DLA SMD-5962-95580 REV B-2008 MICROCIRCUIT DIGITAL BIPOLAR TTL DATA SELECTORS MULTIPLEXERS MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. Editorial changes throughout. - les. 00-10-30 Raymond Monnin B Update drawing to current requirements. Editorial changes throughout. - gap 08-05-08 Robert M. Heber REV SHET REV SHET REV STATUS REV

2、B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVE

3、D BY Thomas M. Hess MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, DATA SELECTORS/MULTIPLEXERS, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-01-26 MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95580 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E048-08 Provided by I

4、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assuranc

5、e class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels ar

6、e reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95580 01 Q J X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2)Deviceclass designatorCaseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designat

7、or. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indic

8、ates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54150 data selectors/multiplexers 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance l

9、evel as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). T

10、he case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 dual in line package K GDFP2-F24 or CDFP3-F24 24 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device

11、classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FO

12、RM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range -0.5 V dc minimum to +7.0 V dc maximum Input voltage . 5.5 V dc Storage temperature . -65C to +150C Maximum power dissipation (PD) 374 mW 2/ Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC)

13、 See MIL-STD-1835 Junction temperature (TJ) . +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) . +4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) 2.0 V Maximum low level input voltage (VIL) . 0.8 V dc Ambient operating temperature range (TA) . -55C t

14、o +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or c

15、ontract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HA

16、NDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building

17、 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemptio

18、n has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation is defined as VCCx ICC, and must withstand the added PDdue to short cir

19、cuit test, e.g., IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item req

20、uirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described h

21、erein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MI

22、L-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The

23、truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation

24、parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. Th

25、e part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product

26、 using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes

27、 Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer

28、 in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-

29、VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conform

30、ance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to

31、 DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufactur

32、ers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 003 (see MIL-PRF-38535

33、, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance char

34、acteristics. Test Symbol Conditions -55C TA+125C Group A subgroups Limits Unit unless otherwise specified Min Max High level output voltage VOHVCC= 4.5 V, VIL= 0.8 V VIH= 2.0 V, IOH= -0.8 mA 1, 2, 3 2.4 V Low level output voltage VOLVCC= 4.5 V, VIH= 2.0 V VIL= 0.8 V, IOL= 16 mA 1, 2, 3 0.4 V Input c

35、lamp voltage VIKVCC= 4.5 V, IIN= -8 mA 1, 2, 3 -1.5 V High level input current IIH1 VCC= 5.5 V, VIN= 5.5 V 1, 2, 3 1 mA Low level input current IIL VCC= 5.5 V, VIN= 0.4 V 1, 2, 3 -1.6 mA High level input current IIH2 VCC= 5.5 V, VIN= 2.4 V 1, 2, 3 40 A Short circuit input current IOSVCC= 5.5 V 1/ 1,

36、 2, 3 -20 -55 mA Supply current ICC VCC= 5.5 V 2/ 1, 2, 3 68 mA Functional test VCC= 4.5 V, 5.5 V See 4.4.1b 7, 8 tPLH 35 Propagation delay time, from A, B, C, or D inputs (3 levels) to W tPHL VCC= 5.0 V, RL= 400 , CL= 15 pF See figure 4 9 33 ns tPLH 24 Propagation delay time, Strobe G to W tPHL 9 3

37、0 ns tPLH 14 Propagation delay time, E0 thru E15, or D0 thru D7 to W tPHL 9 20 ns 1/ Not more than 1 output should be shorted at a time. 2/ ICCis measured with the strobe and data select inputs at 4.5 V, all other inputs and outputs open. Provided by IHSNot for ResaleNo reproduction or networking pe

38、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines J and K Terminal number Terminal symbol 1 E7 2 E6 3 E5 4 E4 5 E3 6 E2 7 E1 8 E0 9

39、G 10 W11 D 12 GND13 C 14 B 15 A 16 E15 17 E14 18 E13 19 E12 20 E11 21 E10 22 E9 23 E8 24 VCCFIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS

40、 COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 INPUTS OUTPUT SELECT STROBE WD C B A X X X X H H L L L L L E0 L L L H L E1 L L H L L E2 L L H H L E3 L H L L L E4 L H L H L E5 L H H L L E6 L H H H L E7 H L L L L E8 H L L H L E9 H L H L L E10 H L H H L E11 H H L L L E12 H H L

41、 H L E13 H H H L L E14 H H H H L E15 NOTES: H = High voltage level. L = Low voltage level. E0 , E1 E15 = The complement of the level of the respective E input. X = Irrelevant. FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STA

42、NDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 OUTPUTFIGURE 3. Logic diagram.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

43、RAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 NOTES: 1. CLincludes probe and jig capacitance. 2. All diodes are 1N3064, 1N916 or equivalent. FIGURE 4. Test circuit and switching waveforms. Provided by IHSNot for Resal

44、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95580 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, samp

45、ling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures sh

46、all be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordanc

47、e with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A or D. The test circuit shall be maintained by the manufacturer under docum

48、ent revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, o

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