1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update and part of five year review. tcr 06-02-13 Raymond Monnin B Update drawing to reflect current MIL-PRF-38535 requirements. Removed class M references. glg 13-11-25 Charles Saffle REV SHEET REV B SHEET 15 REV STATUS REV B B B B B
2、 B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond
3、Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 8K x 8-BIT PROM, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-10-02 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-96873 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E063-14 .Prov
4、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assuranc
5、e class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflec
6、ted in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96873 01 Q Y C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator.
7、 Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Generic number 2/ Circui
8、t function Access time 01 28F64 8K X 8-bit Radiation hardened PROM 35 ns 02 28F64 8K X 8-bit Radiation hardened PROM 45 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation
9、Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat pack 1.2.5 Lead finish. The lead
10、finish is as specified in MIL-PRF-38535 for device classes Q and V. 1.3 Absolute maximum ratings. 3/ Supply voltage range . -0.3 V dc to +7.0 V dc Voltage on any pin with respect to ground . -0.5 V dc to VDD+0.5 V dc Maximum power dissipation (PD) . 1.5 W Lead temperature (soldering, 10 seconds maxi
11、mum) +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ). +175C Storage temperature range -65C to +150C Temperature under bias . -55C to +125C _ 1/ Device is available in an unprogrammed state only. 2/ Generic numbers are listed on the Standard Microcircuit Dra
12、wing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6.1 herein). 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reli
13、ability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Supply volta
14、ge (VDD) +4.5 V dc to +5.5 V dc Ground voltage (GND) . 0.0 V dc Input high voltage (VIH). +2.4 V dc minimum to VCCInput Low voltage (VIL) . 0.0 V dc to +0.8 V dc maximum Case operating temperature range (TC) . -55C to +125C Radiation features: Total dose irradiation (Dose Rate = 50 to 300 Rads (Si)/
15、S) . 1.0 MRads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets . 128 MEV-cm2/mg Neutron irradiation 1 x 1014neutrons/cm24/ 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, method 5012)
16、 100 percent 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation
17、 or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFEN
18、SE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-50
19、94.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Stand
20、ard F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; ht
21、tp:/www.astm.org.) JEDEC INTERNATIONAL (JEDEC) JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to JEDEC Solid State Technology Association, 3103 North 10thStreet, Suite 240-S, Arlington, VA 22201-2107; http:/www.jedec.org.) (Non-Government standards and other publications ar
22、e normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,
23、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 4/ Guaranteed, but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S
24、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified
25、herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
26、in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figur
27、e 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices
28、 shall be as specified on figure 2. When required in screening (see 4.2 herein) or qualification conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed. 3.2.3.2 P
29、rogrammed devices. The requirements for supplying programmed devices are not a part of this drawing. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified, the electrical performance characteristics, and postirradiation parameter limits are as sp
