1、 REVISIONS A Add appendix A, containing die information, to the SMD. 97-02-28 Monica L. Poelking B Correct die thickness, glassivation type, and substrate potential parameters in appendix A. 97-07-24 Raymond Monnin C Correct table I. Add logic diagram. Technical and editorial changes throughout. - C
2、FS 98-01-15 Monica L. Poelking D Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. jak 04-04-15 Thomas M. Hess REV SHET REV D D D D D SHEET 15 16 17 18 19 REV STATUS REV D C D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Ke
3、nneth Rice STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil APPROVED BY Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-
4、18 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX SCHMITT TRIGGER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96603 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E119-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot
5、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance cla
6、ss levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are ref
7、lected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96603 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designat
8、or. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indic
9、ates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 40106B Radiation hardened CMOS, hex Schmitt trigger 02 40106BN Radiation hardened CMOS, hex Schmitt trigger with neutron irradiated die 1.2.3 Devic
10、e class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-
11、PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finis
12、h. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96603 DEFENSE SUPPLY CENTER COLU
13、MBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc DC input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V dc DC input current, any one input (IIN) 10 mA Device dissipation per output tran
14、sistor 100 mW Storage temperature range (TSTG). -65C to +150C Lead temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case outline C. 24C/W Case outline X . 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C. 74C/W Case outline X . 116C/W Junction te
15、mperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline C. 0.68 W Case outline X . 0.43 W 1.4 Recommended operating conditions. Supply voltage range (VDD) +3.0 V dc to +18 V dc Case operating temperature range (TC) -55C to +125C Input voltage range (VIN) +0.0 V to V
16、DDOutput voltage range (VOUT) +0.0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.5) 75 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse). 5 x 108Rads (Si)/s 5/ Dose rate latch-up. 2 x 108Rads (Si)/s 5/
17、 Dose rate survivability. 5 x 1011Rads (Si)/s 5/ Neutron irradiated (device type 02). 1 x 1014neutrons/cm21/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwi
18、se noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate l
19、inearly (the derating is based on JA) at the following rate: Case outline C. 13.5 mW/C Case outline X. 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59
20、62-96603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified h
21、erein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manuf
22、acturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard
23、Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of
24、 this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device cl
25、asses Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class
26、M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and phys
27、ical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as s
28、pecified on figure 1. 3.2.3 Logic diagram. The functional diagram shall be as specified on figure 2. 3.2.4 Radiation test connections. The irradiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless o
29、therwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN
30、DARD MICROCIRCUIT DRAWING SIZE A 5962-96603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup
31、 are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has th
32、e option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certif
33、ication/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of
34、 compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (s
35、ee 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements o
36、f MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification
37、 of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DS
38、CCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices cove
39、red by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REV
40、ISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Unit Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max 1, 3 1/ 1.0 VDD= 5.0 V, VIN= 0.0 V or VDD2 1/ 30 1, 3 1/ 2.0 VDD= 10 V, VIN= 0.0 V or VDD2 1/
41、 60 1, 3 1/ 2.0 VDD= 15 V, VIN= 0.0 V or VDD2 1/ 120 1 2.0 VDD= 20 V, VIN= 0.0 V or VDD2 200 M, D, P, L, R 2/ 1 7.5 Supply current IDDVDD= 18 V, VIN= VDDor 0.0 V All 3 2.0 A 1 0.53 2 1/ 0.36 VDD= 5.0 V VO= 0.4 V VIN= 0.0 V or VDD3 1/ 0.64 1 1.4 2 1/ 0.9 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDD3 1/ 1.6
42、1 3.5 2 1/ 2.4 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 4.2 mA 1 -0.53 2 1/ -0.36 VDD= 5.0 V, VIN= 0.0 V or VDDVO= 4.6 V 3 1/ -0.64 1 -1.8 2 1/ -1.15 VDD= 5.0 V, VIN= 0.0 V or VDDVO= 2.5 V 3 1/ -2.0 1 -1.4 2 1/ -0.9 VDD= 10 V, VIN= 0.0 V or VDDVO= 9.5 V 3 1/ -
43、1.6 1 -3.5 2 1/ -2.4 High level output current (source) IOHVDD= 15 V, VIN= 0.0 V or VDDVO= 13.5 V All 3 1/ -4.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 VDD= 5 V, no load 1/ 1, 2, 3 0.05 VDD= 10 V, no load
44、 1/ 1, 2, 3 0.05 Output voltage, low VOLVDD= 15 V, no load All 1, 2, 3 0.05 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO
45、 43216-5000 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Unit Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max VIN= VDDor GND, VDD= 20 V 1 -100 VIN= VDDor GND, VDD= 20 V 2 -1000 I
46、nput leakage current, low IILVIN= VDDor GND, VDD= 18 V 3 -100 VIN= VDDor GND, VDD= 20 V 1 100 VIN= VDDor GND, VDD= 20 V 2 1000 Input leakage current, high IIHVIN= VDDor GND, VDD= 18 V All 3 100 nA VDD= 10 V, ISS= -10 A All 1 -0.7 -2.8 Negative threshold voltage VNTHM, D, P, L, R 2/ All 1 -0.2 -2.8 V
47、 Negative threshold voltage, delta VNTHVDD= 10 V, ISS= -10 A M, D, P, L, R 2/ All 1 1.0 V VSS= 0.0 V, IDD= 10 A All 1 0.7 2.8 Positive threshold voltage VPTHM, D, P, L, R 2/ All 1 0.2 2.8 V Positive threshold voltage, delta VPTHVSS= 0.0 V, IDD= 10 A M, D, P, L, R 2/ All 1 1.0 V VP5VDD= 5 V 2.2 3.6 V
48、P10VDD= 10 V 4.6 7.1 Positive trigger threshold voltage VP15VDD= 15 V All 1, 2, 3 6.8 10.8 V VN5VDD= 5 V 0.9 2.8 V VN10VDD= 10 V 2.5 5.2 Negative trigger threshold voltage VN15VDD= 15 V All 1, 2, 3 4.0 7.4 VH5VDD= 5 V 0.3 1.6 V VH10VDD= 10 V 1.2 3.4 Hysteresis voltage VH15VDD= 15 V All 1, 2, 3 1.6 5.0 Input capacitance CIN1/ Any input, see 4.4.1c All 4 7.5 pF VDD= 2.8 V, VIN= VDDor GND 7 VDD= 20 V, VIN= VDDor GND 7 VDD= 18 V, VIN= VDDor GND 8A M, D, P, L, R 2/ 7 VDD= 3.0 V, VIN= VDDor GND 8B Functional tests M, D, P, L, R 2/ All 7 VOH VDD/2 VOL VDD/2 V 9 280.0 VDD= 5 V, VIN= VD
