1、 SUD-5962-96649 REV B = b OLL7723 7T7 NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR ME DOCUMENT LISTED. 1. DATE (WMMDD) 97-08-08 I ublic reporting burden for this collecuoCi is estimated to average 2 hours per response, induding the time for mviewing wtnictions, sear
2、ching ewisting data sources, gathering and maintaining the dala needed, and completing and reviewing the dieclion of information. Send comments regarding this burden estimate or any other aspect ofthis cdlection of information, nduding suggestions for reducing this burden, to Department of Defense,
3、Washingtian Headquaiters Services, Directorate for nformation Operations and Reports, 1215 Jeiferson Davis Highway, Suite 1204, Arlington, VA 222024302, and to the office of danagement and Budget, Papenwork ReducfKNi Projet3 (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN IOUR COMPLETED FORM
4、TO EITHER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENT SSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS =OW. 3. TITLE OF DOCUMENT HICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, -TAGE ARALLEL INPARALLEL OUT SHIFT REGISTER, MONOLITHIC SIL
5、ICON b. ADDRESS (Streel, Ci add W. Revisions description column; add Changes in accordance with NOR 59624342997. Revisions date column; add 97-0&08. Revision levei Madi5 MEV/(cm2/mg) i/ 5 x IO8 Rads(Si)/s 5/ 2 x IO8 Rads(Si)/s 5/ 5 x 1011 Rads(Si)/s U I x io1* neutrons/cm2 m. Unless otherwise specif
6、ied, the following listed in that issue of the Department of Defense Index form a part of this drawing to the extent specified SPECIFICATION MI LI TARY MIL-1-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microe
7、lectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. - 1/ Stresses above the absolute maximun rating may cause permanent damage to the device. maximun levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are refe
8、renced to Vss. 1/ The limits for the parameters specified herein shall apply over the full specified V, range and case temperature range of -55C to +125“C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based
9、 on BJA) at the following rate: Extended operation at the Case E . 13.7 mU/“C Casex . 8.8mU/“C U Guaranteed by design or process but not tested. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57b2-bb49 b 00822b3 760 SIZE ST
10、ANDARD A MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 BULLETIN MILITARY 5962-96649 REVISION LEVEL SHEET 4 MIL-BUL-103 - List of Standard Microcircuit Drawings (SMDIS). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Mi Litary Drawings. (Copies of the specification, standar
11、ds, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. ) 2.2 Order of Drecedencp. In the event of a conflict between the text of this drawing and the reference
12、s cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Jtw reauirementg . The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as sp
13、ecified herein. The individual item requirements for device classes Q and V shall be in accordance with MIL-1-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. plan shall not affect the form, fit, or function as described herein. The modification
14、in the QM 3.2 Desian. const ruction. and Dhvsical dimensi ona. The design, construction, and physical dimensions shall be as specified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes P and V herein. 3.2.1 Case outlines . The case outlines shall be in accordance
15、with 1.2.4 herein. 3.2.2 Jerm inal connections . 3.2.3 Jruth tabk. 3.2.4 miation test connectipns . The radiation test connections shall be as specified in table 111 herein. 3.3 Electrical wrformance characteristics and oostirradiation oarawter limits . Unless otherwise specified The terminal connec
16、tions shall be as specified on figure 1. The truth table shall be as specified on figure 2. herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test reauirem
17、ents . The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Markim. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 he
18、rein). MIL-BUL-103. In addition, the manufacturers PIN may also be marked as listed in Marking for device classes Q and V shall be in accordance with MIL-1-38535. . 3.5.1 Certificationlcornal iance mark. The compliance mark for device class M shall be a V as required in MIL-STD-883 (see 3.1 herein).
19、 in MIL-1-38535. The certification mark for device classes P and V shall be a WMLBL or Wi as required 3.6 n e. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). classes Q and
20、V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The certificate of corrpliance sunitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the
21、manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-1-38535 and the requirements herein. 3.7 Certificate of confo rm . For device _ A certificate of conformance as required for device class M in MIL
22、-STD-883 (see 3.1 herein) or for device classes Q and V in MIL-1-38535 shall be provided with each lot of microcircuits delivered to this drawing. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96649 = 9999996 0082264
23、bT7 = 1 4.2.1 Additional criteria for device class M. l a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upo
24、n request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA +125“C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 fifiV. a.
