1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update the boilerplate to current requirements as specified in MIL-PRF-38535. Editorial changes throughout. jak 06-12-06 Thomas M. Hess REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14
2、PMIC N/A PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE
3、DRAWING APPROVAL DATE 94-11-10 MICROCIRCUIT, DIGITAL, CMOS, MICROPOWER PHASE-LOCKED-LOOP, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94664 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E667-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without licen
4、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes M and Q
5、) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following
6、 example: 5962 - 94664 01 M E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-385
7、35 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) id
8、entify the circuit function as follows: Device type Generic number Circuit function 01 4046B Micropower phase-locked-loop 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M
9、 Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follo
10、ws: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or n
11、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage r
12、ange (VIN) -0.5 V dc to VDD + 0.5 V dc Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (PD) 500 mW 2/ Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) . +175C 1.4 Recommended operating conditi
13、ons. Supply voltage range (VDD): VCO section: As fixed oscillator +3.0 V dc to +18 V dc Phased-locked-loop operation +5.0 V dc to +18 V dc Phase comparator section: Comparator. +3.0 V dc to +18 V dc VCO operation +5.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage
14、 range (VIN). 0 V to VDDOutput voltage range (VOUT) 0 V to VDD2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th
15、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electr
16、onic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Stand
17、ardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersede
18、s applicable laws and regulations unless a specific exemption has been obtained. 1/ Unless otherwise noted, all voltages are referenced to GND. 2/ For TC= +100C to +125C, derate linearly at 12 mW/C to 200 mW. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
19、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535
20、and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A
21、for non-JAN class level C devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes B, S, Q, and V or MIL-PRF-38535, appendix A and herein for device class
22、 M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.6 Switching waveforms and test circuit. The switc
23、hing waveforms and test circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall
24、 apply over the full case operating temperature range. Test conditions for these specified characteristics and limits are as specified in table I. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup a
25、re defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the
26、“5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The
27、 certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be require
28、d from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certif
29、icate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M the requirements of MIL-PRF-38535, appendix A a
30、nd herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M
31、. For device class M notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain
32、 the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit
33、 group number 105 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97
