCMIR 3/ 1,2 01 -3.5 +3.5 V3 -3.2 +3.2Output currentIOUT3/ 1,2 01 -50 +50 mA3-18+181/ Unles
45、s otherwise specified, VS= G725 V dc, AV= +2, load resistance (RL) = 100 G3A, and feedback resistance (RF) = 100 G3A.2/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only. Negativecurrent shall be defined as conventional current flow out of a devic
46、e terminal.3/ If not tested, shall be guaranteed to the limits specified in table I herein.4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Qu
47、ality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in acc
48、ordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level controland shall be made available to the preparing or acquiring activity upon request
