DLA SMD-5962-96832 REV C-2007 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL HIGH SPEED LOW POWER VIDEO OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双重低功率录像缓冲器双硅单片电路线型微电路》.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to the descriptive designator under 1.2.4 and editorial changes throughout. - lgt 99-06-15 R. Monnin B Drawing updated to reflect current requirements. - gt 03-06-04 R. Monnin C Add a low dose rate footnote to 1.5 and Table I. Delete

2、 Neutron and Dose rate latch-up parameters as specified under 1.5. Delete Accelerated aging test, Neutron testing, and Dose rate induced latchup testing paragraphs as specified under section 4.4.4. - ro 07-05-07 R. Heber REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1

3、2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES O

4、F THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-03-29 MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96832 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E395-07 Provided by I

5、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assuranc

6、e class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is

7、 reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 96832 01 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA design

8、ator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) ind

9、icates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-1245RH Radiation hardened, dielectric isolated, dual, high speed, low power video operational amplifier with output disable 1.2.3 Device class

10、 designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-385

11、35, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finis

12、h is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH

13、IO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between V+ and V- 12 V Differential input voltage 5 V Voltage at either input terminal . V+ to V- Output current . Short circuit protected 2/ Output current (50% duty cycle) 60 mA 2/ Junction temper

14、ature (TJ) . +175C Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . 20C/W Thermal resistance, junction-to-ambient (JA) 75C/W Maximum package power dissipation (PD) at TA= +125C 0.67 W 3/ 1.4 Recommended operat

15、ing conditions. Operating supply voltage (VS) . 5 V Load resistance (RL) . 50 Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) 300 Krads (Si) 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, stand

16、ards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integr

17、ated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-

18、HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the ab

19、solute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) o

20、utput current must not exceed 30 mA for maximum reliability. 3/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: 13.3 mW/C. 4/ These parts may be dose rate sensitive in a space environment and may dem

21、onstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

22、UIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothi

23、ng in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified

24、in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and a

25、s specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall

26、 be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter li

27、mits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subg

28、roups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to

29、space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance wi

30、th MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. Fo

31、r device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an ap

32、proved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein

33、 or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits d

34、elivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M.

35、For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M.

36、 Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS C

37、OLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Non-inverting input IBSPVCM= 0 V 1 01 -15 15 A (+IN) current 2

38、,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 Channel-to-channel IBSPVCM= 0 V 1 01 -15 15 A +IN current channel 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 +IN channel common CMSIBPVCM= 1.8 V, 1 01 1.25 A/V mode sensitivity V+ = 3.2 V, V- = -6.8 V, V+ = 6.8 V, V- = -3.2 V 2 2.85 VCM= 1.2 V, V+ = 3.8 V, V- = -6.2 V

39、, V+ = 6.2 V, V- = -3.8 V 3 2.85 M,D,P,L,R,F 2/ 3/ 1 2.85 +IN resistance +RIN4/ 1 01 800 k 2,3 350 M,D,P,L,R,F 2/ 3/ 1 350 +IN current power PPSSIBPVSUPPLY= 1.8 V, 1 01 1 A/V supply sensitivity V+ = 6.8 V, V- = -5 V, V+ = 3.2 V, V- = -5 V 2 3 VSUPPLY= 1.2 V, V+ = 6.2 V, V- = -5 V, V+ = 3.8 V, V- = -

40、5 V 3 3 M,D,P,L,R,F 2/ 3/ 1 3 NPSSIBPVSUPPLY= 1.8 V, 1 1 V+ = 5 V, V- = -6.8 V, V+ = 5 V, V- = -3.2 V 2 3 VSUPPLY= 1.2 V, V+ = 5 V, V- = -6.2 V, V+ = 5 V, V- = -3.8V 3 3 M,D,P,L,R,F 2/ 3/ 1 3 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without

41、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified G

42、roup A subgroups Device type Limits Unit Min Max Inverting input IBSNVCM= 0 V 1 01 -7.5 7.5 A (-IN) current 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 Channel-to-channel IBSNVCM= 0 V 1 01 -10 10 A -IN current channel 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 -IN current common CMSIBNVCM= 1.8 V, 1 01 6 A/V mo

43、de sensitivity V+ = 3.2 V, V- = -6.8 V, V+ = 6.8 V, V- = -3.2 V 2 8 VCM= 1.2 V, V+ = 3.8 V, V- = -6.2 V, V+ = 6.2 V, V- = -3.8 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 -IN current power PPSSIBNVSUPPLY= 1.8 V, 1 01 5 A/V supply sensitivity V+ = 6.8 V, V- = -5 V, V+ = 3.2 V, V- = -5 V 2 8 VSUPPLY= 1.2 V, V+ = 6.2

44、V, V- = -5 V, V+ = 3.8 V, V- = -5 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 NPSSIBNVSUPPLY= 1.8 V, 1 5 V+ = 5 V, V- = -6.8 V, V+ = 5 V, V- = -3.2 V 2 8 VSUPPLY= 1.2 V, V+ = 5 V, V- = -6.2 V, V+ = 5 V, V- = -3.8 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction

45、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +

46、125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxOutput voltage swing VOP100VIN= -3.2 V, AV= -1, RL= 100 1 01 3 V VIN= -3 V, AV= -1, RL= 100 2,3 2.8 VIN= -3 V, AV= -1, RL= 100 , M,D,P,L,R,F 2/ 3/ 1 2.8 VON100VIN= +3.2 V, AV= -1, RL= 100 1 -3 VIN= +3 V, AV= -1, RL= 100

47、 2,3 -2.8 VIN= +3 V, AV= -1, RL= 100 , M,D,P,L,R,F 2/ 3/ 1 -2.8 Output voltage swing VOP50VIN= -2.7 V, AV= -1, RL= 50 1 01 2.5 V VIN= -2.25 V, AV= -1, 2 2.0 RL= 50 3 1.4 VIN= -2.25 V, AV= -1, RL= 50 , M,D,P,L,R,F 2/ 3/ 1 1.4 VON50VIN= +2.7 V, AV= -1, RL= 50 1 -2.5 VIN= +2.25 V, AV= -1, 2 -2.0 RL= 50

48、 3 -1.4 VIN= +2.25 V, AV= -1, RL= 50 , M,D,P,L,R,F 2/ 3/ 1 -1.4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96832 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA

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