1、LTR A DESCRIPTION DATE (YR-MO-DA) APPROVED 97-1 0-22 Monica L. Poelking Changes in accordance with NOR 5962-R334-97. B C PMIC NIA Changes in accordance with NOR 5962-R007-99. Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 98-1 0-22 Monica L. Poelking
2、00-07-03 Monica L. Poelking I PREPAREDBY REV STATUS OF SHEETS R EV cccccccccccccc SHEET 12 3 4 5 6 7 8 9 1011 1213 14 STANDARD APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 95-1 2-29 Thanh V. Nguyen
3、 CHECKED BY COLUMBUS, OHIO 43216 DEFENSE SUPPLY CENTER COLUMBUS MICROCIRCUIT DRAW1 NG Thanh V. Nguyen - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, ERROR DETECTION AND CORRECTION CIRCUIT WITH INPUTS, MONOLITHIC SILICON THREE-STATE OUTPUTS, TTL COMPATIBLE REVISION LEVEL AMSC NIA C SIZE
4、CAGE CODE A 67268 5962-96721 SHEET 1 OF 24 Licensed by Information Handling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (d
5、evice class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. REVISION LEVEL SHEET C 2 1.2 m. The PIN is as shown in the following ex
6、ample: 96721 Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA l
7、evels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit
8、 function as follows: Device tvpe o1 02 Generic number ACTS 63 O ACTS630-02 11 Circuit function Radiation hardened SOS, advanced CMOS, error detection and correction circuit with three-state outputs, nL compatible inputs Radiation hardened SOS, advanced CMOS, error detection and correction circuit w
9、ith three-state outputs, nL compatible inputs 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non
10、-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle X CDIP2-T28
11、28 dual-i n-line package Y CDFP3-F28 28 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. - - 11 Device type -02 is the same as device type -01 except that the device type -02 products are manu
12、factured at an overseas wafer foundry. Device type -02 is used to positively identify, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Hand
13、ling Services1.3 Absolute maximum ratinas. 1/ 21 31 Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dc DC input current, any one input (IIN) . 11 O mA 150 mA DC output current, DEF or SE
14、F output (IOUT) and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. Devices supplied to this drawing meet all levels M, D, L, R, and F of irradiation. However, this device is only tested at the “F“ level. Pre and post ir
15、radiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25“C. ForceJMeasure functions may be interchanged. This test may be performed either one input at a time (preferred method) or with all input pins s
16、imultaneously at VIN = Vcc - 2.1 V (alternate method). Classes Q and V shall use the preferred method. When the test is performed using the alternate test method, the maximum limit is equal to the number of inputs at a high lTL input level times 1 .O mA; and the preferred method and limits are guara
17、nteed. For the preferred method, a minimum of one input shall be tested. All other inputs shall be guaranteed, if not tested, to the limits specified in table I herein. This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect th
18、is characteristic. The test vectors used to verify the truth tables shall, at a minimum, test all functions of each input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth tables in figure 2 herein. For VOUT measurements, L 0.5 V an
19、d H 2 4.0 V. AC limits at Vcc = 5.5 V are equal to the limits at Vcc = 4.5 V. For propagation delay tests, all paths must be tested. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesDevice type I All CB5 Case outlines I X and Y xxxxx
20、xxx Term inal Terminal Term inal Term inal number symbol number symbol I DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REVISION LEVEL SHEET C 10 DEF D BO DBl D B2 D B3 D B4 D B5 D B6 D B7 D B8 D B9 DBl O DBll GND 15 16 17 18 19 20 21 22 23 24 25 26 27 28
21、DB12 DB13 DB14 DB15 C B5 C B4 C B3 C B2 CBl C BO so s1 SEF vcc FIGURE 1. Terminal connections. Check word generation FIGURE 2. Truth tables. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesControl functions Syndrom e EDAC function C
22、heck word Error locations I I Error syndrome codes DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET C 11 Error functions H = High voltage level L = Low voltage level FIGURE 2. Truth tables - Continued. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234
