1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R108-97. TVN 96-12-10 Monica L. Poelking B Changes in accordance with NOR 5962-R086-98. CFS 98-03-31 Monica L. Poelking C Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the
2、boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. TVN 05-08-24 Thomas M. Hess D Update boilerplate paragraphs and radiation paragraphs 4.4.4.1 4.4.4.4 to the current MIL-PRF-38535 requirements. - LTG 12-05-17 Thomas M. Hess REV SHEET REV D D D D D D SHEET 15 16 17 18 19
3、 20 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AN
4、D AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-03 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96526 SHEET 1 OF
5、 20 DSCC FORM 2233 APR 97 5962-E321-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.
6、This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of R
7、adiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96526 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) /
8、(see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with t
9、he appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS20 Radiation hardened, dual 4-input NAND gate 1.2.3 Device class designator. The device class d
10、esignator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certifica
11、tion and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is a
12、s specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R
13、EVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Lat
14、ch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions.
15、 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 5/ Maximum tota
16、l dose available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): Effective linear energy transfer (LET), no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Effective linear energy transfer (LET), no latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x
17、 109Rads (Si)/s Latch-up . None Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are
18、 referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation t
19、esting is performed on the standard evaluation circuit. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproductio
20、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specific
21、ation, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Speci
22、fication for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings.
23、(Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the refe
24、rences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in
25、accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with
26、 MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp
27、ecified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Tr
28、uth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiat
29、ion exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
30、 electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical t
31、ests for each subgroup are defined in table IA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking
32、. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA pro
33、duct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device cla
34、sses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufact
35、urer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to D
36、LA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 C
37、ertificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device cla
38、ss M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes age
39、nt, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by
40、this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SH
41、EET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIH All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 All
42、 5.5 V 1, 2, 3 3.85 M, D, P, L, R, F, G, H 3/ All 1 3.85 Low level input voltage VIL All 4.5 V 1, 2, 3 1.35 V M, D, P, L, R, F, G, H 3/ All 1 1.35 All 5.5 V 1, 2, 3 1.65 M, D, P, L, R, F, G, H 3/ All 1 1.65 High level output voltage VOH For all inputs affecting output under test, VIN= VDDor VSSIOH=
43、-100 A All 4.5 V 1, 2, 3 4.25 V M, D, P, L, R, F, G, H 3/ All 1 4.25 Low level output voltage VOL For all inputs affecting output under test, VIN= VDDor VSSIOL= 100 A All 4.5 V 1, 2, 3 0.25 V M, D, P, L, R, F, G, H 3/ All 1 0.25 Input current high IIH For input under test, VIN= VDDFor all other inpu
44、ts, VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IIL For input under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Output current (source) IOH4/ For output under test, VOUT= VDD - 0.4 V
45、 VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 -8.0 mA M, D, P, L, R, F, G, H 3/ All 1 -8.0 Output current (sink) IOL4/ For output under test, VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 mA M, D, P, L, R, F, G, H 3/ All 1 8.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.
46、0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96526 DLA
47、 LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Input capacitance CI
48、Nf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW7/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 1.9 mW/ MHz M, D, P, L, R, F, G, H 3/ All 4 1.9 Functional test 8/ VIH= 0.7 VDD, VIL= 0.3 VDD See 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H 3/ All 7 L H Propagation delay time, An, Bn, Cn, or Dn to Yn tPLH9/ CL= 50 pF minimum See figure 4 All 4.5 V and 5.5 V 9, 10, 11 1.0 11.0 ns M, D, P, L, R, F, G, H 3/ All 9 1.0 11.0 tPHL9/ CL= 50 pF minimum See figure 4 All 4.5
