DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf

上传人:progressking105 文档编号:701213 上传时间:2019-01-01 格式:PDF 页数:12 大小:124.35KB
下载 相关 举报
DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf_第1页
第1页 / 共12页
DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf_第2页
第2页 / 共12页
DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf_第3页
第3页 / 共12页
DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf_第4页
第4页 / 共12页
DLA SMD-5962-97572 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES MONOLITHIC SILICON《四重2输入排外的硅单片电路数字双极微电路》.pdf_第5页
第5页 / 共12页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 06-11-09 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Larry E. Shaw DEFENSE SUPPLY C

2、ENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Tuan D. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Ray L. Monnin MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT AND AGENCIES OF THE DEPARTM

3、ENT OF DEFENSE DRAWING APPROVAL DATE 97-04-18 EXCLUSIVE-OR GATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97572 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E546-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

4、 MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application

5、device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97572 0

6、1 Q C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels

7、and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit funct

8、ion as follows: Device type Generic number Circuit function 01 54AS86A Quadruple 2-input exclusive-OR gates 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-c

9、ertification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline le

10、tter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for Resal

11、eNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . 7.0 V dc I

12、nput voltage (VI) 7.0 V dc Operating free-air temperature range . -55C to +125C Maximum power dissipation (PD) 209 mW Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 150C 1.4 Recommended operating conditions. 2/ 3/ Supp

13、ly voltage range (VCC) +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) +2.0 V Maximum low level input voltage (VIL) +0.8 V Maximum high level output current (IOH) . -2 mA Maximum low level output current (IOL) +20 mA Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOC

14、UMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DE

15、FENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - Li

16、st of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191

17、11-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/

18、 Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply

19、over the full specified VCCrange and case temperature range of -55C to +125C. Unused inputs must be held high or low. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUM

20、BUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM)

21、plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and ph

22、ysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Termina

23、l connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and timing waveforms. The test circuit and timing waveforms sh

24、all be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operatin

25、g temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers

26、 PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes

27、 Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for d

28、evice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device c

29、lass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that t

30、he manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-385

31、35 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawin

32、g is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made

33、 available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 8 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted withou

34、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VCCGroup A Limits 1/ Unit 4.5 V VCC 5.5

35、 V unless otherwise specified subgroups Min Max Input clamp voltage VIKII= -18mA 4.5 V 1, 2, 3 -1.2 V Short circuit output current IOS 2/ VO= 2.25 V 5.5 V 1, 2, 3 -30 -112 mA High level output voltage VOHIOH= -2 mA 4.5 V to 5.5 V 1, 2, 3 VCC- 2 V Low level output voltage VOLIOL= 20 mA, 4.5 V 1, 2, 3

36、 0.5 V Input current at maximum input voltage IIVI= 7 V 5.5 V 1, 2, 3 0.1 mA High-level input current IIHVI= 2.7 V 5.5 V 1, 2, 3 20 A Low-level input current IILVI= 0.4 V 5.5 V 1, 2, 3 -0.5 mA Supply current outputs high ICCHVI(A)= 4.5 V , VI(B)= 0 V 5.5 V 1, 2, 3 18 mA Supply current outputs low IC

37、CLVI= 4.5 V 5.5 V 1, 2, 3 38 mA Functional test See 4.4.1b 4.5 V to 5.5 V 7, 8 Propagation delay time, input A or B to output Y tPLH1CL= 50 pF, RL= 500 See Figure 4 4.5 V to 9, 10, 11 8.5 ns (other input low) tPHL15.5 V 9, 10, 11 8 Propagation delay time, input A or B to output Y tPLH24.5 V to 9, 10

38、 11 8 ns (other input high) tPHL25.5 V 9, 10, 11 9 1/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow, respectively, and the absolute value of the magnitude, not the sign, is relative to the min

39、imum and maximum limits, as applicable, listed herein. 2/ Not more than one output should be shorted at a time, and the duration of the short-circuit should not exceed one second. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

40、DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines D 2 Terminal number Terminal symbol 1 1A NC 2 1B 1A 3 1Y 1B 4 2A 1Y 5 2B NC 6 2Y 2A 7 GND NC 8 3Y 2B 9 3A 2Y 10 3B GND 11 4Y NC 12 4A 3Y 13 4

41、B 3A 14 VCC3B 15 NC 16 4Y 17 NC 18 4A 19 4B 20 VCCNC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3

42、990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 INPUTS OUTPUT A B Y L L L L H H H L H H H L FIGURE 2. Truth table. FIGURE 3. Logic diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUP

43、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 NOTES: 1. CLincludes probe and jig capacitance. 2. All input pulses have the following characteristics: PRR 1 MHz, tr= tf= 2 ns, duty cycle = 50%. 3. The outputs are measured one at a time with one transitio

44、n per measurement. FIGURE 4. Test circuit and timing waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FOR

45、M 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit,

46、 or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification

47、 and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1)

48、Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device clas

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1