25、 The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturerls Technolo
26、gy Review Board (TRB) in accordance with MIL-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. Interim
27、 and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix B of MIL-1-38535 or as modified in the device manufacturerls quality management (GIM) plan. b. c. , be
28、in accordance with MIL-1-38535. 4.3 Qualification inswction for device cla sses P and y . Qualification inspection for device classes P and V shall Inspections to be performed shall be those specified in MIL-1-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). .uali
29、fication insDection. 4.3.1 E Lect rostat ic discharse sensitivitv (ESDS) a ESDS testing shall be performed in . accordance with MIL-STD-883, method 3015. process or design changes which may affect ESDS Classification. ESDS testing shall be measured only for initial qualification and after 4.4 Confor
30、mance inswct ion. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, 8, C, D, and E inspecti
31、ons (see 4.4.1 through 4.4.4). Technology conformance inspection for classes P and V shall be in accordance with MIL-1-38535 or as specified in the QM plan including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-1-38535 permits alternate in-line control te
32、sting. 3.8 Notification of chanse for device class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 yerification and rev iew for device class y , For device class
33、M, DESC, DESCs agent, and the acquiring activity Offshore documentation retain the option to review the manufacturers facility and applicable required documentation. shall be made available onshore at the option of the reviewer. microcircuit group nunber 40 (see MIL-1-38535, appendix A). . 3.10 Micr
34、ocircuit arour, assianment for device class Y Device class M devices covered by this drawing shall be in 4. QUALITY ASSURANCE PROVISIONS 4.1 Sanmliag and bwct ion. For device class M, sampling and inspection procedures shall be in accordance with For device classes Q and V, sampling and inspection p
35、rocedures shall be in accordance MIL-STD-883 (see 3.1 herein). with MIL-1-38535 or as modified in the device manufacturers quality management (QM) plan. plan shall not affect form, fit, or function as described herein. The modification in the PM 4.2 Screenina . . For device class M, screening shall
36、be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance insp
37、ection. STAN DARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 5962-96649 I SHEET 1 REVISION LEVEL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96649 = 9999996 0082265 533 Test Supply cur
38、rent LO“ level output furrent (sink1 High level output current (source) TABLE I. Electrical Derformance characwistics. See footnotes at end of table. Conditions -55C 5 T, +125“C unless otherwise specified V, 5 v VIN = 0.0 V or VDD VDD = 10 v VIN = 0.0 V or V, VDD = 15 V VIN = 0.0 V or VDD VDD = 20 V
39、, VIN = 0.0 v or v, VDD 18 V, VIN = 0.0 V or VDD VDD=5V Vo 0.4 V V, = 0.0 V or V, VDD = 10 v Vo = 0.5 V VIN = 0.0 V or V, V, = 15 V Vo = 1.5 V VIN = 0.0 V or V, v, 5 v Vo = 4.6 V VIN = 0.0 V or VDD v, = 5 v V, = 2.5 V VIN = 0.0 V or V, v, = 10 v vo = 9.5 v VIN = 0.0 V or VDD 5962-96649 REVISION LEVE
40、L SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I OH V, = 15 V V, = 13.5 V VIN = 0.0 V or V, 1, 2, 3 1, 2, 3 3.5 7 1 2 -100 - 1000 STANDA
41、RD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE A 5962-96649 REVISION LEVEL SHEET 7 TABLE 1. Ele ctr ical Erfo rmance ch aracteristica - Continued. Test 1 Condi ti ons unless otherwise specified -55C 5 Tc 5 +125“C 3evice type - Al 1 Group A Limits subgroups Unit Hig
42、h level output current (source) II I -3.5 2J.I I I -2.4 VoH I VDD = 5 V, no load 1/ 1, 2, 3 I 4.95 I Al 1 Al 1 - Al 1 Output voltage, high I VDD = 10 V, no load J.I 1, 2, 3 I 9.95 I v, = 15 v, no load 2/ VOL Output voltage, low V, = 5 V, no load 1/ V, = 10 V, no load JJ V, = 15 V, no load v, = 5 v v
43、oH 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 4.5 V, VOL 9-0 V, VOL 13.5 V, voL 1.5 v I Input leakage current, 1 ow nA V 3 I -100 I Input leakage current, high II I 100 Al 1 Al 1 Al 1 Al 1 - Al 1 Al 1 Al 1 21 I 1000 N threshold voltage VNTH AV- N threshold voltage, P threshold voltage delta - i1 .o VPTH P th
44、reshold voltage, delta DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96649 9999996 0082267 306 = Al 1 Al 1 10, 11 9 9u 91/ 9 10, 11 91/ 91/ 9 2 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, O
45、HIO 45444 SIZE A 5962-96649 REVISION LEVEL SHEET 8 TABLE I. Electrical wrfo rmance characteristia - Continued. Conditions unless otherwise specified -55C 5 Tc 5 +12SC VDD = 2.8 V, VIN VDD or GND Test Unit Funct i ona 1 tests V VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = vDD or GND All I 8A I ALL
46、I 7 I All I 7 I - Input capacitance Propagation delay 4/ clock to Q Any input, See 4.4.1 7.5 500 675 675 200 150 460 - PF ns 91/ M, 0, L, R U VDD = 10 V, VIN = V, or GND VDD = 15 V, VIN = VDD or GND ns Propagation delay # reset to P VDD 5 V, VIN = VDD or GND ALL I 9 I ns 621 62 1 200 160 200 - M, D,
47、 L, R VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND VDD = 5 VI VIN = VDD or GND ns ns Transition time w 270 VDD = 10 V, VIN = VDD or GND VDD = 15 V, VIN = VDD or GND 1 O0 80 Maximum clock input frequency VDD = 5 V, VIN = V, or GND MHz I IO, 11 I 1.48 VDD = 15 V, VIN = V, or GND Maximum c
48、lock rise and fall time 4/ u PS VDD = 5 V, VIN = VDD or GND VDD = 10 V, VIN = V, or GND VDD = 15 V, VI, = VDD or GND 15 15 15 Minim dala setup # time, J/K lines ns VDD = 5 V, VIN = VDD or GND VDD 10 V, VIN = VDD or GND VDD 15 V, VIN = V, or GND 220 80 60 See footnotes at end of table. DESC FORM 193A
49、 JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-76649 9999996 0082268 2Y2 l Group A Limits subgroups Min Max 9u 140 91/ 50 9u 40 91/ 250 Test Symbol Minimum data setup &/ time, parallel-in lines Condi ti ons -55C 5 T, +125OC Devi ce unless otherwise specified type Minimum reset pulse width t52 t“l Minimum c
