1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add paragraph 3.1.1 and die appendix A. Changes in accordance with NOR 5962-R104-98. - rrp 98-05-11 R. Monnin B Add class T requirements. Update boilerplate. Redrawn. - rrp 98-12-09 R. Monnin C Made changes to 1.5 and added new RHA designator P i
2、n table I. - rrp 99-04-19 R. Monnin D Add device type 02. Make changes to 1.2.2, 1.5, table I, figure 1, and appendix A. - ro 99-11-24 R. Monnin E Made changes to figure 3. - rrp 00-01-03 R. Monnin F Redraw. Update drawing to current requirements. - drw 11-01-05 Charles F. Saffle G Add device type 0
3、3. Add new footnote to paragraph 1.2.2. Delete dose rate burnout paragraphs and Table III. Add paragraph 2.2 and SEP Table IB. Make changes to paragraphs 3.2.5, 3.10 and 4.4.4.4. - ro 12-05-10 Charles F. Saffle REV SHEET REV G G G G G G G G G G G G SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV STATU
4、S REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Sandra Rooney DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF T
5、HE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, RADIATION HARDENED, CMOS, MULTIPLEXER WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-01-10 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96742 SHEET 1 OF 26 DSCC FORM
6、 2233 APR 97 5962-E065-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing
7、documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part
8、or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the in
9、tended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 96742 02 V E C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designa
10、tor. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) i
11、ndicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-508ARH Radiation hardened DI CMOS single 8-channel MUX with overvoltage protection 02 1/ HS-508BRH Radiation hardened dielectrically isolate
12、d (DI) BiCMOS single 8-channel MUX with overvoltage protection 03 1/ HS-508BEH Radiation hardened dielectrically isolated (DI) BiCMOS single 8-channel MUX with overvoltage protection 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level
13、 as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualificat
14、ion to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. _ 1/ This device is BiCMOS as it utilizes both bipolar and CMOS technologies in the design and manufacturing processes. Provided by IHSNot for ResaleNo reproduction or networking permitte
15、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive design
16、ator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 2/ Supply voltage between +V and V . 40 V
17、 Supply voltage between +V and ground +20 V Supply voltage between -V and ground . -20 V Digital input overvoltage: +VEN, +VA. +VSUPPLY+ 4 V -VEN, -VA-VSUPPLY- 4 V Analog input overvoltage: +VS. +VSUPPLY+20 V -VS-VSUPPLY-20 V Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max) 40 mA Sto
18、rage temperature range -65C to +150C Maximum package power dissipation at TA= +125C (PD): 3/ Case outline E 0.67 W Case outline X 0.59 W Thermal resistance, junction-to-case (JC): Case outline E 12C/W Case outline X 25C/W Thermal resistance, junction-to-ambient (JA): Case outline E 75C/W Case outlin
19、e X 85C/W Lead temperature (soldering, 10 seconds) +275C Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Operating supply voltage (VSUPPLY) . 15 V Logic low level (VAL) +0.8 V Logic high level (VAH) +4.0 V Ambient operating temperature range (TA) . -55C to +125C _ 2/ Stresses a
20、bove the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the
21、following rates: Case outline E . 13.3 mW/C Case outline X . 11.76 mW/C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM
22、 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device classes Q and V: Device type 01 . 100 krads(Si) Device type 02 . 300 krads(Si) 4/ Device type 03 . 300 krads(Si) 5/ Device class T: Device type 01 . 100 krads(Si) Device type 02 . 100 krads(Si)
23、4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 03 50 krads(Si) 5/ Single event phenomena (SEP): Device type 01: No single event upset (SEU) occurs at an effective linear energy transfer (LET) (see 4.4.4.4) 110 (MeV/mg/cm2) 6/ Device types 02 and 03 . Not tested Single event
24、latch up (SEL) . No latch up 7/ Dose rate upset (20 ns pulse): Device type 01 . = 1 x 108rads(Si)/s Device types 02 and 03 Not tested 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to t
25、he extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test
26、 Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist
27、.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 4/ Device type 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the
28、noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) . 5/ Device type 03 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 10
29、19, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 6/ Guaranteed by process design, but not tested. 7/ Device types 01, 02, and 03 use dielectrically isolated (DI) technology and latch-up is physically not possible. Provided by IHSNot f
30、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this
31、document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradia
32、tion of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P.O. Box C700, 100 Bar Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the referenc
33、es cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in a
34、ccordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with
35、MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as spe
36、cified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3
37、Truth table. The truth table shall be as specified on figure 2. 3.2.4 Timing diagrams. The timing diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be ma
38、de available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shal
39、l apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.
40、2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall sti
41、ll be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as requir
42、ed in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO
43、43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C VAH= +4 V, VAL= 0.8 V, Group A subgroups Device type Limits Unit -V = -15 V, +V = +15 V unless otherwise specified Min Max Input leakage current address
44、, or enable pins IAH, IALMeasure inputs sequentially, ground all unused pins 1, 2, 3 All -1000 +1000 nA M, D, P, L, R, F 1 -1000 +1000 Leakage current into the source terminal of an “OFF” switch +IS(OFF)VS= +10 V, all unused inputs and outputs = -10 V, VEN= 0.8 V 1 All -10 +10 nA 2, 3 -50 +50 M, D,
45、P, L, R, F 1 -50 +50 -IS(OFF)VS = -10 V, all unused inputs and outputs = +10 V, VEN= 0.8 V 1 All -10 +10 nA 2, 3 -50 +50 M, D, P, L, R, F 1 -50 +50 Leakage current into the drain terminal of an “OFF” switch +ID(OFF)VD= +10 V, all unused inputs and outputs = -10 V, VEN= 0.8 V 1 All -10 +10 nA 2, 3 -2
46、50 +250 M, D, P, L, R, F 1 -250 +250 -ID(OFF)VD = -10 V, all unused inputs and outputs = +10 V, VEN= 0.8 V 1 All -10 +10 nA 2, 3 -250 +250 M, D, P, L, R, F 1 -250 +250 Leakage current into the drain terminal of an “OFF” switch with overvoltage applied +ID(OFF) overvoltage VS= +25 V, measure VD, VEN=
47、 0.8 V, all unused inputs to GND 1, 2, 3 All -2000 +2000 nA M, D, P, L, R, F 1 -2000 +2000 -ID(OFF) overvoltage VS= -25 V, measure VD, VEN= 0.8 V, all unused inputs to GND 1, 2, 3 All -2000 +2000 nA M, D, P, L, R, F 1 -2000 +2000 See footnotes at end of table. Provided by IHSNot for ResaleNo reprodu
48、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96742 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C VAH= +4 V, VAL= 0.8 V, Group A subgroups Device type Limits Unit -V = -15 V, +V = +15 V unless otherwise specified Min Max Leakage current from an “ON” driver into the switch (drain and source) +ID(ON)VS= VD= +10 V, VEN= 4.0 V, all unuse
