1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change the location of footnote 2/ under Table IIA in accordance with N.O.R. 5962-R038-97. 96-11-04 R. MONNIN B Add case outline X, paragraph 1.5, and radiation hardened requirements. Make changes to 1.2.4, 1.3, table I, figure 1, and 4.4.4. Redr
2、awn. - ro 99-12-06 R. MONNIN C Delete the radiation hardened circuits and make change to 3.2.3. - ro 01-06-12 R. MONNIN D Make changes to the output saturation voltage test conditions as specified under TABLE I. - ro 05-03-03 R. MONNIN E Delete the Accelerated aging and Dose rate burnout tests. Make
3、 changes to +ICC, -ICC, ILEAK, IBIAS, VOS, IOS, VIN, VSAT, AV, and CMRR tests as specified under Table I. Make changes to Table IIB. Add radiation hardened devices back to the document. - ro 08-09-03 R. HEBER F Add device type 02 tested at Low Dose Rate. Make changes to 1.2.2, 1.5, Table I, figure 1
4、, Table IIB, and 4.4.4.1. Add paragraph 3.1.1 and microcircuit die Appendix A. - ro 08-12-16 R. HEBER G Make clarification to figure A-1 special assembly instructions notes. Delete device class M references. - ro 13-05-06 C. SAFFLE REV SHEET REV G G G G SHEET 15 16 17 18 REV STATUS REV G G G G G G G
5、 G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEF
6、ENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, HIGH SPEED, DUAL, VOLTAGE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-03-21 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-96798 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E383-13 Provided by IHSNot for R
7、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consi
8、sting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 P
9、IN. The PIN is as shown in the following example: 5962 R 96798 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and
10、 V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM119 High sp
11、eed, dual, voltage comparator 02 LM119 Low dose rate radiation hardened high speed, dual, voltage comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certifi
12、cation and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line H GDFP1-F10 or CDFP2-F10 10 Flat pack I MACY1-X10 10 Can X GDF
13、P1-G10 10 Flat pack with gullwing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARIT
14、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Total supply voltage 36 V Output to negative supply voltage . 36 V Ground to negative supply voltage 25 V Ground to positive supply voltage . 18 V Differential input voltage . 5 V Input volt
15、age . 15 V 2/ Output short circuit duration (internally limited) . 10 seconds Storage temperature range . -65C to +150C Power dissipation (PD) (TA= +25C) . 500 mW 3/ Lead temperature (soldering, 10 seconds) +260C Junction temperature (TJ) . +150C Thermal resistance, junction-to-case (JC): Case outli
16、ne C . 11C/W Case outlines H and X . 13C/W Case outline I . 31C/W Thermal resistance, junction-to-case (JA): Case outline C . 94C/W still air 52C/W 500 LFPM Case outlines H and X . 215C/W still air 132C/W 500 LFPM Case outline I . 162C/W still air 88C/W 500 LFPM 1.4 Recommended operating conditions.
17、 Ambient operating temperature range (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For supply voltages less than 15 V, the absolute maximum inp
18、ut voltage is equal to the supply voltage. 3/ Maximum power dissipation must be derated at elevated temperatures and is dictated by TJ(maximum junction temperature), JA(package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any temper
19、ature is PD= (TJ(max) TA) / JAor the number given in absolute maximum ratings paragraph 1.3 herein, whichever is lower. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OH
20、IO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 RHA level R . 100 krads(Si) 4/ Maximum total dose available (dose rate = 10 mrads (Si)/s): Device type 02 RHA level R . 100 krads(Si) 5/ T
21、he manufacturer supplying device type 02 RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 Method 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free.
22、However, the manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously te
23、sted device type 01 was not tested for ELDRS, device type 02 will be added to distinguish it from the 01 device type. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specif
24、ied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard
25、 Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/quicksearch.dla.mil or
26、 from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, how
27、ever, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 4/ For device type 01, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guarantee
28、d only for the conditions as specified in MIL-STD-883, method 1019, condition A. 5/ For device type 02, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted parameters are guara
29、nteed for the conditions specified in MIL-STD-883, method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC
30、 FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affec
31、t the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein
32、for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacture
33、r under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation
34、 parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking.
35、The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA produ
36、ct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate o
37、f compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved
38、source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with e
39、ach lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I
40、. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Positive supply current +ICCVS= 15 V, VO= low, 1 01, 02 11 mA +V = 5.6 V thru 1.4 k 2,3 11.5 Negative supply current -ICCVS= 15 V, VO=
41、low, 1 01, 02 -4.2 mA +V = 5.6 V thru 1.4 k 2 -4.5 3 -6.0 Output leakage current 4/ ILEAK+VS= +15 V, -VS= -1 V, 1 01, 02 1.8 A VGND= 0 V, VOUT= 35 V 2,3 10 Input bias current IBIASVS= 15 V 1 01, 02 .475 A 2,3 .95 M,D,P,L,R 1 1 +VS= 5 V, -VS= 0 V 5/ 1 .475 2,3 .95 M,D,P,L,R 1 1 Input offset voltage V
42、OS+VS= 5 V, -VS= 0 V, 5/ 1 01, 02 -3.8 3.8 mV VCM= 1 V, RS 5 k 2,3 -6.8 6.8 M,D,P,L,R 1 -4.0 4.0 +VS= 5 V, -VS= 0 V, 5/ 1 -3.8 3.8 VCM= 3 V, RS 5 k 2,3 -6.8 6.8 M,D,P,L,R 1 -4.0 4.0 VS= 15 V, 1 -3.8 3.8 VCM= 12 V, RS 5 k 2,3 -6.8 6.8 M,D,P,L,R 1 -4.0 4.0 VS= 15 V, 1 -3.8 3.8 VCM= -12 V, RS 5 k 2,3 -
43、6.8 6.8 M,D,P,L,R 1 -4.0 4.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97
44、 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device Type Limits Unit Min Max Input offset current IOS+VS= 5 V, -VS= 0 V, 5/ 1 01, 02 -75 75 nA VCM= 1 V 2,3 -100 100 +VS= 5 V, VCM= 3 V 5/ 1 -75 7
45、5 2,3 -100 100 VS= 15 V, VCM= 12 V 1 -75 75 2,3 -100 100 VS= 15 V, VCM= -12 V 1 -75 75 2,3 -100 100 Input voltage range VINVS= 15 V 5/ 6/ 1,2,3 01, 02 -12 12 V +VS= 5 V, -VS= 0 V 6/ 1,2,3 1 3 Output saturation voltage VSATVS= 15 V, 4/ IOUT= 25 mA, VIN -5 mV 1,2,3 01, 02 1.5 V +VS= 3.5 V, -VS= -1 V,
46、1,2 0.4 VIN -6 mV, ISINK 3.2 mA 3 0.6 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96798 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 8 DSCC FORM 22
47、34 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device Type Limits Unit Min Max Voltage gain AVVS= 15 V, 7/ 4 01, 02 10.5 k VOUT= 12 V, RL= 1.4 k 5,6 10 +VS= 5 V, -VS= 0 V, 5/ 7/ 4 8 VOUT=
48、 4.5 V, RL= 1.4 k 5 5 6 5.8 Common mode rejection ratio CMRR VS= 15 V, VCM= 12 V 4 01, 02 80 dB 1/ VCM= 0 V. 2/ RHA devices supplied to this drawing have been characterized and are tested through all levels M, D, P, L, and R of irradiation. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ For device type 01, this part may be dose rate sensitive in
