1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R327-97. 97-10-22 Monica L. PoelkingB Changes in accordance with NOR 5962-R163-98.98-09-02 Monica L. PoelkingC Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorialchanges throughout. - tmh00-06-26
2、 Monica L. PoelkingREVSHEETREV CCCCCCCCCCSHEET 15 16 17 18 19 20 21 22 23 24REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Thanh V. NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLE
3、FOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-12-19MICROCIRCUIT, DIGITAL, RADIATIONHARDENED ADVANCED CMOS, DUAL J-K FLIPFLOP WITH SET AND RESET, TTL COMPATIBLEINPUTS, MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685
4、962-96714SHEET1 OF 24DSCC FORM 2233APR 97 5962-E340-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96714DEFENSE SUPPLY CENTER CO
5、LUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are availabl
6、e and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 F 96714 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal R
7、HA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with
8、 the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device
9、 type Generic number Circuit function01 ACTS112 Radiation hardened SOS, advanced CMOS,dual j-k flip flop with set and reset, TTLcompatible inputs02 ACTS112-02 1/ Radiation hardened SOS, advanced CMOS,dual j-k flip flop with set and resetTTL compatible inputs1.2.3 Device class designator. The device
10、class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certific
11、ation and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleE CDIP2-T16 16 dual-in-line packageX CDFP4-F16 16 flat package1.2.5 Lead finish. The lead finish is as spec
12、ified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.1/ Device type -02 is the same as device type -01 except that the device type -02 products are manufactured at an overseaswafer foundry. Device type -02 is used to positively identify, by marketing part
13、number and by brand of the actual device,material that is supplied by an overseas foundryProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96714DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELC
14、SHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VCC). -0.5 V dc to +7.0 V dcDC input voltage range (VIN). -0.5 V dc to VCC + 0.5 V dcDC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dcDC input current, any one input (IIN) . 10 mADC output current, any one
15、 output (IOUT) 50 mAStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case outline E 24C/WCase outline X 29C/WThermal resistance, junction-to-ambient (JA):Case outline E 73C/WCase outline X 114C/WJunction temperatur
16、e (TJ) . +175CMaximum package power dissipation at TA = +125C (PD): 4/Case outline E 0.68 WCase outline X 0.44 W1.4 Recommended operating conditions. 2/ 3/Supply voltage range (VCC). +4.5 V dc to +5.5 V dcInput voltage range (VIN). +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximu
17、m low level input voltage (VIL). 0.8 VMinimum high level input voltage (VIH) VCC/2Case operating temperature range (TC) -55C to +125CMaximum input rise and fall time at VCC = 4.5 V (tr, tf) 10 ns/VRadiation features:Total dose 3 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy thre
18、shold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/Dose rate upset (20 ns pulse) . 1 x 1011Rads (Si)/s 5/Latch-up None 5/Dose rate survivability . 1 x 1012Rads (Si)/s 5/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and hand
19、books form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT
20、 OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all v
21、oltages are referenced to GND.3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55C to +125C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the der
22、ating isbased on JA) at the following rate:Case E 13.7 mW/CCase X 8.8 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96714DEFENSE SUPPLY CENTER COLUMBUSCOLUM
23、BUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Sta
24、ndard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of pr
25、ecedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirem
26、ents. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein.
27、The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical
28、dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connecti
29、ons. The terminal connections shall be as specified on figure 1.3.2.3 Truth table. The truth table shall be as specified on figure 2.3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be
30、as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and posti
31、rradiation parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Mark
32、ing. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“
33、 on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certific
34、ation mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIR
35、CUIT DRAWINGSIZEA5962-96714DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requiremen
36、ts of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved sour
37、ce of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as requ
38、ired for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits deliveredto this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein)
39、 involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentati
40、on. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 38 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sam
41、pling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For d
42、evice class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. Fo
43、r device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit
44、shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intes
45、t method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in th
46、edevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activi
47、ty upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screenin
48、g for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be
49、 those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96714DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSH
