1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R 5962-R029-96. 96-01-09 M. A. FRYE B Drawing updated to reflect current requirements. -ro 00-12-18 R. MONNIN C Drawing updated as part of 5 year review. -rrp 06-10-11 R. MONNIN REV SHET REV SHET REV STATUS REV C C
2、C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY MARCIA B. KELLEHER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY
3、MICHAEL A. FRYE MICROCIRCUIT, LINEAR, +5 V, +12 V, +15 V STEP-UP, CURRENT MODE, PWM VOLTAGE REGULATOR, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-06-21 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-94621 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E183
4、-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two
5、 product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assuranc
6、e (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94621 01 M P X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing numbe
7、r 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designat
8、or. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX731 +5 V, step-up, current-mode, PWM voltage regulator 02 MAX732 +12 V, step-up, current-mode, PWM voltage regulator 03 MAX7
9、33 +15 V, step-up, current-mode, PWM voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 comp
10、liant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P
11、 GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted withou
12、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (+VS, LX to GND) 17 V, -0.3 V Output voltage (VOUT) 25 V Input voltage, (VIN)
13、, SHDN , SS, CC . -0.3 to (+VS+ 0.3 V) LX output current . 1.5 A peak Reference current 2.5 mA Power dissipation (PD), TA= 70C: Case outline P 640 mW 2/ Case outline 2 727 mW 3/ Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) 300C Ther
14、mal resistance, junction-to-case (JC): Case outlines P and 2 55C/W Thermal resistance, junction-to-ambient (JA): Case outline P 125C/W Case outline 2 110C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA). -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specificat
15、ion, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-3853
16、5 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Draw
17、ings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of pre
18、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolu
19、te maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate at 8.00 mW/C for TA= 70C. 3/ Derate at 9.09 mW/C for TA= 70C. Provided by IHSNot for ResaleNo reproduction or networking permitted without li
20、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MI
21、L-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535,
22、 appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device
23、class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the el
24、ectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tes
25、ts for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the opti
26、on of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certificatio
27、n/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compl
28、iance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6
29、.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-
30、PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of ch
31、ange for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the a
32、cquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing
33、shall be in microcircuit group number 76 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5
34、 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxOutput voltage VOUT+VS= 2.7 V to 4.65 V, 3/ 0 mA ILOAD 200 mA 1,2,3 01 4.75 5.25 V +VS= 4.5 V to 9.3 V, 0 mA
35、ILOAD 150 mA 02 11.40 12.60 +VS= 6 V to 9.3 V, 0 mA ILOAD 200 mA 11.40 12.60 +VS= 4.5 V to 11 V, 0 mA ILOAD 100 mA 03 14.25 15.75 +VS= 6 V to 11 V, 0 mA ILOAD 125 mA 14.25 15.75 Input voltage range VINR1,2,3 01 2.7 4.65 V 02 4.0 9.3 03 4.0 11.0 Standby current ISBSHDN = 0 V, entire current 1,2,3 All
36、 100 A Supply current ISIncludes switch current 1,2,3, 01 4.0 mA 02,03 3.0 Oscillator frequency fO1,2,3 01 125 215 kHz 02,03 130 210 Shutdown input threshold voltage VISTVIH1,2,3 All 2.0 V VIL0.25 Shutdown input leakage current IILS1,2,3 All 1.0 A Undervoltage lockout voltage VUVL1,2,3 02,03 4.0 V R
37、eference voltage VREF1,2,3 All 1.15 1.30 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6
38、DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxOutput current IOUT1,2,3 01 200 mA Minimum start-up input voltage VISUILOAD= 200 mA 1,2,3 01 2.5 V 1
39、/ Circuit will regulate properly with input voltage as high as 5.25 V due to voltage drop across the external diode. 2/ Unless otherwise specified, +VS= +3 V for device type 01, +VS= +5 V for device types 02 and 03, GND = 0 V, and ILOAD= 0 mA. 3/ Capacitors used in automatic test setup may be differ
40、ent from value suggested. Capacitor suggested values are: +VSto GND is 150 F and 0.1 F for all device types. VOUTto CC is 0.15 F for all device types. VREFto GND is 0.01 F for device types 02 and 03 and 4.7 F for device type 01. Output to GND is 300 F for device types 02 and 03 and 150 F for device
41、type 01. CC to GND is 2200 F for device types 02 and 03, 0.15 F for device type 01, SS to GND is 0.1 F for device types 02 and 03 and 0.15 F for device type 01. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL
42、-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Scree
43、ning. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on a
44、ll devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prepa
45、ring or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II
46、 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device types 01, 02, and 03 Case outlines
47、 P 2 Terminal number Terminal symbol 1 SHDN SHDN 2 VREFNC 3 SS NC 4 CC VREF5 GND NC 6 LX NC 7 VOUTSS 8 +VSNC 9 - CC 10 - GND 11 - GND 12 - GND 13 - NC 14 - NC 15 - NC 16 - LX 17 - NC 18 - VOUT19 - NC 20 - +VSNC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduct
48、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94621 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 Terminal symbol Function SHDN Shutdown active low. Ground to power-down the device; tie to +VSfor normal operation. Output power FET is held off when SHDN is low. VREFReference voltage output (+1.23 V) supplies up to 100