23、APR 97 Licensed by Information Handling Services3.0 V 2.7 V DBn or SI 1.3 V 0: ; INPUT OH 1.3 V CBm, DEF, or SEF OUTPUT VOL - DBn or CBm OUTPUT 0.0 v + PZL = vcc 0.2 vcc VOL 1.3 V A r, VOH 0.8 Vcc z rtPHZ DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DBn or CBm OUTPUT REVISION LEVEL SHEE
24、T C 12 L -20.0 v FIGURE 3. Switchinq waveforms and test circuit. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Handling Services1.3 V 0.0 v DBn or CBm INPUT II DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 3.0 V 1.3 V 0.0 v SI INPUT RE
25、VISION LEVEL SHEET C 13 DUT NOTES: 1. 2. 3. 4. 5. When measuring tPZL and tPLZ, S1 is closed and S2 is open. When measuring tpLH, tpHL, tpZH, and tpHZ, S1 is open and S2 is closed. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). RL = 500a or equivalent. Input signal from
26、pulse generator: VIN = 0.0 V to 3.0 V; PRR 10 MHz; t, 3.0 ns; tf 3.0 ns; t, and tf shall be measured from 0.3 V to 2.7 V and from 2.7 V to 0.3 V, respectively. FIGURE 3. Switchinq waveforms and test circuit - Continued. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licen
27、sed by Information Handling Services4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line cont
28、rol testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see
29、 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Parameters 11 a. b. Tests shall be as specified in table IIA herein For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of t
30、he device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). Subgroup 4 (CIN, and COUT measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. CIN, Cshall be measured
31、 between the designated terminal and GND at a frequency of 1 MHz. For CIN and COUT the tests shall be sufficient to validate the limits defined in table I herein . c. Delta limits TABLE IIA. Electrical test requirements. MIL-PRF-38535, table Ill) method 5005 table I 11 PDA applies to subgroup 1 and
32、7. 21 PDA applies to subgroups 1, 7, 9 and deltas. - 31 Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see Table I) Icc lOL/lOH lOZL/lOZH 130 pA 11 5% f200 nA DEFENSE SUPPLY CENT
33、ER COLUMBUS COLUMBUS, OHIO 4321 6-5000 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. REVISION LEVEL SHEET C 14 STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Handling Serv
34、ices4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring
35、activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 Of MIL-STD-883. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 b. TA = +125“C, minimum. REVISION LEVEL SHEET
36、 C 15 c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan
37、 in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, o
38、utputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is
39、 required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dos
40、e irradiation testing shall be performed in accordance with MIL-STD-883 method 1 O1 9 and as specified herein. 4.4.4.1.1 Accelerated aqinq test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter li
41、mits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25“C 15“c. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced lat
42、chup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes wh
43、ich may effect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL- STD-883 and herein (see 1.4 herein). a. Transient dose rate upset testing shall be performed at initial qualification and after an
44、y design or process changes which may effect the RHA performance of the devices. Test 1 O devices with O defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-
45、38535. 4.4.4.4 Sinde event phenomena SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification
46、and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60“ to the normal, inclusive (.e. O“ a b. The fluence shall be t 1
47、O0 errors or t 1 O6 ions/cm2. c. The flux shall be between 10 and 1 O5 ions/cm2/s. The cross-section shall be verified to be flux independent by angle a 60“). No shadowing of the ion beam due to fixturing or package related effects is allowed. measuring the cross-section at two flux rates which diff
48、er by at least an order of magnitude. d. The particle range shall be t 20 microns in silicon. e. The test temperature shall be +25“C and the maximum rated operating temperature 11 0C. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96721 USLL tUHM 2234 APR 97 Licensed by Information Handling Services
49、f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection shall be as specified as follows: 4.5.1 Voltaqe and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Table 111. Irradiation test connections. L/ REVISION LEVEL SHEET C 16 Ground Vcc=5 V f 0.5 V 2, 3, 4,