30、ecified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked
31、with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the
32、 RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device
33、classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this
34、 drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered t
35、o this drawing. 3.8 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table IA. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. Provided by IHSNot for Resal
36、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. See footnotes at end of table. Test S
37、ymbol Conditions -55C TC +125C 4.5 V VDD 5.5 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output low voltage (TTL) VOL1VDD= 4.5 V, IOL= 4.8 mA 1, 2, 3 All 0.4 V M,D,P,L,R,F,G,H 1 1/ 2/ Output low voltage (CMOS) VOL2VDD= 4.5 V, IOL= 200A 1, 2, 3 All 0.05 V M,D,P,L,R,
38、F,G,H 1 1/ 2/ Output high voltage (TTL) VOH1 VDD= 4.5 V, IOH= -400A 1, 2, 3 All 2.4 V VOH2 IOH= -2.0mA 1, 2, 3 3.5 M,D,P,L,R,F,G,H 1 1/ 2/ Output high voltage (CMOS) VOH3 VDD= 4.5 V, IOH= -200A 1, 2, 3 All 4.45 V VOH4 IOH= -100A 1, 2, 3 VDD- 0.3 M,D,P,L,R,F,G,H 1 1/ 2/ Low-level input voltage (TTL)
39、VIL1, 2, 3 All 0.8 V M,D,P,L,R,F,G,H 1 1/ 2/ High-level input voltage (TTL) VIH1, 2, 3 All 2.4 V M,D,P,L,R,F,G,H 1 1/ 2/ Input leakage current ILIVIN = 0 V to VDD 1, 2, 3 All -1 1 A M,D,P,L,R,F,G,H 1 1/ 2/ 2/ Three-state output leakage current ILOVDD= 5.5 V, OE = 5.5 V, VOUT= 0 V to VDD 1, 2, 3 All
40、-10 10 A M,D,P,L,R,F,G,H 1 1/ 2/ 2/ Short-circuit output current 3/ 4/ IOS VO = VDD , VDD = 5.5 V 1, 2, 3 All 90 mA M,D,P,L,R,F,G,H 1 1/ 2/ VDD = 5.5 V, VO = 0V 1, 2, 3 All -90 mA M,D,P,L,R,F,G,H 1 1/ 2/ Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-
41、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +125C 4.5 V VDD 5.5 V unless otherwise specified Group A subgr
42、oups Device type Limits Unit Min Max Operating supply current 5/ IDDOP1TTL inputs(IOUT= 0),VIL= 0.2V VDD, PE = 5.5 V, VIH= 2.88 V f = 22.2 MHz 1, 2, 3 All 85 mA f = 28.6 MHz 01 100 IDDOP2CMOS inputs f = 1 MHz All 10 M,D,P,L,R,F,G,H 1 1/ 2/ Standby supply current IDDSBCMOS inputs(IOUT= 0),VDD= 5.5V C
43、E = VDD-0.25 V,VIL= VSS+0.25V VIH= VDD-0.25 V 1, 2, 3 All 500 A M,D,P,L,R,F,G,H 1 1/ 2/ Input capacitance 6/ CINVIN= 0 V, VDD= 5.0 V, f = 1MHz, TA= 25C, see 4.4.1c 4 All 15 pF Bidirectional input/ output capacitance 6/ 7/ CI/OVOUT= 0 V, VDD= 5.0 V, f = 1MHz, TA= 25C, see 4.4.1c 4 All 15 pF Functiona
44、l testing See 4.4.1d,VDD= 4.5 V, VIL= 0.45V,IOH= -1.0 mA IOL= 1.0 mA,VOL 1.5 V VOHf = 28.6 MHz 7, 8A, 8B All M,D,P,L,R,F,G,H 7 1/ 2/ Read cycle time 7/ tAVAVSee figure 4 8/ 9/ 7, 8A, 8B 01 35 ns 02 45 M,D,P,L,R,F,G,H 9 1/ 2/ Read access time tAVQV 9, 10, 11 01 35 ns 02 45 M,D,P,L,R,F,G,H 9 1/ 2/ CE
45、access time tELQV9, 10, 11 01 35 ns 02 45 M,D,P,L,R,F,G,H 9 1/ 2/ OE access time tGLQV 9, 10, 11 All 15 ns M,D,P,L,R,F,G,H 9 1/ 2/ See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596
46、2-96873 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - continued. 1/ When performing postirradiation electrical measurements for any RHA level TA= +25C. Limits shown are guaranteed at TA= +25C. The M,
47、D, P, L, R, F, G, and H in the test condition column are the postirradiation limits for the device types specified in the device types column. 2/ Preirradiation values for RHA marked devices shall also be the postirradiation values, unless otherwise specified. 3/ Supplied as a design limit but not g
48、uaranteed or tested. 4/ Not more than one output may be shorted at a time for maximum duration of one second. 5/ Derates at 2.5 mA/MHz. 6/ Measured only for initial qualification and after process or design changes that could affect input/output capacitance. 7/ Functional test. 8/ Test conditions assume signal transition time of 5 ns or less, timing reference levels of VDD/2, input pulse levels of 0.5V to VDD-0