34、 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits Unit Min Max1 0.51 2 1/ 0.36 VO= 0.4 V VIN= 0.0 V or VDDAll 5 V 3 1/ 0.64 1 1.3 2 1/ 0.9 VO= 0.5 V VIN= 0.0 V or VDDAll 10 V 3 1/ 1.6 1 3.4 2 1/ 2
35、.4 Low level output current IOLVO= 1.5 V VIN= 0.0 V or VDDAll 15 V 3 1/ 4.2 mA 1 -0.51 2 1/ -0.36 VO= 4.6 V VIN= 0.0 V or VDDAll 5 V 3 1/ -0.64 1 -1.6 2 1/ -1.15 VO= 2.5 V VIN= 0.0 V or VDDAll 5 V 3 1/ -2.0 1 -1.3 2 1/ -0.9 VO= 9.5 V VIN= 0.0 V or VDDAll 10 V 3 1/ -1.6 1 -3.4 2 1/ -2.4 High level ou
36、tput current IOHVO= 13.5 V VIN= 0.0 V or VDDAll 15 V 3 1/ -4.2 mA 1, 3 0.1 Input current IINAll terminals except SIGNAL IN VIN= 0.0 V or VDDAll 18 V 2 1.0 A Functional tests See 4.4.1b All 7 VOLTAGE-CONTROLLED OSCILLATOR SECTION 5 V 1/ 1, 2, 3 0.05 10 V 1/ 1, 2, 3 0.05 Low level output voltage VOLVI
37、N= 0.0 V or VDDVCO OUT driving CMOS e.g., COMPARATOR IN All 15 V 1, 2, 3 0.05 V 5 V 1/ 1, 2, 3 4.95 10 V 1/ 1, 2, 3 9.95 High level output voltage VOHVIN= 0.0 V or VDDVCO OUT driving CMOS e.g., COMPARATOR IN All 15 V 1, 2, 3 14.95 V Zener diode voltage VZIZ= 50 A TC= +25C All 1 4.45 6.5 V 5 V 4 140
38、10 V 4 1600 Operating power dissipation PD1/ fO= 10 MHz R1= 1 M R2= VCOIN= VDD/2 TC= +25C All 15 V 4 6000 mW See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY
39、 CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits Unit Min Max5 V 9 0.3 10 V 9 0.6 C1= 50 pF R1=
40、10 k R2= VCOIN= VDD TC= +25C All 15 V 9 0.8 MHz 5 V 9 0.5 10 V 9 1.0 Maximum operating frequency fMAX1/ C1= 50 pF R1= 5 k R2= VCOIN= VDDTC= +25C All 15 V 9 1.4 MHz 5 V 1 2.5 10 V 1 2.5 Source-follower output (demodulated output) offset voltage VCOIN- VDEM 1/ RS= 10 k TC= +25C All 15 V 1 2.5 V 5 V 9
41、200 10 V 9 100 Output transition time tTLH, tTHL1/ TC= +25C All 15 V 9 80 ns PHASE COMPARATOR SECTION 5 V 1 1.0 10 V 1 0.2 SIGNAL IN input resistance RSIGIN1/ TC= +25C All 15 V 1 0.1 M 5 V 4 360 10 V 1/ 4 660 SIGNAL IN AC coupled voltage sensitivity (peak-to-peak) VSIGINfIN= 100 kHz sine-wave 2/ TC=
42、 +25C All 15 V 1/ 4 1800 mV 5 V 1/ 1, 3 0.2 10 V 1/ 1, 3 1.0 15 V 1/ 1, 3 1.5 IDD1SIGNAL IN = open INHIBIT = VDDVIN= 0.0 V or VDDTC= +25C and -55C All 20 V 1, 3 4.0 mA 5 V 1/ 1, 3 20 10 V 1/ 1, 3 40 15 V 1/ 1, 3 80 Quiescent leakage current (phase comparator) IDD2SIGNAL IN = VSSor VDDINHIBIT = VDDVI
43、N= 0.0 V or VDDTC= +25C and -55C All 20 V 1, 3 160 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVE
44、L A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits Unit Min Max1, 3 0.1 Three-state leakage current IOUTVIN= 0.0 V or 18 V All 18 V 2 0.2 A VO= 0.5 V or
45、 4.5 V TC= +25C 5 V 1 1.5 VO= 1.0 V or 9.0 V TC= +25C 10 V 1/ 1 3.0 VILVO= 1.5 V or 13.5 V TC= +25C All 15 V 1 4.0 V VO= 0.5 V or 4.5 V TC= +25C 5 V 1 3.5 VO= 1.0 V or 9.0 V TC= +25C 10 V 1/ 1 7.0 DC coupled signal input and comparator input voltage sensitivity VIHVO= 1.5 V or 13.5 V TC= +25C All 15
46、 V 1 11.0 V 9 700 5 V 10, 11 1050 9 300 10 V 10, 11 450 9 200 tPLH1/ All 15 V 10, 11 300 ns 9 450 5 V 10, 11 675 9 200 10 V 10, 11 300 9 130 Propagation delay time, SIGNAL IN to PHASE PULSES tPHL1/ See figure 3 All 15 V 10, 11 195 ns 9 450 5 V 10, 11 675 9 200 10 V 10, 11 300 9 190 Propagation delay
47、 time, disable, COMPARATOR IN to PHASE COMPARATOR II OUT tPHZ1/ All 15 V 10, 11 285 ns 9 570 5 V 10, 11 855 9 260 10 V 10, 11 390 9 190 Propagation delay time, disable, SIGNAL IN to PHASE COMPARATOR II OUT tPLZ1/ See figure 3 All 15 V 10, 11 285 ns See footnotes on next sheet. Provided by IHSNot for
48、 ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94664 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits Unit Min Max9 50 5 V 10, 11 75 9 1.0 10 V 10, 11 1.5 9 0.3 Input rise or fall time, COMPARAT
