DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf

上传人:rimleave225 文档编号:701228 上传时间:2019-01-01 格式:PDF 页数:11 大小:77.26KB
下载 相关 举报
DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf_第1页
第1页 / 共11页
DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf_第2页
第2页 / 共11页
DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf_第3页
第3页 / 共11页
DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf_第4页
第4页 / 共11页
DLA SMD-5962-97588 REV A-2007 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE-OR GATES MONOLITHIC SILICON《微型电路 数字型 双极 改进型肖特基晶体管晶体管逻辑电路 四路2输入正或门 单块硅》.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. - gap 07-01-10 Joseph D. Rodenbeck REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Larry E. Shaw DEFENSE SUPPLY C

2、ENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Tuan D. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Ray L. Monnin MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT AND AGENCIES OF THE DEPARTM

3、ENT OF DEFENSE DRAWING APPROVAL DATE 97-07-07 POSITIVE-OR GATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97588 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E625-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

4、MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (

5、device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97588 01

6、 Q C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels a

7、nd are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit functi

8、on as follows: Device type Generic number Circuit function 01 54F32 Quadruple 2-input positive-OR gates 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certi

9、fication to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Des

10、criptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat package 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for de

11、vice class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Sup

12、ply voltage range (VCC) . -0.5 V to 7.0 V Input voltage range (VI) . -1.2 V to 7.0 V Input current range -30 mA to 5 mA Voltage range applied to any output in the high state . -0.5 V to VCCCurrent into any output in the low state . 40 mA Storage temperature range . -65C to +150C Operating free-air t

13、emperature range (TA) -55C to 125C Maximum power dissipation (PD) 85.25 mW Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Supply voltage range (VCC) . +4.5 V dc to +5.5 V Minimum high level input voltage (VIH) +2.0 V M

14、aximum low level input voltage (VIL) . +0.8 V Maximum input clamp current (VIK) . -18 mA Maximum high level output current (IOH) -1 mA Maximum low level output current (IOL) . +20 mA Operating free-air temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, stand

15、ards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integr

16、ated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-

17、HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the

18、event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum ratin

19、g may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER

20、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality M

21、anagement (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, const

22、ruction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein

23、. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. The test circuit and s

24、witching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over t

25、he full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In additi

26、on, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marki

27、ng for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The

28、compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1

29、herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawin

30、g shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q

31、 and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices ac

32、quired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore docume

33、ntation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 8 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or network

34、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C VCCGroup A subgroup

35、s Limits 1/ Unit 4.5 V VCC 5.5 V unless otherwise specified Min Max Input clamp voltage VIKIOL= -18mA 4.5 V 1, 2, 3 -1.2 V Short circuit output current IOSVO= 0 2/ 5.5 V 1, 2, 3 -60 -150 mA High level output voltage VOHIOH= -1 mA 4.5 V 1, 2, 3 2.5 V Low level output voltage VOLIOL= 20 mA 4.5 V 1, 2,

36、 3 0.5 V Input current at maximum input voltage IIVI= 7 V 5.5 V 1, 2, 3 0.1 mA High-level input current IIHVI= 2.7 V 5.5 V 1, 2, 3 20 A Low-level input current at Data, CLK IILVI= 0.5 V 5.5 V 1, 2, 3 -0.6 mA Supply current ICCHVI= 0.5 V 3/ 5.5 V 1, 2, 3 9.2 mA ICCLVI= 0 V 5.5 V 1, 2, 3 15.5 mA Funct

37、ional test VIN= VIHMin or VILMax Verify output VO4.5 V 7, 8 L H See 4.4.1b 5.5 V 7, 8 L H Propagation delay time, low-to-high-level output, from any A or B data tPLHTA= Min to Max CL= 50 pF, RL= 500 , 5.0 V 9 2.2 5.6 ns input to Y See Note 4 4.5 V to 5.5V 10, 11 2.2 7.5 Propagation delay time, high-

38、to-low-level output from any A or B data tPHL5.0 V 9 2.2 5.3 ns input to Y 4.5 V to 5.5V 10, 11 1.7 7.5 1/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow, respectively, and the absolute value of

39、 the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 2/ Not more than one output should be shorted at a time, and the duration of the short-circuit should not exceed one second. 3/ ICCis measured with one input per gate at 4.5 V and all others gr

40、ounded. 4/ Test circuit and timing waveforms are shown in Figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC

41、 FORM 2234 APR 97 Device type 01 Case outlines C and D 2 Terminal number Terminal symbol 1 1A NC 2 1B 1A 3 1Y 1B 4 2A 1Y 5 2B NC 6 2Y 2A 7 GND NC 8 3Y 2B 9 3A 2Y 10 3B GND 11 4Y NC 12 4A 3Y 13 4B 3A 14 VCC3B 15 NC 16 4Y 17 NC 18 4A 19 4B 20 VCCNC = No connection FIGURE 1. Terminal connections. INPUT

42、S OUTPUT A B Y H X H X H H L L L FIGURE 2. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 A

43、PR 97 FIGURE 3. Logic Diagram. NOTES: 1. CLincludes probe and jig capacitance. 2. All input pulses have the following characteristics; PRR 1 MHz, tr= tf 2.5 ns, duty cycle = 50%. 3. The outputs are measured one at a time with one transition per measurement. FIGURE 4. Test circuit and switching wavef

44、orms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97588 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection.

45、 For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, samp

46、ling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M

47、, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be ma

48、intained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved a

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1