1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R125-97. 96-11-29 Monica L. Poelking B Changes in accordance with NOR 5962-R375-97. 97-07-24 Monica L. Poelking C Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535 requirements. Editorial chang
2、es throughout. LTG 03-12-11 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE S
3、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-12-14 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, NON-INVERTING HEX BUFFER/CONV
4、ERTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96637 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E053-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license
5、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
6、and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following e
7、xample: 5962 R 96637 01 V X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535
8、 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) iden
9、tify the circuit function as follows: Device type Generic number Circuit function 01 4050B Radiation hardened, CMOS, hex buffer/converter 02 4050BN Radiation hardened, CMOS, hex buffer/converter with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter
10、 identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MI
11、L-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line package X CDFP4-F16 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 f
12、or device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET
13、 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range . -0.5 V dc to + 20.5 V dc DC input current, any one input . 10 mA Device dissipation per output transistor . 100 mW Storage temperature range (TSTG) -65C to +150C Lea
14、d temperature (soldering, 10 seconds) +265C Thermal resistance, junction-to-case (JC): Case E 24C/W Case X 29C/W Thermal resistance, junction-to-ambient (JA): Case E 73C/W Case X 114C/W Junction temperature (TJ). +175C Maximum power dissipation at TA= +125C (PD): 4/ Case E 0.68 W Case X 0.44 W 1.4 R
15、ecommended operating conditions. Supply voltage range (VDD) 3.0 V dc to +18 V dc Case operating temperature range (TC). -55C to +125C Input voltage (VIN) VDDto 18 V dc 5/ Output voltage (VOUT). 0 V to VDDRadiation features: Total dose . 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear
16、 energy threshold, no upsets or latchup (see 4.4.4.5) 75 MeV/(cm2/mg) 6/ Dose rate upset (20 ns pulse) . 5 x 108 Rads(Si)/s 6/ Dose rate latch-up 2 x 108Rads(Si)/s 6/ Dose rate survivability 5 x 1011Rads(Si)/s 6/ Neutron irradiated 1 x 1014neutrons/cm27/ 2. APPLICABLE DOCUMENTS 2.1 Government specif
17、ication, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standa
18、rds (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum
19、 levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device p
20、ower exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E. 13.7 mW/C Case X. 8.8 mW/C 5/ This device has high-to-low level voltage conversion capability but not low-to-high level; therefore it is recommended that
21、VIN VDD. 6/ Guaranteed by design or process but not tested. 7/ Device type 02 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVE
22、L C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Mic
23、rocircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of th
24、is drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device class
25、es Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M s
26、hall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physica
27、l dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spec
28、ified on figure 1. 3.2.3 Load circuit and switching waveforms. The load circuit and switching waveforms shall be as specified on figure 2. 3.2.4 Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postir
29、radiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirement
30、s shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the
31、entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking
32、 for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535,
33、appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.6 Certificate of compliance. For dev
34、ice classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approve
35、d source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or f
36、or device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delive
37、red to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device
38、class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device
39、 class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER C
40、OLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 1, 3 1/ 1.0 VDD= 5 V VIN= 0.0 V or VDDAll 2 1/ 30 1, 3
41、1/ 2.0 VDD= 10 V VIN= 0.0 V or VDDAll 2 1/ 60 1, 3 1/ 2.0 VDD= 15 V VIN= 0.0 V or VDDAll 2 1/ 120 1 2.0 VDD= 20 V, VIN= 0.0 V or VDDAll 2 200 M, D, P, L, R 2/ All 1 7.5 Supply current IDDVDD= 18 V, VIN= 0.0 V or VDDAll 3 2.0 A 1 2.6 2 1/ 1.8 VDD= 4.5 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 3.3 1 3.2 2
42、 1/ 2.4 VDD= 5 V VO= 0.4 V VIN= 0.0 V or VDDAll 3 1/ 4.0 1 8.0 2 1/ 5.6 VDD= 10 V VO= 0.5 V VIN= 0.0 V or VDDAll 3 1/ 10 1 24 2 1/ 18 Low level output current (sink) IOLVDD= 15 V VO= 1.5 V VIN= 0.0 V or VDDAll 3 1/ 26 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or
43、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +
44、125C unless otherwise specified Device type Group A subgroups Min Max Units 1 -0.8 2 1/ -0.48 VDD= 5 V VO= 4.6 V VIN= 0.0 V or VDDAll 3 1/ -0.81 1 -3.2 2 1/ -1.55 VDD= 5 V VO= 2.5 V VIN= 0.0 V or VDDAll 3 1/ -2.6 1 -1.8 2 1/ -1.18 VDD= 10 V VO= 9.5 V VIN= 0.0 V or VDDAll 3 1/ -2.0 1 -6.0 2 1/ -3.1 H
45、igh level output current (source) IOHVDD= 15 V VO= 13.5 V VIN= 0.0 V or VDDAll 3 1/ -5.2 mA VDD= 5 V, no load 1/ 1, 2, 3 4.95 VDD= 10 V, no load 1/ 1, 2, 3 9.95 Output voltage, high VOHVDD= 15 V, no load 3/ All 1, 2, 3 14.95 V VDD= 5 V, no load 1/ 1, 2, 3 0.05 VDD= 10 V, no load 1/ 1, 2, 3 0.05 Outp
46、ut voltage, low VOLVDD= 15 V, no load All 1, 2, 3 0.05 V VDD= 5 V VOH 4.5 V, VOL9.0 V, VOL13.5 V, VOL4.5 V, VOL9.0 V, VOL13.5 V, VOLVDD/2 VOL VDD/2 V 9 60 Transition time 4/ VDD= 5.0 V, VIN= VDDor GND 10, 11 81 VDD= 10 V, VIN= VDDor GND 9 1/ 40 tTHLVDD= 15 V, VIN= VDDor GND All 9 1/ 30 ns 9 160 VDD=
47、 5.0 V, VIN= VDDor GND 10, 11 216 VDD= 10 V, VIN= VDDor GND 9 1/ 80 tTLHVDD= 15 V, VIN= VDDor GND All 9 1/ 60 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96637 DEFENSE SU
48、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limits Test Symbol Conditions -55C TC +125C unless otherwise specified Device type Group A subgroups Min Max Units 9 110 VDD= 5.0 V, VIN= VDDor GND All 10, 11 149 M, D, P, L, R 2/ All 9 149 VDD= 5 V, VIN= 10 V 9 1/ 100 VDD= 10 V, VIN= 10 V 9 1/ 55 VDD= 5 V, VIN= 15 V 9 1/ 100 tPHLVDD= 15 V, VIN= 15 V All 9 1/ 30 ns 9 140 VDD= 5.0 V, VIN= VDDor GND All 10, 11 189 M, D, P, L, R 2/ All 9 189 VDD= 5
