1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes IAW NOR 5962-R076-98 - thl 98-03-27 Raymond L. MonninB Add device class T criteria. Editorial changes throughout. - jak 98-11-25 Monica L. PoelkingC Correct the Total Dose Rate and update RHA levels. LTG 99-04-29 Monica L. PoelkingREVSHEET
2、REV B B B B B B B B B BSHEET 15 16 17 18 19 20 21 22 23 24REV STATUS REV C B C B B C C C C B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Larry T. GauderDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING I
3、S AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, RADIATION HARDENED,HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATEOUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHICAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-13
4、SILICONAMSC N/A REVISION LEVELCSIZEACAGE CODE67268 5962-95748SHEET 1 OF 24DSCC FORM 2233APR 97 5962 -E242-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICR
5、OCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M),space application (device class
6、V) and for appropriate satellite and similar applications (device class T). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of RadiationHardness Assurance (RHA) levels are reflected in the PIN. For device cl
7、ass T, the user is encouraged to review the manufacturersQuality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.1.2 PIN . The PIN is as shown in the following example:5962 R 95748 01 V X CFederal RHA Device Device Case Lead stock c
8、lass designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designat or (see 1.2.4) (see 1.2.5) / ( see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designa
9、tor. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circ
10、uit function01 HCTS374 Radiation hardened, SOS, high speed CMOS,octal D-type positive edge-triggered flip-flop withthree-state outputs, TTL compatible inputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level as follows:Device class
11、Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant, non -JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ, V Certification and qualification to MIL-PRF-38535T Certification and qualificatio n to MIL-PRF-38535 with p
12、erformance as specifiedin the device manufacturers approved quality management plan.1.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleR CDIP2-T20 20 Dual-in-lineX CDFP4-F20 20 Flat pack1.2.5 Lead
13、finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER C
14、OLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC inp
15、ut current, any one input (I IN ) . 10 mADC output current, any one output (I OUT ) . 25 mAStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):Case outline R . 24 C/WCase outline X . 28 C/WThermal resistance,
16、junction -to -ambient ( JA ):Case outline R . 72 C/WCase outline X . 107 C/WJunction temperature (T J ) . +175 CMaximum package power dissipation at T A = +125 C (P D ) : 4 /Case outline R . 0.69 WCase outline X . 0.47 W1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.
17、5 V dc to +5.5 V dcInput voltage range (V IN ) . +0.0 V dc to V CCOutput voltage range (V OUT ) . +0.0 V dc to V CCMaximum low level input voltage (V IL ) . 0.8 VMinimum high level input voltage (V IH ) V CC /2Case operating temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time
18、at V CC = 4.5 V ( t r , t f ) 500 ns1.5 Radiation features :Maximum total dose available (dose rate = 50 300 rad ( Si)/s)(Device classes M ,Q, or V) . 2 x 10 5 Rads ( Si)(Device class T) 1 x 1 0 5 Rads ( Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4)
19、100 MeV/(cm 2 /mg) 5 /Dose rate upset (20 ns pulse) 1 x 10 10 Rads (Si)/ s 5 /Latch-up None 5 /Dose rate survivability . 1 x 10 12 Rads (Si)/ s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance
20、and affect reliability.2 / Unless otherwise noted, all voltages are referenced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds package dissipation
21、capability, provide heat sinking or derate linearly (the derating is based on JA ) atthe following rate:Case outline R 13.9 mW/ CCase outline X . 9.3 mW/ C5 / Guaranteed by design or process but no t tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS
22、-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthi
23、s drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issueof the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-385
24、35 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOK SDEPARTMENT OF DEFENSEMIL-HDBK-103 - Li
25、st of Standard Microcircuit Drawings (SMDs).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Stan dardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2
26、 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1
27、Item requirements . The individual item requirements for device classes Q, T and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as d
28、escribed herein. The individual item requirements for deviceclass M shall be in accordance with MIL-PRF-38535 , appendix A and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . T
29、he design, construction, and physical dimensions shall be as specified inMIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The
30、 terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . The logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as sp
31、ecified on figure 4.3.2.6 Irradiation test connections . The irradiation test connections shall be as specified in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER COLUMBUSCOL
32、UMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5DSCC FORM 2234APR 973.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall
33、 apply over the full case operatingtemperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herei
34、n. In addition, the manufacturers PIN may also be markedas listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA des
35、ignatorshall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device classM shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q, T and V shall be a “QML“ o
36、r “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q, T and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to th
37、e requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an
38、approved source of supply for this d rawingshall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and hereinor for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of c
39、onformance as required for device classes Q, T and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of
40、product (see 6.2 herein)involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applica
41、ble required documentation. Offshore documentation shall be made availableonshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 38 (see MIL-PRF-38535, appendix A).Provided by I
42、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test condi
43、tions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxHigh level outputvoltageV OH For all inputs affectingOutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 4.40F
44、or all inputs affectingOutput under testV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 5.40V IN = V CC or GNDI OH = -50 A M, D, P, L, R 3 / All 1 5.40Low level outputvoltageV OL For all inputs affectingOutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV I
45、N = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1For all inputs affectingOutput under testV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, P, L, R 3 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V
46、 CC or GNDAll 5.5 V 1 +0.5 A2, 3 +5.0M, D, P, L, R3 /All 1 +5.0Input current lowI IL For input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -5.0M, D, P, L, R3 /All 1 -5.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking per
47、mitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-95748DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherw
48、ise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxOutput current high(Source)I OH For all inputs affecting outputUnder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 -7.2 mAFor all other inputs 2, 3 -6.0V IN = V CC or GNDV OUT = 4.1 V M, D, P, L, R 3 / All 1 -6.0Output current low(Sink)I OL For all inputs affecting outputUnder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 7.2 mAFor all other inputs 2, 3 6.0V IN = V CC or GNDV OUT = 0.4 V M, D, P, L, R 3 / All 1 6.0Three -state outputleakage currenthighI OZHOE = 5.5 VFor a
