1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R098-97. - CFS 96-11-18 Monica L. Poelking B Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughou
2、t. - TVN 05-11-28 Thomas M. Hess C Add die requirements with appendix A. Update boilerplate paragraphs as specified in the current MIL-PRF-38535 requirements.- MAA 09-02-11 Charles F. Saffle REV SHET REV C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 REV C C C C C C C C C C C C C C REV STATUS OF
3、 SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-04-03 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION
4、 HARDENED, OCTAL D FLIP-FLOP WITH CLEAR, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-96578 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL C SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E169-09 Provid
5、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product a
6、ssurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) le
7、vels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96578 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 R
8、HA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A das
9、h (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS273 Radiation hardened, octal D flip-flop with clear 1.2.3 Device class designator. The device class designator is a single letter
10、identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL
11、-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535
12、for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEE
13、T 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output voltage range (VOUT). -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN) 10 mA Latch-up immunity current
14、 (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD). 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage ra
15、nge (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT) 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ Case operating temperature range (TC) -55C to +125C 1.5 Radiation features. 5/ Total dose 1 x 106Rads (Si) Single even
16、t phenomenon (SEP) effective: Linear energy threshold (LET), no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) Linear energy threshold (LET), no latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) Dose rate upset (20 ns pulse) . 1 x 109Rads (Si)/s Dose rate induced latch-up None Dose rate survivability 1 x 1012Rads (Si)/
17、s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shal
18、l apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. Provided by IHSNot
19、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and
20、 handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circ
21、uits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780
22、- Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document form a p
23、art of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Ind
24、uced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Driver, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of t
25、his drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device clas
26、ses Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M
27、shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physic
28、al dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spe
29、cified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSN
30、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connectio
31、ns shall be as specified in table III. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case
32、 operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the ma
33、nufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for dev
34、ice classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance
35、 mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). F
36、or device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall af
37、firm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in
38、MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to
39、this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation sh
40、all be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking perm
41、itted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless o
42、therwise specified Device type VDDGroup A subgroups Min Max Unit All 1, 2, 3 3.15 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 3.15 All 1, 2, 3 3.85 High level input voltage VIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 3.85 V All 1, 2, 3 1.35 M, D, P, L, R, F, G, H 3/ All 4.5 V 1 1.35 All 1, 2, 3 1.65 Low lev
43、el input voltage VIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 1.65 V For all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A All 1, 2, 3 4.25 High level output voltage VOH M, D, P, L, R, F, G, H 3/ All 4.5 V 1 4.25 V For all inputs affecting output under test, VIN= VDDor VSSIOL= +100 A Al
44、l 1, 2, 3 0.25 Low level output voltage VOL M, D, P, L, R, F, G, H 3/ All 4.5 V 1 0.25 V For input under test, VIN= VDDFor all other inputs, VIN= VDDor VSSAll 1, 2, 3 +1.0 Input current high IIH M, D, P, L, R, F, G, H 3/ All 5.5 V 1 +1.0 A For input under test, VIN= VSSFor all other inputs, VIN= VDD
45、or VSSAll 1, 2, 3 -1.0 Input current low IIL M, D, P, L, R, F, G, H 3/ All 5.5 V 1 -1.0 A For output under test, VOUT= VDD - 0.4 V VIN= VDDor VSSAll 1, 2, 3 -8.0 Output current (source) IOH4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 -8.0 mA For output under test, VOUT= 0.4 V VIN= VDDor VSSAll
46、 1, 2, 3 +8.0 Output current (sink) IOL4/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 1 +8.0 mA VIN= VDDor VSSAll 1, 2, 3 10.0 Quiescent supply current IDDQM, D, P, L, R, F, G, H 3/ All 5.5 V 1 10.0 A Short circuit output current IOS5/ 6/ VOUT= VDDand VSSAll 5.5 V 1, 2, 3 200 mA See footnotes at e
47、nd of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A 5962-96578 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL c SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance char
48、acteristics Continued. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Min Max Unit Input capacitance CINf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF Output capacitance COUTf = 1 MHz See 4.4.1c All 0.0 V 4 15.0 pF CL= 50 pF, per switching output All 4, 5, 6 1.9 Switching power dissipation PSW7/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 4 1.9 mW/MHzVIH= 0.7 VDD, VIL= 0.3 VDD See 4.4.1b All 7, 8 L H Functional test 8/ M, D, P, L, R, F, G, H 3/ All 4.5 V and 5.5 V 7 L H CL= 50 pF minimum
