1、LTR A DESCRIPTION DATE (YR-MO-DA) APPROVED Changes in accordance with NOR 5962-R231-97. 97-02-28 Monica L. Poelking B C PMIC NIA Changes in accordance with NOR 5962-R418-97. Update boilerplate and appendix A. Editorial changes throughout. - tmh 97-08-1 4 Monica L. Poelking 00-06-02 Monica L. Poelkin
2、g PREPAREDBY Larry T. Gauder I REV STATUS OF SHEETS R EV cccccccccccccc SHEET 12 3 4 5 6 7 8 9 1011 1213 14 MICROCIRCUIT Monica L. Poelking DRAW1 NG STANDARD I APPROVEDBY I DEFENSE SUPPLY CENTER COLUMBUS CHECKED BY COLUMBUS, OHIO 43216 Monica L. Poelking THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPA
3、RTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE - 95-1 2-1 5 MICROCIRCUIT, DIGITAL, RADIATION BI DI RECTI ON AL PAR AL LE US ER I AL INPUT/OUTPUT BUS REGISTER, MONOLITHIC SILICON HARDENED CMOS, 8-STAGE STATIC AMSC NIA I REVISION LEVEL C 5962-96678 I I I I SHEET 1 OF 22 DSCC FORM 2233 APR 97 DISTRI
4、BUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E225-00 Licensed by Information Handling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (de
5、vice classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. REVISION LEVEL SHEET C 2
6、1.2 m. The PIN is as shown in the following example: 96678 Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked
7、devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tv
8、pefs). The device type(s) identify the circuit function as follows: Device tvpe Generic number Circuit function o1 02 4034B 4034BN Radiation hardened CMOS 8-stage static bidirectional parallel/serial input/ output bus register Radiation hardened CMOS 8-stage static bidirectional parallel/serial inpu
9、t/ output bus register with neutron irradiated die 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant
10、, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle J CDIP2
11、-T24 24 Dual-in-line package X CD FP4- F24 24 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96678 USLL tUHM 2234 APR 97 Licensed by Informatio
12、n Handling Services1.3 Absolute maximum ratinas. I/ 21 31 Supply voltage range (VDD) -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD + 0.5 Vdc DC input current, any one input 11 O mA Device dissipation per output transistor 1 O0 mW Storage temperature range (TSTG) -65C to +150C Lead tempe
13、rature (soldering, 1 O seconds) . +265“C Thermal resistance, junction-to-case (Jc): Case J . 25“CNV Case X . 24“CNV Case J . 65“CNV Case X . 89“CNV Junction temperature (TJ) . +175“C Maximum power dissipation at TA = +125“C (PD): A/ Case J . 0.77 W Case X . 0.56 W Thermal resistance, junction-to-amb
14、ient JA): DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.4 Recommended operatina conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Input voltage (VIN) Output voltage (VOUT) . O V to VDD Radiation features: Case operating temperature range (TC) -55C to +125“C Total dose . 1 x
15、 1 O5 Rads (Si) Single event phenomenon (SEP) effective Dose rate upset (2 Dose rate latch-up Dose rate survivab Neutron irradiated E/ . 1 x 1 O linear energy threshold, no upsets or latchup (see 4.4.4.5) . 75 MEV/(cm2/mg) s/ 5 x 10 Rads(Si)/s 5/ 2 x 10 Rads(Si)/s 5/ 5 x 10:; Rads(Si)/s $/ neutronsk
16、m 2. APPLICABLE DOCUMENTS REVISION LEVEL SHEET C 3 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in t
17、he issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 -
18、 Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. - - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance
19、and affect reliability. - 2/ Unless otherwise specified, all voltages are referenced to VSS. - 3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55C to +125“C unless otherwise noted. - 4/ If device power exceeds package dis
20、sipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: - 5/ Guaranteed by design or process but not tested. - 6/ Device type 02 only. Case J 15.4 mW/“C Case X 11.2 mW/“C STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96678 USLL tUHM 2234 APR
21、 97 Licensed by Information Handling ServicesHANDBOOKS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DEPARTMENT OF DEFENSE REVISION LEVEL SHEET C 4 MIL-HDBK-103 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, co
22、pies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the t
23、ext of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38
24、535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendi
25、x A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document. 3.2 Desian, construction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-3853
26、5 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth t
27、ables shall be as specified on figure 2. 3.2.4 Block diaqrams. The block diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein herein. 3.3 Electrical performance characteristics and postirradiation param
28、eter limits. Unless otherwise specified herein, the electrical petformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the
29、subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN
30、number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device cla
31、ss M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6
32、 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer
33、in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requiremen
34、ts of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided wi
35、th each lot of microcircuits delivered to this drawing. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96678 USLL tUHM 2234 APR 97 Licensed by Information Handling Services3.8 Notification of chancie for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein
36、) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review t
37、he manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.1 O Microcircuit ciroup assicinment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (se
38、e MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS REVISION LEVEL SHEET C 5 4.1 Samplinci and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The m
39、odification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, an
40、d shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device
41、class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the in
42、puts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table IIA herein. b. 4.2.2 Additional criteria for device classes Q and V. a. Th
43、e burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology
44、 Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-S
45、TD-883. b. c. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualifi
46、cation inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection f
47、or classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-
48、38535, appendix A and as specified herein. Inspections to be petformed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96678 USLL tUHM 2234 APR 97 L
49、icensed by Information Handling ServicesTest DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Supply current REVISION LEVEL SHEET C 6 Low level output current (sink) High level output current (source) See notes at end of Symbol DD o1 OH Ae. TABLE I. Electrical performance characteristics. Conditions unless otherwise specified -55C 5 Tc 5 +125“C VDD = 5 V VIN = 0.0 V or VDD VDD = 10 V VIN = 0.0 V or VDD VDD = 15 V VIN = 0.0 V or VDD VDD = 20 V, VIN = 0.0 V or VDD M, D, L, R 21 VDD = 18 V, VIN = 0.0 V or VDD VDD = 5 V Vo = 0.4 V VIN = 0.0 V or VDD VDD = 10 V vo = 0.5
