DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf

上传人:eastlab115 文档编号:701024 上传时间:2019-01-01 格式:PDF 页数:24 大小:155.10KB
下载 相关 举报
DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf_第1页
第1页 / 共24页
DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf_第2页
第2页 / 共24页
DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf_第3页
第3页 / 共24页
DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf_第4页
第4页 / 共24页
DLA SMD-5962-96692 REV H-2011 MICROCIRCUIT MEMORY DIGITAL FLASH EPROM 512K x 8-BIT MONOLITHIC SILICON.pdf_第5页
第5页 / 共24页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED D Changed figure 1; Removed note 3 for case outlines X and Y. Added vendor cage 88379 for device types 01 through 04. -sld 99-03-29 K. A. Cottongim E Added device type 05. Updated drawing to the latest requirements of MIL-PRF-38534. -sld 03-03-17 R

2、aymond Monnin F Figure 1; case outline X, changed the dimension “D“ min from 1.654 inches to 1.6 inches. Added cage 0EU86 for device types 01 through 04. Editorial changes troughout. -sld 04-10-21 Raymond Monnin G Added device type 06. Added case outline Z. Editorial changes throughout. -sld 05-02-1

3、8 Raymond Monnin H Updated drawing paragraphs. -sld 11-08-24 Charles F. Saffle REV SHEET REV H H H H H H SHEET 15 16 17 18 19 20 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L. Duncan DLA LAND AND MARITIME STANDARD MICROCIRCUI

4、T DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Kendall A. Cottongim MICROCIRCUIT, MEMORY, DIGITAL, FLASH EPROM, 512K x 8-BIT, MONOLITHIC SILIC

5、ON DRAWING APPROVAL DATE 96-04-22 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-96692 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E372-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96692 DLA LAND AN

6、D MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part

7、 or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 96692 01 H T X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (

8、see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA d

9、evice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 F512K8-150, F040-150 EPROM, FLASH, 512K x 8-bit 150 ns 02 F512K8-120, F040-120 EPROM, FLASH, 512K x 8-bit 120 ns 03 F512K8-090, F040-90 EPROM, FLASH, 5

10、12K x 8-bit 90 ns 04 F512K8-070, F040-70 EPROM, FLASH, 512K x 8-bit 70 ns 05 F512K8-060, F040-60 EPROM ,FLASH, 512K x 8-bit 60 ns 06 F040-55 EPROM, FLASH, 512K x 8-bit 55 ns 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level.

11、All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. Thi

12、s level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening an

13、d In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) wit

14、h exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality

15、class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96692 DLA LAND AND MARITIM

16、E COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style T See figure 1 32 Ceramic flatpack, lead formed U See figure 1 32 Cera

17、mic flatpack X See figure 1 32 Co-fired ceramic, single cavity Y See figure 1 32 Co-fired ceramic, single cavity, SOJ Z CQCC1-N32 32 Rectangular leadless chip carrier 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC

18、) 2/ . -2.0 V dc to +7.0 V dc Signal voltage range (any pin except A9 ) 2/ -2.0 V dc to +7.0 V dc Power dissipation (PD) . 0.33 W maximum at 5 MHz Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Data retention 10 years minimum Endurance (write/erase cycles) 10,

19、000 cycles minimum A9 voltage for sector protect (VID) 3/ . -2.0 V dc to +14.0 V dc 1.4 Recommended operating conditions. Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input low voltage range (VIL) -0.5 V dc to +0.8 V dc Input high voltage range (VIH) +2.0 V dc to VCC+ 0.5 V dc Case operating te

20、mperature range (TC) . -55C to +125C A9 voltage for sector protect (VID) +11.5 V dc to +12.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless o

21、therwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended ope

22、ration at the maximum levels may degrade performance and affect reliability. 2/ Minimum DC voltage on input or I/O pins is -0.5 V dc. During voltage transitions, input may overshoot VSSto -2.0 V dc for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is VCC+ 0.5 V dc. During voltage

23、 transitions, outputs may overshoot to VCC+ 2.0 V dc for periods of up to 20 ns. 3/ Minimum DC input voltage on A9 pin is -0.5 V dc. During voltage transitions, A9 may overshoot VSSto -2.0 V dc for periods of up to 20 ns. Maximum DC input voltage on A9 is +13.5 V dc which may overshoot to +14.0 V dc

24、 for periods up to 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96692 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE STANDARDS M

25、IL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available on

26、line at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawi

27、ng takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-P

28、RF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, h

29、owever the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The

30、 design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth tabl

31、e(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Timing diagram(s). The timing diagram(s) shall be as specified on figures 4, 5, and 6. 3.2.5 Block diagram. The block diagram shall be as specified on figure 7. 3.2.6 Output load circuit. The output load circuit shall be as specified

32、on figure 8. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements s

33、hall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Programming procedure. The programming procedure shall be as specified by the manufacturer and shall be available upon request. 3.5 Marking of device(s). Marking of device(s) shall be in a

34、ccordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

35、2-96692 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 3.7 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the i

36、nitial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacture

37、r and be made available to the preparing activity (DLA Land and Maritime -VA) upon request. 3.8 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DLA Land and Mar

38、itime -VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.9 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 3.10 Endurance.

39、A reprogrammability test shall be completed as part of the vendors reliability monitors. This reprogrammability test shall be done for the initial characterization and after any design process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor spec

40、ific, but shall guarantee the number of program/erase cycles listed in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or preparing activity. 3.11 Data retention. A data

41、retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for initial characterization and after any design process change which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years l

42、isted in section 1.3 herein over the full military temperature range. The vendors procedure shall be kept under document control and shall be made available upon request of the acquiring or preparing activity. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be i

43、n accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

44、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96692 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA+125C unless otherwise specified Group A subgroups Device types Limits U

45、nit Min Max DC parameters Input leakage current ILIVCC= 5.5 V dc, VIN= GND to VCC1,2,3 All 10 A Output leakage current ILOVCC= 5.5 V dc, VIN= GND to VCC1,2,3 All 10 A VCCactive current for read ICC1CS = VIL, OE = VIH, f = 5 MHz, VCC= 5.5 V dc1,2,3 All 35 mA VCCactive current for program or erase 3/

46、ICC2CS = VIL, OE = VIH, VCC= 5.5 V dc 1,2,3 All 50 mA VCCstandby current ISBVCC= 5.5 V dc , CS = VIH, f = 5 MHz 1,2,3 All 1.6 mA Input low level 3/ VIL1,2,3 All 0.8 V Input high level 3/ VIH1,2,3 All 2.0 V Output low voltage VOLVCC= 4.5 V, IOL= 8.0 mA 1,2,3 All 0.45 V Output high voltage VOHVCC= 4.5

47、 V, IOH= -2.5 mA 1,2,3 All 0.85 x VCCV Dynamic characteristics Address capacitance 3/ CADVIN= 0 V, f = 1.0 MHz, TA= +25 C 4 All 15 pF Output enable 3/ capacitance COEVIN= 0 V, f = 1.0 MHz, TA= +25C 4 All 15 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking

48、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96692 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA+125C unless otherwise specified Group A subgroups Device types Limits Unit Min Max Dynamic characterisitics - Continued Write enable capacitance 3/ CWEVIN= 0 V, f = 1.0 MHz,

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1