DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf

上传人:progressking105 文档编号:700928 上传时间:2019-01-01 格式:PDF 页数:16 大小:184.40KB
下载 相关 举报
DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第1页
第1页 / 共16页
DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第2页
第2页 / 共16页
DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第3页
第3页 / 共16页
DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第4页
第4页 / 共16页
DLA SMD-5962-96574 REV C-2012 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS DUAL 4-LINE TO 1-LINE DATA SELECTOR MULTIPLEXER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf_第5页
第5页 / 共16页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R128-97. JB 96-11-19 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout.

2、TVN 05-11-28 Thomas M. Hess C Update boilerplate paragraphs and radiation paragraphs 4.4.4.1 4.4.4.4 to the current MIL-PRF-38535 requirements. - LTG 12-06-22 Thomas M. Hess REV SHEET REV C SHEET 15 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A

3、PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelkin

4、g MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-07-11 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96574 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E323-12 Provided by IHSN

5、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class leve

6、ls consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected i

7、n the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96574 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Devi

8、ce classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a n

9、on-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS253 Radiation hardened, dual 4-line to 1-line data selector/multiplexer with three-state outputs 1.2.3 Device class designator. The device class desig

10、nator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification

11、 and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as sp

12、ecified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVIS

13、ION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-u

14、p immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/

15、3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 5/ Maximum total do

16、se available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): Effective linear energy transfer (LET), no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Effective linear energy transfer (LET), no latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109

17、Rads (Si)/s Latch-up . None Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are ref

18、erenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testi

19、ng is performed on the standard evaluation circuit. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or

20、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specificatio

21、n, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specifica

22、tion for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Cop

23、ies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references ci

24、ted herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordanc

25、e with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-

26、38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for d

27、evice class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall b

28、e as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall

29、 be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA an

30、d shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. Provided by IHSNot for ResaleNo reproduction or networking p

31、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be

32、 marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall b

33、e in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M sh

34、all be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certif

35、icate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that

36、the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38

37、535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acqu

38、ired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable require

39、d documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). Provided by IHSNot fo

40、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/

41、 -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max High level input voltage VIH All 4.5 V 1, 2, 3 3.15 V M, D, P, L, R, F, G, H 3/ All 1 3.15 All 5.5 V 1, 2, 3 3.85 M, D, P, L, R, F, G, H 3/ All 1 3.85 Low level input voltage VIL All 4.5 V 1, 2, 3 1.35

42、V M, D, P, L, R, F, G, H 3/ All 1 1.35 All 5.5 V 1, 2, 3 1.65 M, D, P, L, R, F, G, H 3/ All 1 1.65 High level output voltage VOH For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 4.5 V 1, 2, 3 4.25 V M, D, P, L, R, F, G, H 3/ All 1 4.25 Low level output voltage VOL For all in

43、puts affecting output under test, VIN= VDDor VSSIOL= 100 A All 4.5 V 1, 2, 3 0.25 V M, D, P, L, R, F, G, H 3/ All 1 0.25 Input current high IIH For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 +1.0 A M, D, P, L, R, F, G, H 3/ All 1 +1.0 Input current low IIL For in

44、put under test, VIN= VSSFor all other inputs, VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A M, D, P, L, R, F, G, H 3/ All 1 -1.0 Output current (source) IOH4/ For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 -8.0 mA M, D, P, L, R, F, G, H 3/ All 1 -8.0 Output current (sink

45、) IOL4/ For output under test, VOUT= 0.4 V VIN= VDDor VSSAll 4.5 V and 5.5 V 1, 2, 3 8.0 mA M, D, P, L, R, F, G, H 3/ All 1 8.0 Quiescent supply current IDDQVIN= VDDor VSSAll 5.5 V 1, 2, 3 10.0 A M, D, P, L, R, F, G, H 3/ All 1 10.0 Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1,

46、2, 3 200 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96574 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electr

47、ical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 2/ Unit Min Max Three-state output leakage current, high IOZHmG = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VDD All 5.5 V 1, 2, 3 +20.0 A

48、M, D, P, L, R, F, G, H 3/ All 1 +20.0 Three-state output leakage current, low IOZLmG = 5.5 V For all other inputs, VIN= VDDor VSSVOUT= VSS All 5.5 V 1, 2, 3 -20.0 A M, D, P, L, R, F, G, H 3/ All 1 -20.0 Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Switching power dissipation PSW7/ CL= 50 pF, per switching output All 4.5 V and 5.5 V 4, 5, 6 2.1 mW/ MHz M, D, P, L, R, F, G, H 3/ All 4 2.1 Functional test 8/ VIH= 0.7 VDD, VIL= 0.3 VDD See 4.4.1b All 4.5 V and 5.5 V 7, 8 L H M, D, P, L, R, F, G, H

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1